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RECTANGULAR Flash Memory 1,448

Flash Memory
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Type Width Maximum Write Cycle Time (tWC) Write Protection
M29W010B70K6E by STMicroelectronics

M29W010B70K6E

STMicroelectronics

M29W010B70K6E from STMicroelectronics is a NOR flash memory with a 128Kx8 organization, operating at 3.3V and supporting asynchronous mode. It features an industrial temperature range of -40 °C to 85 °C and offers up to 100,000 write/erase cycles. Ideal for embedded applications, it ensures reliable data storage in compact designs.

70 ns

YES

YES

100000 Write/Erase Cycles

R-PQCC-J32

e3

13.97 mm

1048576 bit

FLASH

8

1

8

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

3/3.3

2.7

Not Qualified

3.56 mm

16K

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

QUAD

YES

NOR TYPE

11.43 mm

M29W010B70N6E by STMicroelectronics

M29W010B70N6E

STMicroelectronics

M29W010B70N6E from STMicroelectronics is a NOR flash memory with a 128K x 8 organization, operating at 3.3V and featuring a max access time of 70 ns. It supports asynchronous operation and offers industrial-grade temperature range (-40 °C to 85 °C). Ideal for embedded applications, it ensures high endurance with up to 100k write/erase cycles.

70 ns

YES

YES

100000 Write/Erase Cycles

R-PDSO-G32

e3/e6

18.4 mm

1048576 bit

FLASH

8

1

8

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

TSSOP

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

NOT SPECIFIED

3/3.3

2.7

Not Qualified

1.2 mm

16K

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN/TIN BISMUTH

GULL WING

.5 mm

DUAL

NOT SPECIFIED

YES

NOR TYPE

8 mm

MX29GL320EBTI-70G by Macronix

MX29GL320EBTI-70G

Macronix

Macronix's MX29GL320EBTI-70G is a 32Mb NOR flash memory with 2MX16 organization, operating at 3V. It features an industrial temperature grade, parallel interface, and offers fast access time of 70ns. Ideal for applications requiring high-speed data storage in harsh environments.

70 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

YES

YES

R-PDSO-G48

e3

18.4 mm

33554432 bit

FLASH

16

1

8,63

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

8/16

PARALLEL

3/3.3

3

Not Qualified

YES

1.2 mm

8K,64K

.0001 Amp

Flash Memories

100 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

M29F400BB70M6E by STMicroelectronics

M29F400BB70M6E

STMicroelectronics

M29F400BB70M6E from STMicroelectronics is a 5V NOR Flash memory with a 256Kx16 organization, ideal for industrial applications. It features a max access time of 70 ns and supports up to 100k write/erase cycles. This compact SOIC package ensures reliable performance in various environments.

70 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

YES

100000 Write/Erase Cycles

R-PDSO-G44

e3/e4

28.2 mm

4194304 bit

FLASH

16

1

1,2,1,7

44

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

PLASTIC/EPOXY

SOP

SOP44,.63

RECTANGULAR

SMALL OUTLINE

PARALLEL

NOT SPECIFIED

5

5

Not Qualified

YES

2.62 mm

16K,8K,32K,64K

.0001 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN/NICKEL PALLADIUM GOLD

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

YES

NOR TYPE

13.3 mm

M29F400BT70M6E by STMicroelectronics

M29F400BT70M6E

STMicroelectronics

M29F400BT70M6E from STMicroelectronics is a 5V NOR Flash memory with a 256Kx16 organization, ideal for industrial applications. It features a max access time of 70 ns and supports up to 100k write/erase cycles. Its compact SO package ensures efficient surface mounting.

70 ns

TOP BOOT BLOCK

8

TOP

YES

YES

100000 Write/Erase Cycles

R-PDSO-G44

e3/e4

28.2 mm

4194304 bit

FLASH

16

1

1,2,1,7

44

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

PLASTIC/EPOXY

SOP

SOP44,.63

RECTANGULAR

SMALL OUTLINE

PARALLEL

NOT SPECIFIED

5

5

Not Qualified

YES

2.62 mm

16K,8K,32K,64K

.0001 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN/NICKEL PALLADIUM GOLD

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

YES

NOR TYPE

13.3 mm

AT25SF041-SSHDHR-T by Adesto Technologies

AT25SF041-SSHDHR-T

Adesto Technologies

AT25SF041-SSHDHR-T by Adesto Technologies is a 4Mbit FLASH memory IC with synchronous operation up to 85MHz. It features a small outline package, operating temperature range of -40°C to 125°C, and automotive-grade reliability. Ideal for applications requiring high-speed data transfer in harsh environments.

