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LE25FU406BLF

Onsemi

LE25FU406BLF by Onsemi

LE25FU406BLF by Onsemi is a NOR type FLASH Memory IC with 512KX8 organization, SPI serial bus type, and 30 MHz clock frequency. It is ideal for industrial applications requiring high endurance of 100000 write/erase cycles and a memory density of 4194304 bits.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,300 parts In-Stock

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Digiode

USA . 428 parts In-Stock

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428

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Problanco Electronics

Mexico . 8,063 parts In-Stock

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8,063

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TANS Electronics

Latvia . 5,362 parts In-Stock

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Corphita

USA . 2,016 parts In-Stock

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SupplyDigital Components

Austria . 1,667 parts In-Stock

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UHIMA Technologies

Türkiye . 697 parts In-Stock

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697

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Kulean Microsystems

USA . 273 parts In-Stock

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Corohmni

South Africa . 233 parts In-Stock

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Overview

Unlock the power of reliable and efficient data storage with the LE25FU406BLF by Onsemi. Crafted with precision and quality, this flash memory device offers unmatched performance for a wide range of applications. From industrial to consumer electronics, this product is designed to meet your every need. With its high endurance and low power consumption, you can trust that your data will be safe and secure. Experience the value and benefits that only Onsemi can deliver, with the LE25FU406BLF at the forefront of cutting-edge technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used in the package body ensures durability and protection for the flash memory, making it suitable for various environments.

Surface Mount: YES

Being surface mountable allows for easy and efficient installation on circuit boards, saving space and facilitating mass production.

Power Supplies (V): 2.5/3.3

The dual power supply options of 2.5V and 3.3V provide flexibility and compatibility with different systems and power requirements.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85 °C, this flash memory can function reliably in industrial environments with elevated temperature conditions.

Organization: 512KX8

The organization of 512KX8 allows for efficient data storage and retrieval, making it suitable for applications that require high-speed access to large amounts of data.

Write Protection: HARDWARE/SOFTWARE

The option for both hardware and software write protection enhances data security and prevents accidental data corruption or loss.

Technology: CMOS

Utilizing CMOS technology offers low power consumption and high-speed operation, making the flash memory energy-efficient and fast.

Memory Density: 4194304 bit

The high memory density of 4194304 bit allows for storing a large amount of data in a compact form factor, making it suitable for applications that require high storage capacity.

Endurance: 100000 Write/Erase Cycles

With an endurance of 100,000 write/erase cycles, this flash memory is reliable and long-lasting, ensuring data integrity over multiple read/write operations.

Serial Bus Type: SPI

The SPI serial bus type offers a convenient and efficient communication interface, enabling seamless integration with a wide range of microcontrollers and devices.

Technical Specifications

Flash Memory LE25FU406BLF attributes and parameters. Explore more Flash Memory devices from Onsemi

Specs

Maximum Clock Frequency (fCLK):

30 MHz

Minimum Data Retention Time:

20

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-N8

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

8

No. of Words:

524288 words

No. of Words Code:

512K

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

SON

Package Equivalence Code:

SOLCC8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Power Supplies (V):

2.5/3.3

Qualification:

Not Qualified

Serial Bus Type:

SPI

Maximum Standby Current:

.00001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

15 mA

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Type:

NOR TYPE

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

LE25FU406BLF Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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