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RECTANGULAR Flash Memory 1,448

Flash Memory
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Type Width Maximum Write Cycle Time (tWC) Write Protection
MT28F004B5VG-8B by Micron Technology

MT28F004B5VG-8B

Micron Technology

MT28F004B5VG-8B by Micron Technology is a NOR flash memory with 512KX8 organization, operating at 5V. It features a small outline package, GULL WING terminals, and offers 524288 words of memory. Ideal for commercial applications requiring fast access times and low standby current.

80 ns

100000 ERASE CYCLES; BOTTOM BOOT BLOCK

BOTTOM

YES

NO

R-PDSO-G40

e0

18.4 mm

4194304 bit

FLASH

8

1

1,2,1,3

40

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX8

PLASTIC/EPOXY

TSOP1

TSSOP40,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

5

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

55 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

10 mm

PC28F00AM29EWHA by Micron Technology

PC28F00AM29EWHA

Micron Technology

Micron Technology's PC28F00AM29EWHA is a NOR flash memory with 64MX16 organization, operating at 3V. It features a 1K sector size, 128K word sector size, and offers an industrial temperature grade. Ideal for applications requiring fast access times and high memory density in industrial settings.

100 ns

8

YES

YES

YES

R-PBGA-B64

e1

13 mm

1073741824 bit

FLASH

16

1

1K

64

67108864 words

64M

ASYNCHRONOUS

85 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

LBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

16/32

PARALLEL

260

3/3.3

3

Not Qualified

YES

1.4 mm

128K

.00024 Amp

Flash Memories

31 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

YES

NOR TYPE

11 mm

MT28F008B5VG-8BET by Micron Technology

MT28F008B5VG-8BET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 40; Package Code: TSOP1; Package Shape: RECTANGULAR; Additional Features: 100,000 ERASE CYCLES; BOTTOM BOOT BLOCK;

80 ns

100,000 ERASE CYCLES; BOTTOM BOOT BLOCK

BOTTOM

YES

NO

R-PDSO-G40

e0

18.4 mm

8388608 bit

FLASH

8

1

1,2,1,7

40

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX8

PLASTIC/EPOXY

TSOP1

TSSOP40,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

5

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

55 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

10 mm

MT28F008B5VG-8B by Micron Technology

MT28F008B5VG-8B

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 40; Package Code: TSOP1; Package Shape: RECTANGULAR; Maximum Standby Current: .000005 Amp;

80 ns

100,000 ERASE CYCLES; BOTTOM BOOT BLOCK

BOTTOM

YES

NO

R-PDSO-G40

e0

18.4 mm

8388608 bit

FLASH

8

1

1,2,1,7

40

1048576 words

1M

ASYNCHRONOUS

70 Cel

0 Cel

1MX8

PLASTIC/EPOXY

TSOP1

TSSOP40,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

5

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

55 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

10 mm

MT28F008B5VG-8TET by Micron Technology

MT28F008B5VG-8TET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 40; Package Code: TSOP1; Package Shape: RECTANGULAR; No. of Words Code: 1M;

80 ns

100,000 ERASE CYCLES; TOP BOOT BLOCK

TOP

YES

NO

R-PDSO-G40

e0

18.4 mm

8388608 bit

FLASH

8

1

1,2,1,7

40

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX8

PLASTIC/EPOXY

TSOP1

TSSOP40,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

5

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

55 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

10 mm

MT28F008B5VG-8T by Micron Technology

MT28F008B5VG-8T

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 40; Package Code: TSOP1; Package Shape: RECTANGULAR; Terminal Finish: TIN LEAD;

80 ns

100,000 ERASE CYCLES; TOP BOOT BLOCK

TOP

YES

NO

R-PDSO-G40

e0

18.4 mm

8388608 bit

FLASH

8

1

1,2,1,7

40

1048576 words

1M

ASYNCHRONOUS

70 Cel

0 Cel

1MX8

PLASTIC/EPOXY

TSOP1

TSSOP40,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

5

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

55 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

10 mm

MT28F800B5SG-8BET by Micron Technology

MT28F800B5SG-8BET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 44; Package Code: SOP; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel;

