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IS25WP01G-RILE

Integrated Silicon Solution

IS25WP01G-RILE by Integrated Silicon Solution

IS25WP01G-RILE by Integrated Silicon Solution is a 128MX8 flash memory with 1.8V programming voltage and operates at up to 104MHz clock frequency. It is ideal for industrial applications requiring high memory density, low profile grid array package, and synchronous operation.

Median Price

$16.300

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 760 parts In-Stock

1+ parts

$16.300

100+ parts

$13.930

1k+ parts

-

10k+ parts

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760

$16.300

$13.930

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DigiKey

USA . 269 parts In-Stock

1+ parts

$16.300

100+ parts

$13.929

1k+ parts

$13.148

10k+ parts

-

269

$16.300

$13.929

$13.148

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 65 parts In-Stock

1+ parts

$12.002

100+ parts

-

1k+ parts

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65

$12.002

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Vyrian

USA . 2,060 parts In-Stock

1+ parts

-

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2,060

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 780 parts In-Stock

1+ parts

$6.668

100+ parts

-

1k+ parts

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10k+ parts

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780

$6.668

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Continental Prestige Electronics

USA . 3,796 parts In-Stock

1+ parts

$12.002

100+ parts

-

1k+ parts

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10k+ parts

$11.762

3,796

$12.002

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$11.762

Netroflash

USA . 100 parts In-Stock

1+ parts

$12.002

100+ parts

-

1k+ parts

$11.402

10k+ parts

$11.162

100

$12.002

-

$11.402

$11.162

Argo Parts USA

USA . 1,857 parts In-Stock

1+ parts

-

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1,857

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Overview

Elevate your electronics with the IS25WP01G-RILE by Integrated Silicon Solution, a cutting-edge flash memory solution that delivers unparalleled quality and reliability. Designed by industry-leading experts, this memory module is the perfect choice for applications requiring fast and efficient data storage. With a sleek rectangular package shape and low profile design, this flash memory offers seamless integration into any project. Experience the benefits of superior performance, high-speed operation, and industrial-grade temperature tolerance. Upgrade your devices today with the IS25WP01G-RILE and unlock endless possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body material provides durability and ensures the product can withstand various environmental conditions.

Surface Mount: YES

The surface mount capability makes it easy to integrate the flash memory into circuit boards, saving space and simplifying the manufacturing process.

Operating Mode: SYNCHRONOUS

The synchronous operating mode allows for faster data transfer speeds and more efficient performance in high-demand applications.

Nominal Supply Voltage / Vsup (V): 1.8

The low nominal supply voltage of 1.8V helps to reduce power consumption and extend battery life in portable devices.

Maximum Operating Temperature: 105 °C

The high maximum operating temperature of 105°C ensures reliability and stability even in demanding industrial environments.

Organization: 128MX8

The organization of 128MX8 provides a high memory density and efficient data storage capacity for various applications.

Maximum Clock Frequency (fCLK): 104 MHz

The high maximum clock frequency of 104 MHz enables quick data access and processing, suitable for high-performance computing tasks.

Technology: CMOS

The CMOS technology used in the flash memory offers low power consumption, fast operation, and high reliability, making it a preferred choice for many applications.

No. of Words: 134217728 words

The large number of words supported allows for extensive data storage and retrieval, making the flash memory suitable for data-intensive applications.

Memory Width: 8

The memory width of 8 bits enables efficient data processing and storage, supporting a wide range of data types and formats.

Maximum Supply Voltage (Vsup): 1.95 V

The maximum supply voltage of 1.95V provides a safety margin and ensures the flash memory can handle voltage variations without compromising performance.

Memory Density: 1073741824 bit

The high memory density of 1073741824 bits offers ample storage capacity for large amounts of data, making the flash memory suitable for data-intensive applications.

Memory IC Type: FLASH

The flash memory IC type provides non-volatile storage capabilities, allowing data to be retained even when power is turned off, making it ideal for storing critical information.

Technical Specifications

Flash Memory IS25WP01G-RILE attributes and parameters. Explore more Flash Memory devices from Integrated Silicon Solution

Specs

Alternate Memory Width:

1

Maximum Clock Frequency (fCLK):

104 MHz

JESD-30 Code:

R-PBGA-B24

Length:

8 mm

Memory Density:

1073741824 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

24

No. of Words:

134217728 words

No. of Words Code:

128M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE

Parallel or Serial:

SERIAL

Programming Voltage (V):

1.8

Maximum Seated Height:

1.4 mm

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Width:

6 mm

Trade Compliance

IS25WP01G-RILE Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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