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MTFC32GAPALBH-AIT

Micron Technology

MTFC32GAPALBH-AIT by Micron Technology

Micron Technology's MTFC32GAPALBH-AIT is a 32GX8 flash memory with 274877906944 bit memory density. Operating in synchronous mode, it has a thin profile and fine pitch grid array package style. Ideal for industrial applications, it supports parallel programming with a supply voltage range of 2.7V to 3.6V.

Median Price

$38.900

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 32 parts In-Stock

1+ parts

$38.900

100+ parts

-

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32

$38.900

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Bristol Electronics

USA . 22,974 parts In-Stock

1+ parts

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22,974

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Vyrian

USA . 8,239 parts In-Stock

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8,239

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Chip Stock

USA . 5,784 parts In-Stock

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5,784

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Sensible Micro Corp

USA . 1,205 parts In-Stock

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1,205

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Digiode

USA . 583 parts In-Stock

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583

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ComSIT Distribution GmbH

Germany . 64 parts In-Stock

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64

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 3,491 parts In-Stock

1+ parts

$4.040

100+ parts

-

1k+ parts

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3,491

$4.040

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Corohmni

South Africa . 61 parts In-Stock

1+ parts

$5.373

100+ parts

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61

$5.373

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AZTECH Wire

Italy . 360 parts In-Stock

1+ parts

$11.068

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360

$11.068

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Semicontronic

India . 1,045 parts In-Stock

1+ parts

$21.000

100+ parts

$20.475

1k+ parts

$20.370

10k+ parts

-

1,045

$21.000

$20.475

$20.370

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Ampacity Inc.

Singapore . 820 parts In-Stock

1+ parts

$24.000

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820

$24.000

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iBuyXS LLC

. 22,974 parts In-Stock

1+ parts

$27.990

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22,974

$27.990

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Continental Prestige Electronics

USA . 942 parts In-Stock

1+ parts

$38.900

100+ parts

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$38.122

942

$38.900

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$38.122

BidChips

USA . 22,974 parts In-Stock

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22,974

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A-Z Elektronik GmbH

Germany . 6,087 parts In-Stock

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6,087

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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5,000

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Argo Parts USA

USA . 3,774 parts In-Stock

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3,774

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ChipstoGo Electronic ltd

UK . 3,451 parts In-Stock

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3,451

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Perfect Parts

USA . 3,405 parts In-Stock

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3,405

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Corphita

USA . 1,028 parts In-Stock

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1,028

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Microchip USA

USA . 285 parts In-Stock

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285

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Kepictronics

USA . 44 parts In-Stock

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Overview

Discover the cutting-edge MTFC32GAPALBH-AIT by Micron Technology, a high-quality flash memory solution perfect for a wide range of applications. With Micron's reputation for excellence in technology and innovation, this product offers unparalleled value and benefits to customers. Whether you're looking to enhance the performance of your devices or improve storage capacity, this flash memory is the ideal choice. Experience seamless operation and reliability with Micron Technology's MTFC32GAPALBH-AIT.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic and epoxy materials provide durability and protection for the flash memory, making it suitable for rugged environments.

Surface Mount: YES

Surface mount capability allows for easy and secure placement on printed circuit boards, saving space and improving reliability.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures efficient and synchronized data transfer, enhancing performance and reliability.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this flash memory can function reliably even in elevated temperature environments.

Minimum Operating Temperature: -40 °C

The flash memory can operate effectively in extreme cold conditions, making it suitable for a wide range of applications.

Memory Density: 274877906944 bit

High memory density allows for storing a large amount of data in a compact form factor, making this flash memory ideal for applications requiring high storage capacity.

Technical Specifications

Flash Memory MTFC32GAPALBH-AIT attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

JESD-30 Code:

R-PBGA-B153

JESD-609 Code:

e1

Length:

13 mm

Memory Density:

274877906944 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

153

No. of Words:

34359738368 words

No. of Words Code:

32G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32GX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

2.7

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

11.5 mm

Trade Compliance

MTFC32GAPALBH-AIT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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