80 ns

100,000 ERASE CYCLES; BOTTOM BOOT BLOCK

8

BOTTOM

YES

NO

R-PDSO-G44

e0

28.195 mm

8388608 bit

FLASH

16

1

1,2,1,7

44

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

3-STATE

PLASTIC/EPOXY

SOP

SOP44,.63

RECTANGULAR

SMALL OUTLINE

PARALLEL

5

5

Not Qualified

2.7 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

55 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

NO

NOR TYPE

12.6 mm

MT28F800B5SG-8B by Micron Technology

MT28F800B5SG-8B

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 44; Package Code: SOP; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 4.5 V;

80 ns

100,000 ERASE CYCLES; BOTTOM BOOT BLOCK

8

BOTTOM

YES

NO

R-PDSO-G44

e0

28.195 mm

8388608 bit

FLASH

16

1

1,2,1,7

44

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX16

PLASTIC/EPOXY

SOP

SOP44,.63

RECTANGULAR

SMALL OUTLINE

PARALLEL

5

5

Not Qualified

2.7 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

55 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

NO

NOR TYPE

12.6 mm

MT28F800B5SG-8TET by Micron Technology

MT28F800B5SG-8TET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 44; Package Code: SOP; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 4.5 V;

80 ns

100,000 ERASE CYCLES; TOP BOOT BLOCK

8

TOP

YES

NO

R-PDSO-G44

e0

28.195 mm

8388608 bit

FLASH

16

1

1,2,1,7

44

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

3-STATE

PLASTIC/EPOXY

SOP

SOP44,.63

RECTANGULAR

SMALL OUTLINE

PARALLEL

5

5

Not Qualified

2.7 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

55 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

NO

NOR TYPE

12.6 mm

MT28F800B5WG-8BET by Micron Technology

MT28F800B5WG-8BET

Micron Technology

MT28F800B5WG-8BET by Micron Technology is a NOR type Flash Memory with 512Kx16 organization, operating at 5V. It features 80ns max access time, 524288 words capacity, and industrial temperature grade. Ideal for applications requiring fast data access and reliable non-volatile memory storage in harsh environments.

80 ns

100,000 ERASE CYCLES; BOTTOM BOOT BLOCK

8

BOTTOM

YES

NO

R-PDSO-G48

e0

18.4 mm

8388608 bit

FLASH

16

1

1,2,1,7

48

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

5

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

55 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

12 mm

MT28F800B5WG-8B by Micron Technology

MT28F800B5WG-8B

Micron Technology

MT28F800B5WG-8B by Micron Technology is a NOR flash memory with 512KX16 organization, operating at 5V. It features 524288 words, 8388608 bit memory density, and 0.000005 Amp standby current. Ideal for commercial applications requiring fast access time and parallel interface.

80 ns

100,000 ERASE CYCLES; BOTTOM BOOT BLOCK

8

BOTTOM

YES

NO

R-PDSO-G48

e0

18.4 mm

8388608 bit

FLASH

16

1

1,2,1,7

48

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

5

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

55 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

12 mm

MT28F800B5WG-8TET by Micron Technology

MT28F800B5WG-8TET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Terminal Form: GULL WING;

80 ns

100,000 ERASE CYCLES; TOP BOOT BLOCK

8

TOP

YES

NO

R-PDSO-G48

e0

18.4 mm

8388608 bit

FLASH

16

1

1,2,1,7

48

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

5

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

55 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

12 mm

MT28F800B5WG-8T by Micron Technology

MT28F800B5WG-8T

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Maximum Standby Current: .000005 Amp;

80 ns

100,000 ERASE CYCLES; TOP BOOT BLOCK

8

TOP

YES

NO

R-PDSO-G48

e0

18.4 mm

8388608 bit

FLASH

16

1

1,2,1,7

48

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

5

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

55 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

12 mm

AT29LV010A-15JC by Atmel

AT29LV010A-15JC

Atmel

Atmel's AT29LV010A-15JC is a 128Kx8 NOR flash memory chip with 3.3V supply, operating at temperatures from 0 to 70°C. It features asynchronous operation, 150ns access time, and supports data polling. Ideal for applications requiring fast read/write speeds in commercial-grade devices.

