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MTFC16GAPALNA-AAT

Micron Technology

MTFC16GAPALNA-AAT by Micron Technology

MTFC16GAPALNA-AAT by Micron Technology is a 16GX8 flash memory with 137.4Gb density and operates in industrial temperature range. It features synchronous operation, parallel interface, and thin profile grid array package suitable for various applications requiring high-speed data storage.

Median Price

$23.610

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 811 parts In-Stock

1+ parts

$23.610

100+ parts

-

1k+ parts

-

10k+ parts

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811

$23.610

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-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 600 parts In-Stock

1+ parts

$21.645

100+ parts

-

1k+ parts

-

10k+ parts

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600

$21.645

-

-

-

Digiode

USA . 1,370 parts In-Stock

1+ parts

$22.430

100+ parts

-

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10k+ parts

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1,370

$22.430

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-

-

Chip Stock

USA . 22,900 parts In-Stock

1+ parts

-

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22,900

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Vyrian

USA . 7,167 parts In-Stock

1+ parts

-

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7,167

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Bristol Electronics

USA . 3,000 parts In-Stock

1+ parts

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3,000

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 698 parts In-Stock

1+ parts

$13.202

100+ parts

-

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698

$13.202

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Ampacity Inc.

Singapore . 673 parts In-Stock

1+ parts

$20.070

100+ parts

-

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673

$20.070

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Corphita

USA . 2,216 parts In-Stock

1+ parts

$21.249

100+ parts

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2,216

$21.249

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Netroflash

USA . 500 parts In-Stock

1+ parts

$21.645

100+ parts

$21.212

1k+ parts

-

10k+ parts

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500

$21.645

$21.212

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Continental Prestige Electronics

USA . 38 parts In-Stock

1+ parts

$21.645

100+ parts

-

1k+ parts

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10k+ parts

$21.212

38

$21.645

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-

$21.212

Authorized Procurement Solutions

USA . 15,000 parts In-Stock

1+ parts

-

100+ parts

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15,000

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Infinite Electronics LLP (Excess)

. 3,002 parts In-Stock

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3,002

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Argo Parts USA

USA . 2,906 parts In-Stock

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2,906

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Microchip USA

USA . 1,088 parts In-Stock

1+ parts

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1,088

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Futuretech Components

Singapore . 1,000 parts In-Stock

1+ parts

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100+ parts

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1,000

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Overview

Experience the superior quality and reliability of Micron Technology with the MTFC16GAPALNA-AAT flash memory. This cutting-edge product is perfect for a wide range of applications, from consumer electronics to industrial equipment. With its advanced technology and industrial-grade temperature rating, this flash memory offers unbeatable performance and durability. Trust Micron Technology to deliver the value and benefits you need for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and protection for the memory components inside, making this product suitable for various environments.

Surface Mount: YES

Being surface mountable makes installation and integration of this flash memory easier and more efficient.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures data transfer is synchronized and efficient, improving overall performance of the flash memory.

Maximum Operating Temperature: 105 °C

With a high maximum operating temperature, this flash memory can function reliably even in demanding industrial or external conditions.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making this flash memory energy-efficient and reliable.

Memory Density: 137438953472 bit

High memory density allows for storing a large amount of data in a compact form factor, making this flash memory suitable for devices requiring high storage capacity.

Technical Specifications

Flash Memory MTFC16GAPALNA-AAT attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

JESD-30 Code:

R-PBGA-B100

JESD-609 Code:

e1

Length:

18 mm

Memory Density:

137438953472 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

100

No. of Words:

17179869184 words

No. of Words Code:

16G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

16GX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

2.7

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

14 mm

Trade Compliance

MTFC16GAPALNA-AAT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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