85 MHz

R-PDSO-G8

4194304 bit

FLASH

1

1

8

4194304 words

4M

SYNCHRONOUS

125 Cel

-40 Cel

4MX1

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

SERIAL

2.7

3.6 V

2.5 V

YES

CMOS

AUTOMOTIVE

GULL WING

DUAL

IS25LP064D-JLLE by Integrated Silicon Solution

IS25LP064D-JLLE

Integrated Silicon Solution

IS25LP064D-JLLE by Integrated Silicon Solution is an 8MX8 Flash Memory with 67108864 bit memory density. It operates at a max clock frequency of 166 MHz and has a supply voltage range of 2.7V to 3.6V. Ideal for industrial applications requiring high-speed data storage in a compact form factor.

1

166 MHz

R-PDSO-N8

e3

8 mm

67108864 bit

FLASH

8

1

8

8388608 words

8M

SYNCHRONOUS

105 Cel

-40 Cel

8MX8

PLASTIC/EPOXY

HVSON

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

3

.8 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

Tin (Sn)

NO LEAD

1.27 mm

DUAL

30

6 mm

MX25U51245GXDI54 by Macronix

MX25U51245GXDI54

Macronix

Macronix MX25U51245GXDI54 is a 64MX8 NOR Flash Memory with 166 MHz clock frequency, SPI serial bus type. Operating at -40 to 85 °C, it offers 1.65-2V supply voltage range and 536MB memory density. Ideal for industrial applications requiring high-speed data storage in compact devices.

IT CAN ALSO CONFIGURED AS 256M X 2 AND 512M X 1

4

166 MHz

20

R-PBGA-B24

8 mm

536870912 bit

FLASH

8

1

24

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

LBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

SERIAL

1.8

1.2 mm

SPI

.00018 Amp

35 mA

2 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOR TYPE

6 mm

HARDWARE/SOFTWARE

MTFC128GAPALNA-AAT by Micron Technology

MTFC128GAPALNA-AAT

Micron Technology

MTFC128GAPALNA-AAT by Micron Technology is a flash memory with 128GX8 organization and 1099511627776 bit memory density. It operates in synchronous mode, has a temperature grade of INDUSTRIAL, and is suitable for use in various applications such as storage devices and embedded systems.

R-PBGA-B100

e1

18 mm

1099511627776 bit

FLASH CARD

8

1

100

137438953472 words

128G

SYNCHRONOUS

105 Cel

-40 Cel

128GX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

14 mm

MTFC128GAPALNA-AIT by Micron Technology

MTFC128GAPALNA-AIT

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: TBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 2.7 V;

R-PBGA-B100

e1

18 mm

1099511627776 bit

FLASH CARD

8

1

100

137438953472 words

128G

SYNCHRONOUS

85 Cel

-40 Cel

128GX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

14 mm

MTFC128GAPALNS-AAT by Micron Technology

MTFC128GAPALNS-AAT

Micron Technology

MTFC128GAPALNS-AAT by Micron Technology is a 128GX8 flash memory with 1099511627776 bit density. Operating in synchronous mode, it has a thin profile and fine pitch package style. Ideal for industrial applications, it supports parallel programming with a supply voltage range of 2.7V to 3.6V.

R-PBGA-B153

e1

13 mm

1099511627776 bit

FLASH CARD

8

1

153

137438953472 words

128G

SYNCHRONOUS

105 Cel

-40 Cel

128GX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

30

11.5 mm

MTFC128GAPALNS-AIT by Micron Technology

MTFC128GAPALNS-AIT

Micron Technology

MTFC128GAPALNS-AIT by Micron Technology is a 128GX8 flash memory with 1099511627776 bit density. Operating in synchronous mode, it has a temperature range of -40 to 85 °C and supports industrial applications. With a thin profile and fine pitch package style, it features 153 terminals in a grid array shape for surface mount assembly.