150 ns

NO

YES

R-PQCC-J32

e0

13.97 mm

1048576 bit

FLASH

8

2

1

1K

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

225

3.3

3

Not Qualified

3.56 mm

128

.00004 Amp

Flash Memories

15 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

YES

NOR TYPE

11.43 mm

20 ms

AT29LV020-20JC by Atmel

AT29LV020-20JC

Atmel

AT29LV020-20JC by Atmel is a 256Kx8 NOR flash memory with a 3.3V supply voltage and 200ns max access time. It is commonly used in applications that require high-speed data storage and retrieval, such as embedded systems and consumer electronics.

200 ns

BOTTOM/TOP

NO

YES

R-PQCC-J32

e0

13.97 mm

2097152 bit

FLASH

8

2

1

1K

32

262144 words

256K

ASYNCHRONOUS

70 Cel

0 Cel

256KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

225

3.3

3

Not Qualified

3.556 mm

256

.00004 Amp

Flash Memories

15 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

YES

NOR TYPE

11.43 mm

20 ms

AT29C010A-12PC by Atmel

AT29C010A-12PC

Atmel

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 32; Package Code: DIP; Package Shape: RECTANGULAR; JESD-30 Code: R-PDIP-T32;

120 ns

BOTTOM/TOP

NO

YES

R-PDIP-T32

e0

42.037 mm

1048576 bit

FLASH

8

1

1,1,1

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

3-STATE

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

IN-LINE

PARALLEL

5

5

Not Qualified

4.826 mm

8K,112K,8K

.0001 Amp

Flash Memories

50 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

YES

NOR TYPE

15.24 mm

10 ms

AT29C010A-12PI by Atmel

AT29C010A-12PI

Atmel

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 32; Package Code: DIP; Package Shape: RECTANGULAR; Sector Size (Words): 8K,112K,8K;

120 ns

BOTTOM/TOP

NO

YES

R-PDIP-T32

e0

42.037 mm

1048576 bit

FLASH

8

1

1,1,1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

IN-LINE

PARALLEL

5

5

Not Qualified

4.826 mm

8K,112K,8K

.0003 Amp

Flash Memories

50 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

YES

NOR TYPE

15.24 mm

10 ms

AT29C010A-15PC by Atmel

AT29C010A-15PC

Atmel

Atmel's AT29C010A-15PC is a 128Kx8 NOR flash memory with 3-STATE output. Operating at 5V, it offers fast access time of 150ns and supports asynchronous mode. Widely used in commercial applications, this CMOS technology-based memory has a max write cycle time of 10ms.

150 ns

BOTTOM/TOP

NO

YES

R-PDIP-T32

e0

42.037 mm

1048576 bit

FLASH

8

1

1,1,1

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

3-STATE

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

IN-LINE

PARALLEL

5

5

Not Qualified

4.826 mm

8K,112K,8K

.0001 Amp

Flash Memories

50 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

YES

NOR TYPE

15.24 mm

10 ms

AT29C040A-12PC by Atmel

AT29C040A-12PC

Atmel

Atmel's AT29C040A-12PC is a 512Kx8 NOR flash memory with 256-word page size, operating at 5V. It features asynchronous mode, 3-STATE output, and 10ms write cycle time. Widely used in commercial applications for data storage due to its fast access time of 120ns and low standby current of 0.0001Amp.

