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MTFC64GAPALNA-AAT

Micron Technology

MTFC64GAPALNA-AAT by Micron Technology

MTFC64GAPALNA-AAT by Micron Technology is a 64GX8 flash memory with 549755813888 bit density. Operating in synchronous mode, it has a temperature range of -40 to 105 °C and supports parallel programming at 2.7V. Ideal for industrial applications requiring high-speed data storage in a compact GRID ARRAY package.

Median Price

$50.330

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 99 parts In-Stock

1+ parts

$50.330

100+ parts

-

1k+ parts

-

10k+ parts

-

99

$50.330

-

-

-

Chip Stock

USA . 15,700 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

15,700

-

-

-

-

Vyrian

USA . 8,257 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,257

-

-

-

-

Digiode

USA . 305 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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305

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 717 parts In-Stock

1+ parts

$10.000

100+ parts

-

1k+ parts

-

10k+ parts

-

717

$10.000

-

-

-

AZTECH Wire

Italy . 730 parts In-Stock

1+ parts

$15.875

100+ parts

-

1k+ parts

-

10k+ parts

-

730

$15.875

-

-

-

Continental Prestige Electronics

USA . 6,461 parts In-Stock

1+ parts

$48.842

100+ parts

-

1k+ parts

-

10k+ parts

$47.866

6,461

$48.842

-

-

$47.866

Netroflash

USA . 2,000 parts In-Stock

1+ parts

$50.330

100+ parts

-

1k+ parts

-

10k+ parts

-

2,000

$50.330

-

-

-

Corphita

USA . 1,575 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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1,575

-

-

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Argo Parts USA

USA . 542 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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542

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Microchip USA

USA . 257 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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257

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-

-

-

Overview

Experience top-notch quality and reliability with the MTFC64GAPALNA-AAT by Micron Technology. As a leading manufacturer in flash memory technology, Micron delivers exceptional products that meet the highest standards. This flash memory device offers unparalleled value and benefits to customers across various applications. Whether you're looking to enhance your storage capabilities or boost performance, the MTFC64GAPALNA-AAT provides the perfect solution with its cutting-edge features and advanced technology. Trust Micron to deliver superior products that exceed expectations every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy makes this product lightweight and durable, suitable for various applications.

Surface Mount: YES

The surface mount capability allows for easy installation and compact design, making it ideal for space-constrained environments.

Package Shape: RECTANGULAR

The rectangular shape of the package provides a standardized form factor for compatibility with a wide range of devices.

Operating Mode: SYNCHRONOUS

The synchronous operating mode allows for faster data transfer speeds and more efficient performance.

No. of Terminals: 100

With a high number of terminals, this product offers greater connectivity options and flexibility in design.

Package Style (Meter): GRID ARRAY, THIN PROFILE

The grid array thin profile package style saves space and enhances thermal performance for improved reliability.

Maximum Operating Temperature: 105 °C

The high maximum operating temperature ensures reliable operation even in extreme environmental conditions.

Organization: 64GX8

The 64GX8 organization provides a high memory capacity and efficient data storage capabilities.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature allows for use in a wide range of temperature conditions.

Terminal Finish: TIN SILVER COPPER

The tin silver copper terminal finish ensures excellent conductivity and durability for long-lasting performance.

Terminal Position: BOTTOM

The bottom terminal position allows for easy integration into circuit boards and streamlined connectivity.

Maximum Seated Height: 1.2 mm

The low maximum seated height minimizes space requirements and enhances overall system design flexibility.

Width: 14 mm

The compact width of 14mm makes this product suitable for small form factor devices and applications.

Minimum Supply Voltage (Vsup): 2.7 V

The low minimum supply voltage requirement increases energy efficiency and extends battery life.

Maximum Time At Peak Reflow Temperature (s): 30

The short maximum time at peak reflow temperature ensures safe and effective soldering processes.

Peak Reflow Temperature °C: 260

The high peak reflow temperature allows for reliable and secure soldering connections.

Length: 18 mm

The 18mm length provides a balanced form factor suitable for various system integration requirements.

Programming Voltage (V): 2.7

The 2.7V programming voltage enables efficient and effective memory programming processes.

Temperature Grade: INDUSTRIAL

The industrial temperature grade ensures reliable operation in harsh industrial environments.

Technology: CMOS

The CMOS technology offers low power consumption and high-speed data processing capabilities.

Parallel or Serial: PARALLEL

The parallel data transfer mode allows for simultaneous data transmission, improving overall system performance.

Terminal Form: BALL

The ball terminal form provides secure and stable connections for enhanced reliability.

No. of Words: 68719476736 words

With a high number of words, this product offers extensive memory storage capacity for a wide range of applications.

Memory Width: 8

The 8-bit memory width provides efficient data processing and storage capabilities for optimal performance.

Terminal Pitch: 1 mm

The 1mm terminal pitch ensures compatibility with standard assembly processes and facilitates easy installation.

No. of Words Code: 64G

The 64G words code indicates a high memory capacity suitable for demanding data storage requirements.

Maximum Supply Voltage (Vsup): 3.6 V

The high maximum supply voltage tolerance ensures compatibility with a wide range of power sources for flexible integration.

Memory Density: 549755813888 bit

The high memory density offers extensive storage capacity for large volumes of data.

Memory IC Type: FLASH CARD

The flash card memory IC type provides fast and reliable data storage and retrieval capabilities.

Technical Specifications

Flash Memory MTFC64GAPALNA-AAT attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

JESD-30 Code:

R-PBGA-B100

JESD-609 Code:

e1

Length:

18 mm

Memory Density:

549755813888 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

100

No. of Words:

68719476736 words

No. of Words Code:

64G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64GX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

2.7

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

14 mm

Trade Compliance

MTFC64GAPALNA-AAT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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