R-PBGA-B153

e1

13 mm

1099511627776 bit

FLASH CARD

8

1

153

137438953472 words

128G

SYNCHRONOUS

85 Cel

-40 Cel

128GX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

30

11.5 mm

MTFC16GAPALNA-AAT by Micron Technology

MTFC16GAPALNA-AAT

Micron Technology

MTFC16GAPALNA-AAT by Micron Technology is a 16GX8 flash memory with 137.4Gb density and operates in industrial temperature range. It features synchronous operation, parallel interface, and thin profile grid array package suitable for various applications requiring high-speed data storage.

R-PBGA-B100

e1

18 mm

137438953472 bit

FLASH CARD

8

1

100

17179869184 words

16G

SYNCHRONOUS

105 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

14 mm

MTFC16GAPALNA-AIT by Micron Technology

MTFC16GAPALNA-AIT

Micron Technology

Micron Technology's MTFC16GAPALNA-AIT is a 16GX8 flash memory with 137.4Gb density, operating in industrial temperature range (-40 to 85°C). It features synchronous operation, parallel interface, and thin profile grid array package. Ideal for applications requiring high-speed data storage in harsh environments.

R-PBGA-B100

e1

18 mm

137438953472 bit

FLASH CARD

8

1

100

17179869184 words

16G

SYNCHRONOUS

85 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

14 mm

MTFC32GAPALBH-AAT by Micron Technology

MTFC32GAPALBH-AAT

Micron Technology

MTFC32GAPALBH-AAT by Micron Technology is a 32GX8 flash memory with 34359738368 words capacity. It operates in synchronous mode, has a thin profile package style, and supports industrial temperature grade. Ideal for applications requiring high memory density and parallel data transfer at temperatures ranging from -40 to 105°C.

R-PBGA-B153

e1

13 mm

274877906944 bit

FLASH CARD

8

1

153

34359738368 words

32G

SYNCHRONOUS

105 Cel

-40 Cel

32GX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

30

11.5 mm

MTFC32GAPALBH-AIT by Micron Technology

MTFC32GAPALBH-AIT

Micron Technology

Micron Technology's MTFC32GAPALBH-AIT is a 32GX8 flash memory with 274877906944 bit memory density. Operating in synchronous mode, it has a thin profile and fine pitch grid array package style. Ideal for industrial applications, it supports parallel programming with a supply voltage range of 2.7V to 3.6V.

R-PBGA-B153

e1

13 mm

274877906944 bit

FLASH CARD

8

1

153

34359738368 words

32G

SYNCHRONOUS

85 Cel

-40 Cel

32GX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

30

11.5 mm

MTFC32GAPALNA-AAT by Micron Technology

MTFC32GAPALNA-AAT

Micron Technology

MTFC32GAPALNA-AAT by Micron Technology is a 32GX8 NAND flash memory with 34359738368 words capacity. It operates synchronously at up to 200 MHz clock frequency, suitable for industrial applications. With a thin profile and grid array package style, it offers hardware write protection and a wide temperature range from -40 to 105 °C.

200 MHz

NO

NO

R-PBGA-B100

e1

18 mm

274877906944 bit

FLASH CARD

8

1

100

34359738368 words

32G

SYNCHRONOUS

105 Cel

-40 Cel

32GX8

PLASTIC/EPOXY

TBGA

BGA100,10X15,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

2.7

YES

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NO

NAND TYPE

14 mm

HARDWARE

MTFC32GAPALNA-AIT by Micron Technology

MTFC32GAPALNA-AIT

Micron Technology

Micron Technology's MTFC32GAPALNA-AIT is a 32GX8 NAND flash memory with 34359738368 words capacity. Operating at up to 200 MHz, it has a thin profile grid array package suitable for industrial applications. With hardware write protection and parallel interface, it offers reliable data storage in temperatures ranging from -40°C to 85°C.

200 MHz

NO

NO

R-PBGA-B100

e1

18 mm

274877906944 bit

FLASH CARD

8

1

100

34359738368 words

32G

SYNCHRONOUS

85 Cel

-40 Cel

32GX8

PLASTIC/EPOXY

TBGA

BGA100,10X15,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

2.7

YES

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NO

NAND TYPE

14 mm

HARDWARE

MTFC64GAPALBH-AAT by Micron Technology

MTFC64GAPALBH-AAT

Micron Technology

MTFC64GAPALBH-AAT by Micron Technology is a 64GX8 flash memory with 549755813888 bit density. Operating in synchronous mode, it has a thin profile grid array package style and operates b/w -40 to 105 °C. Ideal for industrial applications requiring high-speed data storage and retrieval.

