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MTFC128GAPALNA-AAT

Micron Technology

MTFC128GAPALNA-AAT by Micron Technology

MTFC128GAPALNA-AAT by Micron Technology is a flash memory with 128GX8 organization and 1099511627776 bit memory density. It operates in synchronous mode, has a temperature grade of INDUSTRIAL, and is suitable for use in various applications such as storage devices and embedded systems.

Median Price

$86.433

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 550 parts In-Stock

1+ parts

$86.433

100+ parts

-

1k+ parts

-

10k+ parts

-

550

$86.433

-

-

-

Chip Stock

USA . 19,700 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

19,700

-

-

-

-

Vyrian

USA . 7,931 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,931

-

-

-

-

Digiode

USA . 673 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

673

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,397 parts In-Stock

1+ parts

$2.000

100+ parts

-

1k+ parts

-

10k+ parts

-

1,397

$2.000

-

-

-

AZTECH Wire

Italy . 820 parts In-Stock

1+ parts

$15.206

100+ parts

-

1k+ parts

-

10k+ parts

-

820

$15.206

-

-

-

Continental Prestige Electronics

USA . 2,581 parts In-Stock

1+ parts

$86.433

100+ parts

-

1k+ parts

-

10k+ parts

$84.704

2,581

$86.433

-

-

$84.704

Netroflash

USA . 100 parts In-Stock

1+ parts

$86.433

100+ parts

-

1k+ parts

$82.111

10k+ parts

$80.382

100

$86.433

-

$82.111

$80.382

Corphita

USA . 2,302 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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2,302

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-

-

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Argo Parts USA

USA . 379 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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379

-

-

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Microchip USA

USA . 314 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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314

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-

Overview

Discover the cutting-edge MTFC128GAPALNA-AAT by Micron Technology, a flash memory solution that offers unparalleled quality and performance. As a leading manufacturer in the industry, Micron Technology stands at the forefront of innovation, ensuring reliable and durable products. This flash memory is highly versatile, making it ideal for various applications. But what truly sets this product apart is its incredible value for customers. With its advanced features and robust design, it delivers enhanced speed, efficiency, and storage capacity. Say goodbye to slow loading times and limited space – upgrade to the MTFC128GAPALNA-AAT and experience the benefits firsthand.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This product uses a durable plastic/epoxy material for its package body, making it resistant to damage and ensuring its longevity.

Surface Mount: YES

The surface mount feature of this product allows for easy installation and integration into various electronic devices, making it a convenient choice for manufacturers.

No. of Functions: 1

With a single function, this product focuses on providing reliable and efficient flash memory storage, ensuring high performance and consistency.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for efficient utilization of space in electronic devices, making it a space-saving option.

Operating Mode: SYNCHRONOUS

The synchronous operating mode of this product ensures precise and coordinated data transfer, resulting in optimal performance and faster read/write speeds.

No. of Terminals: 100

The substantial number of terminals on this product enhances its connectivity options, enabling seamless integration with various devices and interfaces.

Package Style (Meter): GRID ARRAY, THIN PROFILE

The grid array package style with a thin profile offers a compact and space-efficient design, making it suitable for small form factor devices.

Maximum Operating Temperature: 105 °C

With a maximum operating temperature of 105 °C, this product can withstand high temperature environments, ensuring reliable operation in demanding conditions.

Organization: 128GX8

The organization of this flash memory product as 128GX8 means it can store 128 gigabits (16 gigabytes) of data across 8 memory banks, providing ample storage capacity.

Minimum Operating Temperature: -40 °C

The minimum operating temperature of -40 °C makes this product suitable for use in extreme cold environments, ensuring its reliability in various conditions.

Terminal Finish: TIN SILVER COPPER

The terminal finish of this product with tin, silver, and copper enhances its conductivity, resulting in efficient data transfer and reliable connections.

Terminal Position: BOTTOM

With the terminal position at the bottom, this product offers easy and convenient integration into devices with corresponding connectivity configurations.

Maximum Seated Height: 1.2 mm

The maximum seated height of 1.2 mm ensures compatibility with devices having limited vertical space, making it a flexible choice for compact designs.

Width: 14 mm

With a width of 14 mm, this flash memory product can fit into compact spaces without compromising on its functionality, offering versatility in device design.

Minimum Supply Voltage (Vsup): 2.7 V

The minimum supply voltage requirement of 2.7 V allows this product to operate efficiently with low power consumption, making it energy-efficient and cost-effective.

Maximum Time At Peak Reflow Temperature (s): 30

This product can withstand the peak reflow temperature for up to 30 seconds, ensuring reliable soldering during manufacturing processes.

Peak Reflow Temperature °C: 260

The peak reflow temperature capability of 260 °C allows for efficient soldering and assembly, ensuring reliable connections and minimizing assembly errors.

Length: 18 mm

The length of 18 mm enables this flash memory product to fit into a wide range of devices without sacrificing its functionality, providing design flexibility.

Programming Voltage (V): 2.7

With a programming voltage requirement of 2.7 V, this flash memory product can be easily programmed and reprogrammed, allowing for convenient data updates.

Temperature Grade: INDUSTRIAL

Designed for industrial applications, this product is capable of operating flawlessly in rugged environments, making it a reliable choice for industrial equipment.

Technology: CMOS

The use of complementary metal-oxide-semiconductor (CMOS) technology ensures low power consumption and high-speed performance, making this product energy-efficient and fast.

Parallel or Serial: PARALLEL

This flash memory product operates in parallel mode, enabling simultaneous data transfer and maximizing data throughput, making it ideal for applications that require high-speed access to large datasets.

Terminal Form: BALL

The terminal form of this product with ball-shaped contacts simplifies the installation and integration process, ensuring a secure and reliable connection.

No. of Words: 137438953472 words

With an extensive number of words (data units) available for storage, this flash memory product offers a vast capacity, suitable for storing large amounts of data securely.

Memory Width: 8

The memory width of 8 signifies that this product can process and transfer 8 bits of data simultaneously, providing high-speed and efficient data access and manipulation.

Terminal Pitch: 1 mm

The terminal pitch of 1 mm allows for easy connectivity and integration, ensuring compatibility with standardized interfaces and connectors.

No. of Words Code: 128G

The use of a 128G words code indicates a substantial storage capacity of 128 gigabits (16 gigabytes), making this product an excellent choice for devices that require ample memory for data storage.

Maximum Supply Voltage (Vsup): 3.6 V

Operating within a maximum supply voltage of 3.6 V, this product is compatible with a wide range of power sources, ensuring versatility and convenience.

Memory Density: 1099511627776 bit

The impressive memory density of 1099511627776 bits (1 terabit) renders this product suitable for applications requiring extensive data storage, such as multimedia devices and embedded systems.

Memory IC Type: FLASH CARD

The flash card memory IC type ensures fast and reliable data access and storage, making this product ideal for portable devices, cameras, and other memory-intensive applications.

Technical Specifications

Flash Memory MTFC128GAPALNA-AAT attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

JESD-30 Code:

R-PBGA-B100

JESD-609 Code:

e1

Length:

18 mm

Memory Density:

1099511627776 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

100

No. of Words:

137438953472 words

No. of Words Code:

128G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128GX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

2.7

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

14 mm

Trade Compliance

MTFC128GAPALNA-AAT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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