120 ns

AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION

BOTTOM/TOP

NO

YES

R-PDIP-T32

e0

42.037 mm

4194304 bit

FLASH

8

1

2K

32

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX8

3-STATE

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

IN-LINE

256

PARALLEL

5

5

Not Qualified

4.826 mm

256

.0001 Amp

Flash Memories

40 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

YES

NOR TYPE

15.24 mm

10 ms

AT29C040A-12PI by Atmel

AT29C040A-12PI

Atmel

AT29C040A-12PI by Atmel is a 512Kx8 NOR flash memory with 256-word page size. Operating at 5V, it has an access time of 120ns and supports asynchronous mode. Widely used in industrial applications for its 3-STATE output characteristics and toggle bit feature.

120 ns

AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION

BOTTOM/TOP

NO

YES

R-PDIP-T32

e0

42.037 mm

4194304 bit

FLASH

8

1

2K

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

3-STATE

PLASTIC/EPOXY

DIP

DIP32,.6

RECTANGULAR

IN-LINE

256

PARALLEL

5

5

Not Qualified

4.826 mm

256

.0003 Amp

Flash Memories

40 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

YES

NOR TYPE

15.24 mm

10 ms

AT29C010A-12TC by Atmel

AT29C010A-12TC

Atmel

AT29C010A-12TC by Atmel is a NOR type flash memory with an organization of 128Kx8 and a memory density of 1,048,576 bits. It operates asynchronously at a nominal voltage of 5V and has a max access time of 120ns. This flash memory is commonly used in applications that require non-volatile storage for data or program code.

120 ns

BOTTOM/TOP

NO

YES

R-PDSO-G32

e0

18.4 mm

1048576 bit

FLASH

8

3

1

1,1,1

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

240

5

5

Not Qualified

1.2 mm

8K,112K,8K

.00003 Amp

Flash Memories

50 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

8 mm

10 ms

AT29C040A-12TC by Atmel

AT29C040A-12TC

Atmel

Atmel's AT29C040A-12TC is a 512Kx8 NOR flash memory with 256-word page size, operating at 5V. It features 3-state output and asynchronous mode, suitable for commercial applications requiring fast access time of 120ns and low standby current of 0.0001Amp.

120 ns

AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION

BOTTOM/TOP

NO

YES

R-PDSO-G32

e0

18.4 mm

4194304 bit

FLASH

8

3

1

2K

32

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX8

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

256

PARALLEL

240

5

5

Not Qualified

1.2 mm

256

.0001 Amp

Flash Memories

40 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

8 mm

10 ms

AT29C010A-90JC by Atmel

AT29C010A-90JC

Atmel

AT29C010A-90JC by Atmel is a 128Kx8 NOR flash memory chip with 3-STATE output. Operating at 5V, it has a max access time of 90ns and supports asynchronous mode. Ideal for applications requiring fast data polling and parallel interfacing in commercial temperature environments.

90 ns

BOTTOM/TOP

NO

YES

R-PQCC-J32

e0

13.97 mm

1048576 bit

FLASH

8

2

1

1,1,1

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

225

5

5

Not Qualified

3.556 mm

8K,112K,8K

.00003 Amp

Flash Memories

50 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

Tin/Lead (Sn/Pb)

J BEND

1.27 mm

QUAD

30

YES

NOR TYPE

11.43 mm

10 ms

AT29C010A-90JI by Atmel

AT29C010A-90JI

Atmel

Atmel's AT29C010A-90JI is a 128Kx8 NOR Flash Memory with 90ns access time, operating at 5V. Suitable for industrial applications, it offers asynchronous operation, 3-state output, and a parallel interface. With a compact chip carrier package and low standby current of 0.00003A, it provides reliable non-volatile memory storage.

90 ns

BOTTOM/TOP

NO

YES

R-PQCC-J32

e0

13.97 mm

1048576 bit

FLASH

8

2

1

1,1,1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

225

5

5

Not Qualified

3.556 mm

8K,112K,8K

.00003 Amp

Flash Memories

50 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn/Pb)

J BEND

1.27 mm

QUAD

30

YES

NOR TYPE

11.43 mm

10 ms

AT29C512-70JC by Atmel

AT29C512-70JC

Atmel

AT29C512-70JC by Atmel is a 64KX8 NOR flash memory chip with 512 sectors, operating at 5V. It features a 128-word page size, 10000 write/erase cycles endurance, and 70ns access time. Ideal for applications requiring high-speed parallel data storage in commercial-grade devices.

