Loading...

MTFC64GAPALBH-AAT

Micron Technology

MTFC64GAPALBH-AAT by Micron Technology

MTFC64GAPALBH-AAT by Micron Technology is a 64GX8 flash memory with 549755813888 bit density. Operating in synchronous mode, it has a thin profile grid array package style and operates b/w -40 to 105 °C. Ideal for industrial applications requiring high-speed data storage and retrieval.

Median Price

$49.770

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 300 parts In-Stock

1+ parts

$49.770

100+ parts

-

1k+ parts

-

10k+ parts

-

300

$49.770

-

-

-

Chip Stock

USA . 17,800 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

17,800

-

-

-

-

Vyrian

USA . 5,889 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,889

-

-

-

-

Digiode

USA . 985 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

985

-

-

-

-

NAC Semi

USA . 249 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

249

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 4,163 parts In-Stock

1+ parts

$2.490

100+ parts

-

1k+ parts

-

10k+ parts

-

4,163

$2.490

-

-

-

Corohmni

South Africa . 579 parts In-Stock

1+ parts

$3.933

100+ parts

-

1k+ parts

-

10k+ parts

-

579

$3.933

-

-

-

AZTECH Wire

Italy . 202 parts In-Stock

1+ parts

$6.327

100+ parts

-

1k+ parts

-

10k+ parts

-

202

$6.327

-

-

-

Ampacity Inc.

Singapore . 1,087 parts In-Stock

1+ parts

$20.000

100+ parts

-

1k+ parts

-

10k+ parts

-

1,087

$20.000

-

-

-

Semicontronic

India . 1,384 parts In-Stock

1+ parts

$21.000

100+ parts

$20.475

1k+ parts

$20.370

10k+ parts

-

1,384

$21.000

$20.475

$20.370

-

Continental Prestige Electronics

USA . 1,838 parts In-Stock

1+ parts

$49.295

100+ parts

-

1k+ parts

-

10k+ parts

$48.309

1,838

$49.295

-

-

$48.309

Netroflash

USA . 500 parts In-Stock

1+ parts

$49.770

100+ parts

$48.775

1k+ parts

-

10k+ parts

-

500

$49.770

$48.775

-

-

Argo Parts USA

USA . 1,937 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,937

-

-

-

-

Corphita

USA . 1,808 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,808

-

-

-

-

Microchip USA

USA . 429 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

429

-

-

-

-

Overview

Discover the cutting-edge MTFC64GAPALBH-AAT by Micron Technology, a top-tier manufacturer in the flash memory industry. This innovative product offers unparalleled reliability and performance, making it ideal for a wide range of applications. From consumer electronics to industrial automation, this flash memory device provides unmatched value, benefits, and advantages to customers looking for high-quality storage solutions. Trust Micron Technology for your memory needs and experience superior technology at its finest.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the flash memory easy to handle and long-lasting.

Surface Mount: YES

Surface mounting allows for easy integration onto circuit boards, saving space and simplifying the manufacturing process.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures data is transferred at a consistent and efficient rate, enhancing overall performance.

Maximum Operating Temperature: 105 °C

With a high maximum operating temperature, this flash memory can withstand harsh environmental conditions without compromising functionality.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature allows the flash memory to function reliably in cold temperatures, providing versatility in application.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the flash memory energy-efficient and reliable.

Technical Specifications

Flash Memory MTFC64GAPALBH-AAT attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

JESD-30 Code:

R-PBGA-B153

Length:

13 mm

Memory Density:

549755813888 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

153

No. of Words:

68719476736 words

No. of Words Code:

64G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64GX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

2.7

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

11.5 mm

Trade Compliance

MTFC64GAPALBH-AAT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 21