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MTFC64GAPALNA-AIT

Micron Technology

MTFC64GAPALNA-AIT by Micron Technology

Micron Technology's MTFC64GAPALNA-AIT is a 64GX8 NAND flash memory with 549755813888 bit density. Operating at up to 200 MHz, it features hardware write protection and industrial temperature grade. Ideal for applications requiring high-speed data storage in compact devices.

Median Price

$44.395

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$44.395

100+ parts

-

1k+ parts

-

10k+ parts

-

50

$44.395

-

-

-

Chip Stock

USA . 17,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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17,500

-

-

-

-

Vyrian

USA . 8,474 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,474

-

-

-

-

Digiode

USA . 393 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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393

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 549 parts In-Stock

1+ parts

$13.802

100+ parts

-

1k+ parts

-

10k+ parts

-

549

$13.802

-

-

-

Ampacity Inc.

Singapore . 559 parts In-Stock

1+ parts

$19.000

100+ parts

-

1k+ parts

-

10k+ parts

-

559

$19.000

-

-

-

Continental Prestige Electronics

USA . 1,015 parts In-Stock

1+ parts

$44.395

100+ parts

-

1k+ parts

-

10k+ parts

$43.507

1,015

$44.395

-

-

$43.507

Argo Parts USA

USA . 4,840 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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4,840

-

-

-

-

Corphita

USA . 1,360 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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1,360

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-

-

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Netroflash

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

$43.507

1k+ parts

$42.175

10k+ parts

$41.287

1,000

-

$43.507

$42.175

$41.287

Microchip USA

USA . 239 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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239

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-

Overview

Elevate your devices with the cutting-edge MTFC64GAPALNA-AIT Flash Memory by Micron Technology. Crafted with precision and reliability in mind, this NAND type memory offers unparalleled performance and durability for a wide range of applications. From smartphones to industrial machinery, this flash memory ensures seamless operation and data protection. Experience the value of high-quality technology with Micron Technology's MTFC64GAPALNA-AIT, where innovation meets excellence.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the flash memory, making it a reliable choice for storing important data.

Surface Mount: YES

Surface mount capability allows for easy integration onto circuit boards and saves space in electronic devices.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures efficient data transfer and communication with other components in the system.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this flash memory can be used in a wide range of environments without overheating.

Memory Density: 549755813888 bit

High memory density allows for storing a large amount of data in a compact form factor, making the flash memory suitable for demanding applications.

Technical Specifications

Flash Memory MTFC64GAPALNA-AIT attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

200 MHz

Command User Interface:

NO

Data Polling:

NO

JESD-30 Code:

R-PBGA-B100

JESD-609 Code:

e1

Length:

18 mm

Memory Density:

549755813888 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

100

No. of Words:

68719476736 words

No. of Words Code:

64G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64GX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA100,10X15,40

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

2.7

Ready or Busy:

YES

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Toggle Bit:

NO

Type:

NAND TYPE

Width:

14 mm

Write Protection:

HARDWARE

Trade Compliance

MTFC64GAPALNA-AIT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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