70 ns

AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION

NO

YES

10000 Write/Erase Cycles

R-PQCC-J32

e0

13.97 mm

524288 bit

FLASH

8

2

1

512

32

65536 words

64K

ASYNCHRONOUS

70 Cel

0 Cel

64KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

128

PARALLEL

225

5

5

Not Qualified

3.556 mm

128

.0001 Amp

Flash Memories

50 mA

5.25 V

4.75 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

YES

NOR TYPE

11.43 mm

10 ms

MT28F400B5SG-8BET by Micron Technology

MT28F400B5SG-8BET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 44; Package Code: SOP; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

80 ns

USER SELECTABLE 5V OR 12V VPP; BOTTOM BOOT BLOCK

8

BOTTOM

YES

NO

R-PDSO-G44

e0

28.195 mm

4194304 bit

FLASH

16

1

1,2,1,3

44

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

SOP

SOP44,.63

RECTANGULAR

SMALL OUTLINE

PARALLEL

235

5

5

Not Qualified

2.7 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

55 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn/Pb)

GULL WING

1.27 mm

DUAL

30

NO

NOR TYPE

12.6 mm

MT28F400B5SG-8B by Micron Technology

MT28F400B5SG-8B

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 44; Package Code: SOP; Package Shape: RECTANGULAR; Operating Mode: ASYNCHRONOUS;

80 ns

ALSO CONFG AS 256KX16; BOTTOM BOOT BLOCK

8

BOTTOM

YES

NO

R-PDSO-G44

e0

28.195 mm

4194304 bit

FLASH

16

1

1,2,1,3

44

262144 words

256K

ASYNCHRONOUS

70 Cel

0 Cel

256KX16

PLASTIC/EPOXY

SOP

SOP44,.63

RECTANGULAR

SMALL OUTLINE

PARALLEL

5

5

Not Qualified

2.7 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

55 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

NO

NOR TYPE

12.6 mm

MT28F400B5SG-8TET by Micron Technology

MT28F400B5SG-8TET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 44; Package Code: SOP; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

80 ns

USER SELECTABLE 5V OR 12V VPP; TOP BOOT BLOCK

8

TOP

YES

NO

R-PDSO-G44

e0

28.195 mm

4194304 bit

FLASH

16

1

1,2,1,3

44

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

SOP

SOP44,.63

RECTANGULAR

SMALL OUTLINE

PARALLEL

5

5

Not Qualified

2.7 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

55 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

NO

NOR TYPE

12.6 mm

MT28F400B5SG-8T by Micron Technology

MT28F400B5SG-8T

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 44; Package Code: SOP; Package Shape: RECTANGULAR; Width: 12.6 mm;

80 ns

ALSO CONFG AS 256KX16; TOP BOOT BLOCK

8

TOP

YES

NO

R-PDSO-G44

e0

28.195 mm

4194304 bit

FLASH

16

1

1,2,1,3

44

262144 words

256K

ASYNCHRONOUS

70 Cel

0 Cel

256KX16

PLASTIC/EPOXY

SOP

SOP44,.63

RECTANGULAR

SMALL OUTLINE

PARALLEL

5

5

Not Qualified

2.7 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

55 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

NO

NOR TYPE

12.6 mm

MT28F400B5WG-8BET by Micron Technology

MT28F400B5WG-8BET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Surface Mount: YES;

80 ns

USER SELECTABLE 5V OR 12V VPP; BOTTOM BOOT BLOCK

8

BOTTOM

YES

NO

R-PDSO-G48

e0

18.4 mm

4194304 bit

FLASH

16

1

1,2,1,3

48

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

5

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

55 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

12 mm

MT28F400B5WG-8B by Micron Technology

MT28F400B5WG-8B

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; No. of Functions: 1;