R-PBGA-B153

13 mm

549755813888 bit

FLASH CARD

8

1

153

68719476736 words

64G

SYNCHRONOUS

105 Cel

-40 Cel

64GX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

30

11.5 mm

MTFC64GAPALBH-AIT by Micron Technology

MTFC64GAPALBH-AIT

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 153; Package Code: TFBGA; Package Shape: RECTANGULAR; Surface Mount: YES;

R-PBGA-B153

e1

13 mm

549755813888 bit

FLASH CARD

8

1

153

68719476736 words

64G

SYNCHRONOUS

85 Cel

-40 Cel

64GX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

30

11.5 mm

MTFC64GAPALNA-AAT by Micron Technology

MTFC64GAPALNA-AAT

Micron Technology

MTFC64GAPALNA-AAT by Micron Technology is a 64GX8 flash memory with 549755813888 bit density. Operating in synchronous mode, it has a temperature range of -40 to 105 °C and supports parallel programming at 2.7V. Ideal for industrial applications requiring high-speed data storage in a compact GRID ARRAY package.

R-PBGA-B100

e1

18 mm

549755813888 bit

FLASH CARD

8

1

100

68719476736 words

64G

SYNCHRONOUS

105 Cel

-40 Cel

64GX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

14 mm

MTFC64GAPALNA-AIT by Micron Technology

MTFC64GAPALNA-AIT

Micron Technology

Micron Technology's MTFC64GAPALNA-AIT is a 64GX8 NAND flash memory with 549755813888 bit density. Operating at up to 200 MHz, it features hardware write protection and industrial temperature grade. Ideal for applications requiring high-speed data storage in compact devices.

200 MHz

NO

NO

R-PBGA-B100

e1

18 mm

549755813888 bit

FLASH CARD

8

1

100

68719476736 words

64G

SYNCHRONOUS

85 Cel

-40 Cel

64GX8

PLASTIC/EPOXY

TBGA

BGA100,10X15,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

2.7

YES

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NO

NAND TYPE

14 mm

HARDWARE

MTFC64GASAONS-AITES by Micron Technology

MTFC64GASAONS-AITES

Micron Technology

MTFC64GASAONS-AITES by Micron Technology is a 64GX8 NAND flash memory with 549755813888 bit density. Operating at 52 MHz, it has a thin profile and fine pitch package suitable for industrial applications. With a voltage range of 2.7V to 3.6V, this synchronous memory offers reliable performance in temperatures from -40°C to 95°C.

52 MHz

R-PBGA-B153

13 mm

549755813888 bit

FLASH CARD

8

1

153

68719476736 words

64G

SYNCHRONOUS

95 Cel

-40 Cel

64GX8

PLASTIC/EPOXY

TFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

1.461 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NOT SPECIFIED

NAND TYPE

11.5 mm

MTFC8GAMALNA-AIT by Micron Technology

MTFC8GAMALNA-AIT

Micron Technology

MTFC8GAMALNA-AIT by Micron Technology is a 8GX8 Flash Memory with 68719476736 bit memory density. Operating in synchronous mode, it has a temperature range of -40 to 85 °C and supports parallel programming. Ideal for industrial applications requiring high-speed data storage in a compact form factor.

R-PBGA-B100

e1

18 mm

68719476736 bit

FLASH CARD

8

1

100

8589934592 words

8G

SYNCHRONOUS

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

14 mm

W25N512GWEIR by Winbond Electronics

W25N512GWEIR

Winbond Electronics

Winbond Electronics' W25N512GWEIR is a 64MX8 SLC NAND flash memory with 536870912-bit density. It operates at 1.8V, has a clock frequency of 104MHz, and supports synchronous mode. Ideal for industrial applications, it features a small outline package with very thin profile and no-lead terminal form.

