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MTFC16GAPALNA-AIT

Micron Technology

MTFC16GAPALNA-AIT by Micron Technology

Micron Technology's MTFC16GAPALNA-AIT is a 16GX8 flash memory with 137.4Gb density, operating in industrial temperature range (-40 to 85°C). It features synchronous operation, parallel interface, and thin profile grid array package. Ideal for applications requiring high-speed data storage in harsh environments.

Median Price

$37.421

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 900 parts In-Stock

1+ parts

$37.421

100+ parts

$30.602

1k+ parts

-

10k+ parts

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900

$37.421

$30.602

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-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 27 parts In-Stock

1+ parts

$19.410

100+ parts

-

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-

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27

$19.410

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Digiode

USA . 84 parts In-Stock

1+ parts

$35.550

100+ parts

-

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84

$35.550

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Vyrian

USA . 7,976 parts In-Stock

1+ parts

-

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7,976

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Chip Stock

USA . 4,379 parts In-Stock

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-

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4,379

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Cyclops Electronics Ltd

UK . 245 parts In-Stock

1+ parts

-

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245

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Bristol Electronics

USA . 20 parts In-Stock

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20

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 4,903 parts In-Stock

1+ parts

$2.630

100+ parts

-

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4,903

$2.630

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Corohmni

South Africa . 1,004 parts In-Stock

1+ parts

$4.979

100+ parts

-

1k+ parts

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1,004

$4.979

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AZTECH Wire

Italy . 568 parts In-Stock

1+ parts

$7.223

100+ parts

-

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568

$7.223

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Netroflash

USA . 1,000 parts In-Stock

1+ parts

$19.410

100+ parts

-

1k+ parts

$18.439

10k+ parts

$18.051

1,000

$19.410

-

$18.439

$18.051

Ampacity Inc.

Singapore . 659 parts In-Stock

1+ parts

$31.810

100+ parts

-

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659

$31.810

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Corphita

USA . 980 parts In-Stock

1+ parts

$33.679

100+ parts

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980

$33.679

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Argo Parts USA

USA . 4,841 parts In-Stock

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4,841

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Microchip USA

USA . 2,641 parts In-Stock

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2,641

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Continental Prestige Electronics

USA . 1,225 parts In-Stock

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1,225

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Perfect Parts

USA . 1,098 parts In-Stock

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1,098

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Speed Components Ltd (Excess)

Israel . 784 parts In-Stock

1+ parts

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784

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A-Z Elektronik GmbH

Germany . 500 parts In-Stock

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500

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Overview

Unleash the power of Micron Technology with the MTFC16GAPALNA-AIT flash memory card. Designed with precision and expertise, this high-quality product offers unparalleled performance and reliability. Perfect for a wide range of applications, this flash memory card provides fast data access and storage, making it ideal for professionals and tech enthusiasts alike. Experience the ultimate in speed and efficiency with Micron Technology, where innovation meets excellence. Elevate your devices with the MTFC16GAPALNA-AIT and discover a whole new world of possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protection to the flash memory, ensuring longevity and reliability.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for faster and more efficient data transfer, enhancing performance of the flash memory.

Minimum Operating Temperature: -40 °C

Wide operating temperature range allows the flash memory to function effectively in various environmental conditions.

Memory Width: 8

Memory width of 8 ensures compatibility with a wide range of systems and applications.

Technology: CMOS

CMOS technology provides low power consumption and high speed performance, making the flash memory efficient and reliable.

Technical Specifications

Flash Memory MTFC16GAPALNA-AIT attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

JESD-30 Code:

R-PBGA-B100

JESD-609 Code:

e1

Length:

18 mm

Memory Density:

137438953472 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

100

No. of Words:

17179869184 words

No. of Words Code:

16G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

16GX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

2.7

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

14 mm

Trade Compliance

MTFC16GAPALNA-AIT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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