80 ns

ALSO CONFG AS 256KX16; BOTTOM BOOT BLOCK

8

BOTTOM

YES

NO

R-PDSO-G48

e0

18.4 mm

4194304 bit

FLASH

16

1

1,2,1,3

48

262144 words

256K

ASYNCHRONOUS

70 Cel

0 Cel

256KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

5

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

55 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

12 mm

MT28F400B5WG-8TET by Micron Technology

MT28F400B5WG-8TET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Command User Interface: YES;

80 ns

USER SELECTABLE 5V OR 12V VPP; TOP BOOT BLOCK

8

TOP

YES

NO

R-PDSO-G48

e0

18.4 mm

4194304 bit

FLASH

16

1

1,2,1,3

48

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

5

5

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

55 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

12 mm

MT28F400B5WG-8T by Micron Technology

MT28F400B5WG-8T

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

80 ns

INPUTS & OUTPUTS FULLY TTL COMPATIBLE; CONFG 5V OR 12V VPP; TOP BOOT BLOCK

8

TOP

YES

NO

R-PDSO-G48

e0

18.4 mm

4194304 bit

FLASH

16

1

1,2,1,3

48

262144 words

256K

ASYNCHRONOUS

70 Cel

0 Cel

256KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

235

5

5

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

55 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

Tin/Lead (Sn/Pb)

GULL WING

.5 mm

DUAL

30

NO

NOR TYPE

12 mm

MX29F800CBMI-70G by Macronix

MX29F800CBMI-70G

Macronix

Macronix's MX29F800CBMI-70G is a 512Kx16 NOR flash memory with 100,000 write/erase cycles. Operating at 5V, it offers fast access time of 70ns and endurance for industrial applications. With parallel interface and toggle bit support, it suits systems requiring reliable non-volatile memory storage.

70 ns

BOTTOM BOOT BLOCK

8

BOTTOM

YES

YES

100000 Write/Erase Cycles

R-PDSO-G44

e3

28.5 mm

8388608 bit

FLASH

16

1

1,2,1,15

44

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

SOP

SOP44,.63

RECTANGULAR

SMALL OUTLINE

PARALLEL

5

5

Not Qualified

YES

3 mm

16K,8K,32K,64K

.00005 Amp

Flash Memories

50 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN

GULL WING

1.27 mm

DUAL

YES

NOR TYPE

12.6 mm

LE25S81MCTWG by Onsemi

LE25S81MCTWG

Onsemi

LE25S81MCTWG by Onsemi is a 1MX8 Flash Memory with 40 MHz Clock Frequency. Operating at -40 to 90 °C, it's ideal for industrial applications requiring 8388608 bit memory density and 1.65-1.95 V supply voltage range.

40 MHz

R-PDSO-G8

4.9 mm

8388608 bit

FLASH

8

1

8

1048576 words

1M

SYNCHRONOUS

90 Cel

-40 Cel

1MX8

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

SERIAL

NOT SPECIFIED

1.8

1.75 mm

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

3.9 mm

LE25U81AMCTWG by Onsemi

LE25U81AMCTWG

Onsemi

The Onsemi LE25U81AMCTWG is a 1MX8 Flash Memory IC with 8388608 bit memory density. It operates in synchronous mode at up to 40 MHz clock frequency, suitable for industrial applications. With a small outline package style and Gull Wing terminals, it offers reliable performance in a compact form factor.