1

104 MHz

R-PDSO-N8

8 mm

536870912 bit

FLASH

8

1

8

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

HVSON

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

NOT SPECIFIED

1.8

.8 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

NO LEAD

1.27 mm

DUAL

NOT SPECIFIED

SLC NAND TYPE

6 mm

IS25WP01G-RILE by Integrated Silicon Solution

IS25WP01G-RILE

Integrated Silicon Solution

IS25WP01G-RILE by Integrated Silicon Solution is a 128MX8 flash memory with 1.8V programming voltage and operates at up to 104MHz clock frequency. It is ideal for industrial applications requiring high memory density, low profile grid array package, and synchronous operation.

1

104 MHz

R-PBGA-B24

8 mm

1073741824 bit

FLASH

8

1

24

134217728 words

128M

SYNCHRONOUS

105 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

SERIAL

1.8

1.4 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

6 mm

MTFC16GJGEF-AITZ by Micron Technology

MTFC16GJGEF-AITZ

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 169; Package Code: LFBGA; Package Shape: RECTANGULAR; Package Equivalence Code: BGA169,14X14,20;

52 MHz

R-PBGA-B169

18 mm

137438953472 bit

FLASH CARD

8

1

169

17179869184 words

16G

SYNCHRONOUS

85 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

LFBGA

BGA169,14X14,20

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

1.364 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NOT SPECIFIED

NAND TYPE

14 mm

MTFC16GLWDM-4MAITZ by Micron Technology

MTFC16GLWDM-4MAITZ

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 153; Package Code: LFBGA; Package Shape: RECTANGULAR; Terminal Pitch: .5 mm;

52 MHz

R-PBGA-B153

13 mm

137438953742 bit

FLASH CARD

8

1

153

17179869184 words

16G

SYNCHRONOUS

85 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

LFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

1.364 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NOT SPECIFIED

NAND TYPE

11.5 mm

MTFC16GLWDQ-4MAITZ by Micron Technology

MTFC16GLWDQ-4MAITZ

Micron Technology

Micron Technology's MTFC16GLWDQ-4MAITZ is a 16GX8 NAND flash memory with 137.4 Gb density, operating at up to 52 MHz clock frequency. Ideal for industrial applications, it features a low profile grid array package and operates in synchronous mode.

52 MHz

R-PBGA-B100

18 mm

137438953472 bit

FLASH CARD

8

1

100

17179869184 words

16G

SYNCHRONOUS

85 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

LBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

NOT SPECIFIED

1.703 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

NAND TYPE

14 mm

MTFC32GJGEF-AITZ by Micron Technology

MTFC32GJGEF-AITZ

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 169; Package Code: LFBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 2.7 V;

52 MHz

R-PBGA-B169

18 mm

274877906944 bit

FLASH CARD

8

1

169

34359738368 words

32G

SYNCHRONOUS

85 Cel

-40 Cel

32GX8

PLASTIC/EPOXY

LFBGA

BGA169,14X14,20

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

1.364 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NOT SPECIFIED

NAND TYPE

14 mm

MTFC32GJWDQ-4MAITZ by Micron Technology

MTFC32GJWDQ-4MAITZ

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: LBGA; Package Shape: RECTANGULAR; Length: 18 mm;

52 MHz

R-PBGA-B100

18 mm

274877906944 bit

FLASH CARD

8

1

100

34359738368 words

32G

SYNCHRONOUS

85 Cel

-40 Cel

32GX8

PLASTIC/EPOXY

LBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

NOT SPECIFIED

1.703 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

NAND TYPE

14 mm

MTFC4GLGDM-AITA by Micron Technology

MTFC4GLGDM-AITA

Micron Technology

MTFC4GLGDM-AITA by Micron Technology is a 4GX8 NAND flash memory with 34359738368 bit density. Operating in synchronous mode at up to 52 MHz clock frequency, it offers 4294967296 words capacity for industrial applications. With a thin profile and fine pitch package style, this memory IC supports parallel communication at a voltage range of 2.7V to 3.6V.

