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LE25U81AMCTWG

Onsemi

LE25U81AMCTWG by Onsemi

The Onsemi LE25U81AMCTWG is a 1MX8 Flash Memory IC with 8388608 bit memory density. It operates in synchronous mode at up to 40 MHz clock frequency, suitable for industrial applications. With a small outline package style and Gull Wing terminals, it offers reliable performance in a compact form factor.

Median Price

$0.708

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

$0.695

1k+ parts

$0.577

10k+ parts

$0.514

2,000

-

$0.695

$0.577

$0.514

Verical

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.721

10k+ parts

-

2,000

-

-

$0.721

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 370 parts In-Stock

1+ parts

$0.542

100+ parts

-

1k+ parts

-

10k+ parts

-

370

$0.542

-

-

-

Vyrian

USA . 4,570 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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4,570

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,415 parts In-Stock

1+ parts

$0.513

100+ parts

-

1k+ parts

-

10k+ parts

-

1,415

$0.513

-

-

-

Corohmni

South Africa . 178 parts In-Stock

1+ parts

$0.570

100+ parts

-

1k+ parts

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10k+ parts

-

178

$0.570

-

-

-

AZTECH Wire

Italy . 213 parts In-Stock

1+ parts

$9.150

100+ parts

-

1k+ parts

-

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213

$9.150

-

-

-

SupplyDigital Components

Austria . 7,946 parts In-Stock

1+ parts

-

100+ parts

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7,946

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-

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Problanco Electronics

Mexico . 7,274 parts In-Stock

1+ parts

-

100+ parts

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7,274

-

-

-

-

Authorized Procurement Solutions

USA . 7,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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7,000

-

-

-

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TANS Electronics

Latvia . 2,740 parts In-Stock

1+ parts

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2,740

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-

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Microchip USA

USA . 2,690 parts In-Stock

1+ parts

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2,690

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Kulean Microsystems

USA . 2,438 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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2,438

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-

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Kepictronics

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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2,000

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-

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UHIMA Technologies

Türkiye . 845 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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845

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Overview

Enhance your electronic devices with the LE25U81AMCTWG by Onsemi, a top-quality flash memory that guarantees reliable performance and durability. Manufactured by the reputable Onsemi brand, this product is designed for various applications in the tech industry. With its small outline package style and synchronous operating mode, this flash memory offers seamless integration and efficient operation. Upgrade your devices with the cutting-edge technology of the LE25U81AMCTWG and experience enhanced functionality and increased storage capacity.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic and epoxy materials provide durability and protection for the internal components of the flash memory, increasing its reliability and longevity.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for faster data transfer rates and more efficient performance compared to asynchronous operation.

Nominal Supply Voltage: 2.5V

Operating at a lower nominal supply voltage helps in reducing power consumption and heat generation, making the product more energy efficient.

Maximum Clock Frequency: 40 MHz

A high maximum clock frequency enables quick data access and transfer speeds, ensuring smooth and efficient operation of the flash memory.

Temperature Grade: INDUSTRIAL

Designed to withstand a wide range of temperatures, the industrial grade flash memory is suitable for use in harsh environmental conditions, enhancing its versatility and reliability.

Technical Specifications

Flash Memory LE25U81AMCTWG attributes and parameters. Explore more Flash Memory devices from Onsemi

Specs

Maximum Clock Frequency (fCLK):

40 MHz

JESD-30 Code:

R-PDSO-G8

Length:

4.9 mm

Memory Density:

8388608 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

8

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

1MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Programming Voltage (V):

2.7

Maximum Seated Height:

1.75 mm

Maximum Supply Voltage (Vsup):

2.7 V

Minimum Supply Voltage (Vsup):

2.3 V

Nominal Supply Voltage / Vsup (V):

2.5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

3.9 mm

Trade Compliance

LE25U81AMCTWG Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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