40 MHz

R-PDSO-G8

4.9 mm

8388608 bit

FLASH

8

1

8

1048576 words

1M

SYNCHRONOUS

85 Cel

-40 Cel

1MX8

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

SERIAL

NOT SPECIFIED

2.7

1.75 mm

2.7 V

2.3 V

2.5

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

3.9 mm

MT29F2G16ABBEAH4:E by Micron Technology

MT29F2G16ABBEAH4:E

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Technology: CMOS;

25 ns

YES

NO

R-PBGA-B63

e1

11 mm

2147483648 bit

FLASH

16

1

2K

63

134217728 words

128M

ASYNCHRONOUS

70 Cel

0 Cel

128MX16

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1K

PARALLEL

260

1.8

1.8

Not Qualified

YES

1 mm

64K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

NO

SLC NAND TYPE

9 mm

MT29F2G16ABBEAH4:ETR by Micron Technology

MT29F2G16ABBEAH4:ETR

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Supply Current: 20 mA;

25 ns

YES

NO

R-PBGA-B63

e1

11 mm

2147483648 bit

FLASH

16

1

2K

63

134217728 words

128M

ASYNCHRONOUS

70 Cel

0 Cel

128MX16

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1K

PARALLEL

260

1.8

1.8

Not Qualified

YES

1 mm

64K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

NO

SLC NAND TYPE

9 mm

AT49LV001-90JC by Atmel

AT49LV001-90JC

Atmel

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 32; Package Code: QCCJ; Package Shape: RECTANGULAR; Power Supplies (V): 3.3;

90 ns

BOTTOM

YES

YES

R-PQCC-J32

e0

13.97 mm

1048576 bit

FLASH

8

2

1

1,2,1,1

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

225

3.3

3

Not Qualified

3.556 mm

16K,8K,32K,64K

.00005 Amp

Flash Memories

50 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

YES

NOR TYPE

11.43 mm

AT49BV1614-90TI by Atmel

AT49BV1614-90TI

Atmel

AT49BV1614-90TI by Atmel is a 1MX16 NOR flash memory with 3V supply, operating at -40 to 85°C. It features asynchronous mode, 90ns access time, and 8K/32K/64K sector sizes. Ideal for industrial applications requiring fast data access and reliable non-volatile storage in a compact package.

90 ns

8

BOTTOM

YES

YES

R-PDSO-G48

e0

18.4 mm

16777216 bit

FLASH

16

1

8,2,30

48

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3

3

Not Qualified

YES

1.2 mm

8K,32K,64K

.00001 Amp

Flash Memories

50 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

12 mm

AT29C256-12PI by Atmel

AT29C256-12PI

Atmel

Atmel's AT29C256-12PI is a 32KX8 NOR flash memory with 3-STATE output, operating at 5V. It has a page size of 64 words and offers fast access time of 120 ns. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact IN-LINE package.

120 ns

AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION

NO

YES

R-PDIP-T28

e0

36.95 mm

262144 bit

FLASH

8

1

512

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

DIP

DIP28,.6

RECTANGULAR

IN-LINE

64

PARALLEL

5

5

Not Qualified

5.59 mm

64

.0003 Amp

Flash Memories

50 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

YES

NOR TYPE

15.24 mm

10 ms

AT49F040-12TI by Atmel

AT49F040-12TI

Atmel

AT49F040-12TI by Atmel is a 512KX8 NOR flash memory with 3-STATE output, operating at 5V. It features industrial temperature grade, parallel interface, and bottom boot block. Ideal for applications requiring fast access time of 120ns, such as embedded systems and industrial automation.

120 ns

BYTE PROGRAMMABLE; HARDWARE DATA PROTECTION; 10000 WRITE CYCLES

BOTTOM

YES

YES

R-PDSO-G32

e0

18.4 mm

4194304 bit

FLASH

8

3

1

1,1

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

240

5

5

Not Qualified

1.2 mm

16K,496K

.0003 Amp

Flash Memories

90 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

8 mm

AT29C020-12JI by Atmel

AT29C020-12JI

Atmel

AT29C020-12JI by Atmel is a 256Kx8 NOR flash memory chip with 3-STATE output, operating at 5V. It has a fast access time of 120ns and supports asynchronous operation. Ideal for industrial applications requiring reliable non-volatile memory storage in compact form factors.

