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MTFC64GASAONS-AITES

Micron Technology

MTFC64GASAONS-AITES by Micron Technology

MTFC64GASAONS-AITES by Micron Technology is a 64GX8 NAND flash memory with 549755813888 bit density. Operating at 52 MHz, it has a thin profile and fine pitch package suitable for industrial applications. With a voltage range of 2.7V to 3.6V, this synchronous memory offers reliable performance in temperatures from -40°C to 95°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 10,500 parts In-Stock

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Vyrian

USA . 6,772 parts In-Stock

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Digiode

USA . 1,446 parts In-Stock

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Nova Conductors

Japan . 100 parts In-Stock

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AZTECH Wire

Italy . 105 parts In-Stock

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$12.290

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105

$12.290

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Ampacity Inc.

Singapore . 614 parts In-Stock

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$23.000

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Argo Parts USA

USA . 2,062 parts In-Stock

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Continental Prestige Electronics

USA . 1,473 parts In-Stock

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Corphita

USA . 1,327 parts In-Stock

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Infinite Electronics LLP (Excess)

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Aranea Global

USA . 1,000 parts In-Stock

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Microchip USA

USA . 441 parts In-Stock

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Overview

Experience superior performance and reliability with the MTFC64GASAONS-AITES by Micron Technology, a leading manufacturer in the flash memory industry. This cutting-edge product offers unparalleled value and benefits to customers across various applications. Whether you're looking to enhance data storage capabilities or improve system efficiency, this NAND-type memory card delivers exceptional quality and advantages that will elevate your technology experience. Trust Micron Technology to provide innovative solutions that meet your needs and exceed expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, making it suitable for portable devices.

Surface Mount: YES

Being surface mountable allows for easy and efficient integration into circuit boards, saving space and simplifying assembly.

Operating Mode: SYNCHRONOUS

The synchronous operation ensures precise and coordinated data transfers, leading to better performance and reliability.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at a nominal supply voltage of 3.3V offers energy efficiency and compatibility with standard electronic systems.

Maximum Operating Temperature: 95 °C

With a high maximum operating temperature of 95°C, this flash memory can withstand demanding industrial environments without compromising performance.

Type: NAND TYPE

NAND type flash memory offers high storage capacity, fast read/write speeds, and reliability, making it ideal for data-intensive applications.

Memory Density: 549755813888 bit

With a memory density of 549755813888 bits, this flash memory provides ample storage space for large amounts of data.

Technical Specifications

Flash Memory MTFC64GASAONS-AITES attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

52 MHz

JESD-30 Code:

R-PBGA-B153

Length:

13 mm

Memory Density:

549755813888 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

153

No. of Words:

68719476736 words

No. of Words Code:

64G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

95 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64GX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA153,14X14,20

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Seated Height:

1.461 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Type:

NAND TYPE

Width:

11.5 mm

Trade Compliance

MTFC64GASAONS-AITES Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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