Loading...

MTFC32GAPALBH-AAT

Micron Technology

MTFC32GAPALBH-AAT by Micron Technology

MTFC32GAPALBH-AAT by Micron Technology is a 32GX8 flash memory with 34359738368 words capacity. It operates in synchronous mode, has a thin profile package style, and supports industrial temperature grade. Ideal for applications requiring high memory density and parallel data transfer at temperatures ranging from -40 to 105°C.

Median Price

$31.260

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 42 parts In-Stock

1+ parts

$31.260

100+ parts

-

1k+ parts

-

10k+ parts

-

42

$31.260

-

-

-

Chip Stock

USA . 11,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

11,000

-

-

-

-

Vyrian

USA . 2,763 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,763

-

-

-

-

Digiode

USA . 744 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

744

-

-

-

-

BCID Electronics Ltd.

Israel . 113 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

113

-

-

-

-

Bristol Electronics

USA . 48 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

48

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 4,050 parts In-Stock

1+ parts

$3.830

100+ parts

-

1k+ parts

-

10k+ parts

-

4,050

$3.830

-

-

-

Corohmni

South Africa . 93 parts In-Stock

1+ parts

$5.927

100+ parts

-

1k+ parts

-

10k+ parts

-

93

$5.927

-

-

-

AZTECH Wire

Italy . 841 parts In-Stock

1+ parts

$7.035

100+ parts

-

1k+ parts

-

10k+ parts

-

841

$7.035

-

-

-

Ampacity Inc.

Singapore . 932 parts In-Stock

1+ parts

$15.000

100+ parts

-

1k+ parts

-

10k+ parts

-

932

$15.000

-

-

-

Semicontronic

India . 1,301 parts In-Stock

1+ parts

$27.000

100+ parts

$26.325

1k+ parts

$26.190

10k+ parts

-

1,301

$27.000

$26.325

$26.190

-

Continental Prestige Electronics

USA . 5,072 parts In-Stock

1+ parts

$31.260

100+ parts

-

1k+ parts

-

10k+ parts

$30.635

5,072

$31.260

-

-

$30.635

Advanced Electronics

New Zealand . 500 parts In-Stock

1+ parts

$31.885

100+ parts

$31.885

1k+ parts

$31.885

10k+ parts

-

500

$31.885

$31.885

$31.885

-

Argo Parts USA

USA . 4,475 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,475

-

-

-

-

Perfect Parts

USA . 3,288 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,288

-

-

-

-

A-Z Elektronik GmbH

Germany . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,000

-

-

-

-

RC Electronics

USA . 996 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

996

-

-

-

-

Kepictronics

USA . 502 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

502

-

-

-

-

Netroflash

USA . 500 parts In-Stock

1+ parts

-

100+ parts

$30.635

1k+ parts

$29.697

10k+ parts

$29.072

500

-

$30.635

$29.697

$29.072

Microchip USA

USA . 428 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

428

-

-

-

-

Corphita

USA . 314 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

314

-

-

-

-

Infinite Electronics LLP (Excess)

. 144 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

144

-

-

-

-

Overview

Experience top-of-the-line quality and reliability with the MTFC32GAPALBH-AAT by Micron Technology, a leading manufacturer in the flash memory industry. Designed for a wide range of applications, this innovative product offers customers unmatched value, benefits, and advantages. With its advanced technology and industrial-grade components, the MTFC32GAPALBH-AAT provides superior performance in a compact package, making it the perfect solution for any project requiring high-speed data storage and retrieval. Choose Micron Technology for all your flash memory needs and elevate your devices to the next level.

Feature Benefit Bullets

Package Body Material

PLASTIC/EPOXY - This material provides durability and protection for the flash memory, making it a reliable choice.

Surface Mount

YES - The surface mount feature allows for easy installation and integration into electronic devices.

Package Shape

RECTANGULAR - The rectangular shape of the package makes it easy to handle and fit into various devices.

Operating Mode

SYNCHRONOUS - The synchronous operation ensures fast and efficient data transfer, improving overall performance.

No. of Terminals

153 - With a large number of terminals, this flash memory can handle complex data processing tasks effectively.

Package Style

GRID ARRAY, THIN PROFILE, FINE PITCH - This package style offers a compact design and precise terminal spacing, saving space in electronic devices.

Maximum Operating Temperature

105 °C - The high maximum operating temperature makes this flash memory suitable for use in industrial environments.

Organization

32GX8 - The organization of 32GX8 allows for efficient data storage and retrieval, enhancing the device's performance.

Minimum Operating Temperature

40 °C - The low minimum operating temperature ensures reliable operation even in extreme cold conditions.

Terminal Finish

TIN SILVER COPPER - The terminal finish of TIN SILVER COPPER provides corrosion resistance and ensures long-term reliability.

Terminal Position

BOTTOM - The bottom terminal position simplifies PCB layout and allows for easier assembly of the flash memory.

Maximum Seated Height

1.2 mm - The low maximum seated height enables slim and compact device designs.

Width

11.5 mm - The width of 11.5 mm allows for easy integration into various electronic devices.

Minimum Supply Voltage (Vsup)

2.7 V - The low minimum supply voltage helps in reducing power consumption and extending battery life.

Maximum Time At Peak Reflow Temperature (s)

30 - The maximum time at peak reflow temperature ensures proper soldering and assembly of the flash memory.

Peak Reflow Temperature °C

260 - The high peak reflow temperature allows for reliable and robust soldering of the flash memory.

Length

13 mm - The length of 13 mm provides a compact form factor suitable for smaller devices.

Programming Voltage (V)

2.7 - The programming voltage of 2.7 V simplifies the programming process for the flash memory.

Temperature Grade

INDUSTRIAL - The industrial temperature grade makes this flash memory suitable for rugged and harsh environments.

Technology

CMOS - The CMOS technology offers low power consumption and high speed, enhancing overall device performance.

Parallel or Serial

PARALLEL - The parallel operation allows for faster data transfer and improved efficiency.

Terminal Form

BALL - The ball terminal form ensures reliable electrical connections and easy soldering during assembly.

No. of Words

34359738368 words - With a high number of words, this flash memory can store a large amount of data efficiently.

Memory Width

8 - The memory width of 8 bits allows for fast and efficient data processing.

Terminal Pitch

0.5 mm - The small terminal pitch of 0.5 mm enables high-density mounting of the flash memory on PCBs.

No. of Words Code

32G - The code of 32G indicates the capacity and capability of the flash memory for storing and processing data effectively.

Maximum Supply Voltage (Vsup)

3.6 V - The high maximum supply voltage ensures compatibility with a wide range of electronic devices.

Memory Density

274877906944 bit - The high memory density of 274877906944 bits allows for storing a large amount of data in a compact form factor.

Memory IC Type

FLASH CARD - The flash card memory IC type provides fast and reliable data storage and retrieval for a wide range of applications.

Technical Specifications

Flash Memory MTFC32GAPALBH-AAT attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

JESD-30 Code:

R-PBGA-B153

JESD-609 Code:

e1

Length:

13 mm

Memory Density:

274877906944 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

153

No. of Words:

34359738368 words

No. of Words Code:

32G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32GX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

2.7

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

11.5 mm

Trade Compliance

MTFC32GAPALBH-AAT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20