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MTFC4GLGDM-AITA

Micron Technology

MTFC4GLGDM-AITA by Micron Technology

MTFC4GLGDM-AITA by Micron Technology is a 4GX8 NAND flash memory with 34359738368 bit density. Operating in synchronous mode at up to 52 MHz clock frequency, it offers 4294967296 words capacity for industrial applications. With a thin profile and fine pitch package style, this memory IC supports parallel communication at a voltage range of 2.7V to 3.6V.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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Chip Stock

USA . 24,800 parts In-Stock

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Vyrian

USA . 4,743 parts In-Stock

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HZD GmbH

Germany . 3,223 parts In-Stock

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Digiode

USA . 2,018 parts In-Stock

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Dark Horse Electronics

USA . 25 parts In-Stock

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25

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Nova Conductors

Japan . 10 parts In-Stock

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10

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Distributors (Availability)

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AZTECH Wire

Italy . 589 parts In-Stock

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$11.749

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589

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Ampacity Inc.

Singapore . 1,098 parts In-Stock

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$22.000

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Infinite Electronics LLP (Excess)

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Microchip USA

USA . 5,793 parts In-Stock

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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1,000

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Aranea Global

USA . 500 parts In-Stock

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500

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Corphita

USA . 453 parts In-Stock

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453

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Overview

Unlock the power of cutting-edge technology with the MTFC4GLGDM-AITA by Micron Technology. As a leader in the industry, Micron Technology guarantees top-notch quality and reliability. This flash memory device is perfect for a wide range of applications, offering unparalleled performance and efficiency. Experience seamless operation and faster data transfer speeds, all while enjoying the durability and longevity that Micron products are known for. Upgrade your technology game with the MTFC4GLGDM-AITA and stay ahead of the curve.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the flash memory, ensuring a longer lifespan.

Surface Mount: YES

Surface mount technology makes installation easier and allows for a more compact design.

Package Shape: RECTANGULAR

Rectangular shape is commonly used for flash memory packages, allowing for easy integration into various devices.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for faster data transfer rates and more efficient performance.

No. of Terminals: 153

A higher number of terminals allows for more data transfer channels, increasing the overall speed and efficiency of the flash memory.

Package Style: GRID ARRAY, THIN PROFILE, FINE PITCH

This package style offers a compact design with a high terminal density, making it suitable for space-constrained applications.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this flash memory can withstand harsh environments and extended use.

Organization: 4GX8

The organized layout of 4GX8 allows for efficient data storage and retrieval, optimizing the performance of the flash memory.

Minimum Operating Temperature: -40 °C

A low minimum operating temperature ensures that the flash memory can function in a wide range of environmental conditions.

Terminal Position: BOTTOM

Bottom terminal position allows for easy installation and access in devices, saving space and improving connectivity.

Maximum Clock Frequency (fCLK): 52 MHz

High clock frequency enables fast data processing and transfer speeds, improving overall performance.

Width: 11.5 mm

Compact width makes this flash memory suitable for use in small electronic devices and applications.

Minimum Supply Voltage (Vsup): 2.7 V

Low minimum supply voltage reduces power consumption while maintaining efficient operation.

Type: NAND TYPE

NAND type flash memory offers high storage capacity and fast read/write speeds, making it ideal for data-intensive applications.

Length: 13 mm

Medium length design provides a balance between compactness and functionality, suitable for various device sizes.

Temperature Grade: INDUSTRIAL

Industrial temperature grade ensures reliable operation in harsh industrial environments with extreme temperature variations.

Technology: CMOS

CMOS technology offers low power consumption and high speed, making this flash memory energy-efficient and fast.

Parallel or Serial: PARALLEL

Parallel operation allows for simultaneous data transfer, improving overall performance and speed.

Terminal Form: BALL

Ball terminal form provides secure connections and easy soldering, ensuring a reliable and stable connection for the flash memory.

No. of Words: 4294967296 words

High number of words means larger storage capacity, suitable for storing a vast amount of data efficiently.

Memory Width: 8

8-bit memory width allows for efficient data processing and storage, improving overall performance and speed.

Terminal Pitch: 0.5 mm

Small terminal pitch allows for high terminal density, enabling more data transfer channels and faster speeds.

No. of Words Code: 4G

4G words code indicates a large storage capacity, suitable for data-intensive applications and large-scale data storage.

Maximum Supply Voltage (Vsup): 3.6 V

High maximum supply voltage ensures stable operation and performance under varying power conditions.

Memory Density: 34359738368 bit

High memory density offers a large storage capacity in a compact form factor, ideal for applications requiring extensive data storage.

Memory IC Type: FLASH CARD

Flash card memory IC type provides versatile storage options for various devices, offering high performance and reliability.

Technical Specifications

Flash Memory MTFC4GLGDM-AITA attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

52 MHz

JESD-30 Code:

R-PBGA-B153

Length:

13 mm

Memory Density:

34359738368 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

153

No. of Words:

4294967296 words

No. of Words Code:

4G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

4GX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA153,14X14,20

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Seated Height:

1.374 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Type:

NAND TYPE

Width:

11.5 mm

Trade Compliance

MTFC4GLGDM-AITA Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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