52 MHz

R-PBGA-B153

13 mm

34359738368 bit

FLASH CARD

8

1

153

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

TFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

1.374 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NOT SPECIFIED

NAND TYPE

11.5 mm

MTFC4GMWDM-3MAITA by Micron Technology

MTFC4GMWDM-3MAITA

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 153; Package Code: LFBGA; Package Shape: RECTANGULAR; No. of Words Code: 4G;

52 MHz

R-PBGA-B153

13 mm

34359738368 bit

FLASH CARD

8

1

153

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

LFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

1.364 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NAND TYPE

11.5 mm

MTFC4GMWDQ-3MAITA by Micron Technology

MTFC4GMWDQ-3MAITA

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: LBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 2.7 V;

52 MHz

R-PBGA-B100

18 mm

34359738368 bit

FLASH CARD

8

1

100

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

LBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.703 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NAND TYPE

14 mm

MTFC8GLGDM-AITZ by Micron Technology

MTFC8GLGDM-AITZ

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 153; Package Code: TFBGA; Package Shape: RECTANGULAR; Surface Mount: YES;

52 MHz

R-PBGA-B153

13 mm

68719476736 bit

FLASH CARD

8

1

153

8589934592 words

8G

SYNCHRONOUS

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

TFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

1.374 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NOT SPECIFIED

NAND TYPE

11.5 mm

MTFC8GLWDM-AITA by Micron Technology

MTFC8GLWDM-AITA

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 153; Package Code: LFBGA; Package Shape: RECTANGULAR; Type: NAND TYPE;

52 MHz

R-PBGA-B153

13 mm

68719476736 bit

FLASH CARD

8

1

153

8589934592 words

8G

SYNCHRONOUS

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

LFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

1.364 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NOT SPECIFIED

NAND TYPE

11.5 mm

MTFC8GLWDM-AITZ by Micron Technology

MTFC8GLWDM-AITZ

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 153; Package Code: LFBGA; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel;

52 MHz

R-PBGA-B153

13 mm

68719476736 bit

FLASH CARD

8

1

153

8589934592 words

8G

SYNCHRONOUS

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

LFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

1.364 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NOT SPECIFIED

NAND TYPE

11.5 mm

MTFC8GLWDQ-3MAITA by Micron Technology

MTFC8GLWDQ-3MAITA

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: LBGA; Package Shape: RECTANGULAR; Package Equivalence Code: BGA100,10X17,40;

52 MHz

R-PBGA-B100

18 mm

68719476736 bit

FLASH CARD

8

1

100

8589934592 words

8G

SYNCHRONOUS

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

LBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.703 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NAND TYPE

14 mm

MTFC8GLWDQ-3MAITZ by Micron Technology

MTFC8GLWDQ-3MAITZ

Micron Technology

MTFC8GLWDQ-3MAITZ by Micron Technology is a NAND flash memory with 8GX8 organization, 52 MHz clock frequency, and 85°C max operating temp. Ideal for industrial applications requiring high-density storage in a compact form factor.

52 MHz

R-PBGA-B100

18 mm

68719476736 bit

FLASH CARD

8

1

100

8589934592 words

8G

SYNCHRONOUS

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

LBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

NOT SPECIFIED

1.703 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

NAND TYPE

14 mm

MTFC32GJWDQ-4LAITZ by Micron Technology

MTFC32GJWDQ-4LAITZ

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: LBGA; Package Shape: RECTANGULAR; Maximum Clock Frequency (fCLK): 52 MHz;

52 MHz

R-PBGA-B100

18 mm

274877906944 bit

FLASH CARD

8

1

100

34359738368 words

32G

SYNCHRONOUS

85 Cel

-40 Cel

32GX8

PLASTIC/EPOXY

LBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.4 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NAND TYPE

14 mm

MTFC4GLMDQ-AITA by Micron Technology

MTFC4GLMDQ-AITA

Micron Technology

MTFC4GLMDQ-AITA by Micron Technology is a 100-terminal flash memory with 4GX8 organization, operating at up to 52 MHz clock frequency. It features MLC NAND technology, industrial temperature grade, and parallel interface. Ideal for applications requiring high-speed data storage in compact devices.