120 ns

BOTTOM/TOP

NO

YES

R-PQCC-J32

e0

13.97 mm

2097152 bit

FLASH

8

2

1

1K

32

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

225

5

5

Not Qualified

3.556 mm

256

.0003 Amp

Flash Memories

40 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

YES

NOR TYPE

11.43 mm

10 ms

AT29C256-12JC by Atmel

AT29C256-12JC

Atmel

AT29C256-12JC by Atmel is a 32Kx8 NOR flash memory chip with 512 sectors, operating at 5V. It features a 64-word page size, 120ns access time, and supports asynchronous mode. Ideal for applications requiring fast data polling and low standby current consumption.

120 ns

AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION

NO

YES

R-PQCC-J32

e0

13.97 mm

262144 bit

FLASH

8

2

1

512

32

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

64

PARALLEL

225

5

5

Not Qualified

3.556 mm

64

.0003 Amp

Flash Memories

50 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

Tin/Lead (Sn/Pb)

J BEND

1.27 mm

QUAD

12

YES

NOR TYPE

11.43 mm

10 ms

AT29C256-70JC by Atmel

AT29C256-70JC

Atmel

AT29C256-70JC by Atmel is a 32Kx8 NOR flash memory chip with 3-STATE output, operating at 5V. It has a page size of 64 words and offers fast access time of 70ns. Ideal for applications requiring high-speed parallel memory storage in commercial-grade devices.

70 ns

AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION

NO

YES

R-PQCC-J32

e0

13.97 mm

262144 bit

FLASH

8

2

1

512

32

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

64

PARALLEL

225

5

5

Not Qualified

3.556 mm

64

.0003 Amp

Flash Memories

50 mA

5.25 V

4.75 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

YES

NOR TYPE

11.43 mm

10 ms

AT29C256-70JI by Atmel

AT29C256-70JI

Atmel

AT29C256-70JI by Atmel is a 32Kx8 NOR type Flash Memory with 3-STATE output, operating at 5V. It has a page size of 64 words and offers fast access time of 70ns. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact chip carrier package.

70 ns

AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION

NO

YES

R-PQCC-J32

e0

13.97 mm

262144 bit

FLASH

8

2

1

512

32

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

64

PARALLEL

225

5

5

Not Qualified

3.556 mm

64

.0003 Amp

Flash Memories

50 mA

5.25 V

4.75 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

YES

NOR TYPE

11.43 mm

10 ms

AT29C257-70JC by Atmel

AT29C257-70JC

Atmel

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 32; Package Code: QCCJ; Package Shape: RECTANGULAR; Peak Reflow Temperature (C): 225;

70 ns

HARDWARE AND SOFTWARE DATA PROTECTION; 10000 CYCLES TYPICAL ENDURANCE

NO

YES

10000 Write/Erase Cycles

R-PQCC-J32

e0

13.97 mm

262144 bit

FLASH

8

2

1

32

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

64

PARALLEL

225

5

5

Not Qualified

3.56 mm

.0003 Amp

Flash Memories

50 mA

5.25 V

4.75 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

YES

NOR TYPE

11.43 mm

10 ms

AT29C257-90JC by Atmel

AT29C257-90JC

Atmel

AT29C257-90JC by Atmel is a 32Kx8 NOR flash memory chip with 3-STATE output. Operating at 5V, it offers fast access time of 90ns and endurance of 10k cycles. Ideal for applications requiring high-speed parallel memory storage in commercial-grade devices.

90 ns

HARDWARE AND SOFTWARE DATA PROTECTION; 10000 CYCLES TYPICAL ENDURANCE

NO

YES

10000 Write/Erase Cycles

R-PQCC-J32

e0

13.97 mm

262144 bit

FLASH

8

2

1

32

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

64

PARALLEL

225

5

5

Not Qualified

3.56 mm

.0003 Amp

Flash Memories

50 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

Tin/Lead (Sn/Pb)

J BEND

1.27 mm

QUAD

30

YES

NOR TYPE

11.43 mm

10 ms