52 MHz

R-PBGA-B100

18 mm

34359738368 bit

FLASH CARD

8

1

100

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

LBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

NOT SPECIFIED

1.703 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

MLC NAND TYPE

14 mm

MTFC8GLWDQ-3LAATA by Micron Technology

MTFC8GLWDQ-3LAATA

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: LBGA; Package Shape: RECTANGULAR; Maximum Seated Height: 1.703 mm;

52 MHz

R-PBGA-B100

18 mm

68719476736 bit

FLASH CARD

8

1

100

8589934592 words

8G

SYNCHRONOUS

105 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

LBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.703 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NAND TYPE

14 mm

MTFC8GLWDQ-3LAITA by Micron Technology

MTFC8GLWDQ-3LAITA

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: LBGA; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel;

52 MHz

R-PBGA-B100

18 mm

68719476736 bit

FLASH CARD

8

1

100

8589934592 words

8G

SYNCHRONOUS

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

LBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

1.4 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NAND TYPE

14 mm

MX25L51245GXDJ-10G by Macronix

MX25L51245GXDJ-10G

Macronix

MX25L51245GXDJ-10G by Macronix is a 128MX4 flash memory with a memory density of 536870912 bits. It operates at a max clock frequency of 104 MHz and has an industrial temperature grade. This flash memory is commonly used in applications that require high-speed data storage and retrieval.

ALSO CONFIGURED WITH 1-BIT WIDTH

2

104 MHz

R-PBGA-B24

8 mm

536870912 bit

FLASH

4

1

24

134217728 words

128M

SYNCHRONOUS

105 Cel

-40 Cel

128MX4

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

NOT SPECIFIED

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

6 mm

MTFDDAV1T0TDL-1AW12ABYY by Micron Technology

MTFDDAV1T0TDL-1AW12ABYY

Micron Technology

FLASH MODULE; Package Code: XMA; Package Shape: RECTANGULAR; Package Body Material: UNSPECIFIED; Memory Width: 8; Memory Density: 8796093022208 bit;

R-XXMA-X

8796093022208 bit

FLASH MODULE

8

1

1099511627776 words

1T

ASYNCHRONOUS

1TX8

UNSPECIFIED

XMA

RECTANGULAR

MICROELECTRONIC ASSEMBLY

SERIAL

NO

CMOS

NO LEAD

UNSPECIFIED

TLC NAND TYPE

MTFDDAV256TDL-1AW12ABYY by Micron Technology

MTFDDAV256TDL-1AW12ABYY

Micron Technology

FLASH MODULE; Package Code: XMA; Package Shape: RECTANGULAR; Parallel or Serial: SERIAL; JESD-30 Code: R-XXMA-X; Package Body Material: UNSPECIFIED;

R-XXMA-X

2199023255552 bit

FLASH MODULE

8

1

274877906944 words

256G

ASYNCHRONOUS

256GX8

UNSPECIFIED

XMA

RECTANGULAR

MICROELECTRONIC ASSEMBLY

SERIAL

NO

CMOS

NO LEAD

UNSPECIFIED

TLC NAND TYPE

MTFDDAV512TDL-1AW12ABYY by Micron Technology

MTFDDAV512TDL-1AW12ABYY

Micron Technology

FLASH MODULE; Package Code: XMA; Package Shape: RECTANGULAR; JESD-30 Code: R-XXMA-X; Surface Mount: NO; No. of Words Code: 512G;

R-XXMA-X

4398046511104 bit

FLASH MODULE

8

1

549755813888 words

512G

ASYNCHRONOUS

512GX8

UNSPECIFIED

XMA

RECTANGULAR

MICROELECTRONIC ASSEMBLY

SERIAL

NO

CMOS

NO LEAD

UNSPECIFIED

TLC NAND TYPE

MTFDHBK1T0TDP-1AT12AIYY by Micron Technology

MTFDHBK1T0TDP-1AT12AIYY

Micron Technology

Micron Technology's MTFDHBK1T0TDP-1AT12AIYY is a RECTANGULAR flash memory with 1TX8 organization and TLC NAND type. Operating in ASYNCHRONOUS mode, it offers high memory density of 8796093022208 bit. Ideal for industrial applications due to its wide temperature range from -40 to 95 °C.

R-XSMA-N

8796093022208 bit

FLASH MODULE

8

1

1099511627776 words

1T

ASYNCHRONOUS

95 Cel

-40 Cel

1TX8

UNSPECIFIED

RECTANGULAR

MICROELECTRONIC ASSEMBLY

NO

CMOS

INDUSTRIAL

NO LEAD

SINGLE

TLC NAND TYPE