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LE25U20AMB-AH

Onsemi

LE25U20AMB-AH by Onsemi

LE25U20AMB-AH by Onsemi is a NOR type flash memory with 256Kx8 organization and a memory density of 2,097,152 bits. It operates at a voltage of 2.5V and has a max clock frequency of 30 MHz. This memory IC is commonly used in industrial applications requiring high endurance and reliable data storage.

Median Price

$0.974

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 1,000 parts In-Stock

1+ parts

$0.703

100+ parts

$0.615

1k+ parts

$0.550

10k+ parts

-

1,000

$0.703

$0.615

$0.550

-

Chip1Stop

Japan . 1,000 parts In-Stock

1+ parts

$0.829

100+ parts

$0.631

1k+ parts

$0.556

10k+ parts

-

1,000

$0.829

$0.631

$0.556

-

Farnell

UK . 2,010 parts In-Stock

1+ parts

$1.120

100+ parts

$0.968

1k+ parts

$0.909

10k+ parts

$0.830

2,010

$1.120

$0.968

$0.909

$0.830

Newark

USA . 2,010 parts In-Stock

1+ parts

$1.530

100+ parts

$1.420

1k+ parts

-

10k+ parts

-

2,010

$1.530

$1.420

-

-

Element14

Singapore . 2,010 parts In-Stock

1+ parts

$1.850

100+ parts

$1.600

1k+ parts

$1.370

10k+ parts

$1.350

2,010

$1.850

$1.600

$1.370

$1.350

Verical

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

$0.615

1k+ parts

$0.550

10k+ parts

-

1,000

-

$0.615

$0.550

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 861 parts In-Stock

1+ parts

$0.668

100+ parts

-

1k+ parts

-

10k+ parts

-

861

$0.668

-

-

-

Nova Conductors

Japan . 500 parts In-Stock

1+ parts

$0.706

100+ parts

-

1k+ parts

-

10k+ parts

-

500

$0.706

-

-

-

Chip Stock

USA . 11,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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11,500

-

-

-

-

Flip Electronics

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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6,000

-

-

-

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Vyrian

USA . 1,277 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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1,277

-

-

-

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Elcom Components

USA . 908 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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908

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 1,977 parts In-Stock

1+ parts

$0.520

100+ parts

$0.507

1k+ parts

$0.504

10k+ parts

-

1,977

$0.520

$0.507

$0.504

-

Ampacity Inc.

Singapore . 1,346 parts In-Stock

1+ parts

$0.520

100+ parts

-

1k+ parts

-

10k+ parts

-

1,346

$0.520

-

-

-

Corohmni

South Africa . 350 parts In-Stock

1+ parts

$0.615

100+ parts

-

1k+ parts

-

10k+ parts

-

350

$0.615

-

-

-

Corphita

USA . 1,155 parts In-Stock

1+ parts

$0.633

100+ parts

-

1k+ parts

-

10k+ parts

-

1,155

$0.633

-

-

-

Argo Parts USA

USA . 935 parts In-Stock

1+ parts

$0.706

100+ parts

-

1k+ parts

-

10k+ parts

$0.685

935

$0.706

-

-

$0.685

Aztec Data Supply Inc.

USA . 1,585 parts In-Stock

1+ parts

$2.700

100+ parts

-

1k+ parts

-

10k+ parts

-

1,585

$2.700

-

-

-

Perfect Parts

USA . 17,993 parts In-Stock

1+ parts

-

100+ parts

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17,993

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Futuretech Components

Singapore . 12,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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12,000

-

-

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Lixinc

USA . 11,028 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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11,028

-

-

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Problanco Electronics

Mexico . 6,848 parts In-Stock

1+ parts

-

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6,848

-

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Authorized Procurement Solutions

USA . 4,625 parts In-Stock

1+ parts

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4,625

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TANS Electronics

Latvia . 3,446 parts In-Stock

1+ parts

-

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3,446

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SupplyDigital Components

Austria . 2,462 parts In-Stock

1+ parts

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2,462

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Kepictronics

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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2,000

-

-

-

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Continental Prestige Electronics

USA . 1,711 parts In-Stock

1+ parts

-

100+ parts

$0.484

1k+ parts

$0.463

10k+ parts

-

1,711

-

$0.484

$0.463

-

iodParts Technologies Inc.

India . 1,435 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

-

10k+ parts

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1,435

-

-

-

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Netroflash

USA . 500 parts In-Stock

1+ parts

-

100+ parts

$0.692

1k+ parts

$0.671

10k+ parts

$0.657

500

-

$0.692

$0.671

$0.657

Robosynatics

Brazil . 500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

500

-

-

-

-

Lucentia Tech

USA . 500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

500

-

-

-

-

UHIMA Technologies

Türkiye . 229 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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229

-

-

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Kulean Microsystems

USA . 19 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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19

-

-

-

-

Overview

Discover the LE25U20AMB-AH, a high-quality flash memory chip by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch performance and reliability. This versatile chip offers numerous benefits and advantages for customers, including fast data transfer rates, low power consumption, and excellent endurance with 100,000 write/erase cycles. Ideal for industrial applications, the LE25U20AMB-AH is designed to withstand harsh conditions and operates at temperatures ranging from -40°C to 85°C. Upgrade your devices with this compact and efficient flash memory chip today!

Feature Benefit Bullets

Package Body Material

PLASTIC/EPOXY: The plastic/epoxy package body material provides durability and protection for the flash memory, making it a reliable choice for various applications.

Surface Mount

YES: The surface mount feature allows for easy installation and integration into electronic devices, making it suitable for compact designs and space-restricted environments.

No. of Functions

1: With a single function, this flash memory product simplifies the design and implementation process, ensuring straightforward application usage.

Package Shape

RECTANGULAR: The rectangular package shape offers versatility in mounting and placement options, allowing for convenient integration within different electronic systems.

Operating Mode

SYNCHRONOUS: The synchronous operating mode ensures efficient data transfer and synchronization, enhancing the overall performance and speed of the flash memory.

Nominal Supply Voltage / Vsup (V)

2.5: The 2.5V nominal supply voltage provides compatibility with a wide range of devices and power sources, making this flash memory suitable for diverse applications.

Power Supplies (V)

2.5/3.3: With multiple power supply options, including 2.5V and 3.3V, this flash memory can be easily integrated into systems with varying voltage requirements.

No. of Terminals

8: The presence of 8 terminals allows for efficient and reliable connectivity, ensuring proper data transmission between the flash memory and the host device.

Package Style (Meter)

SMALL OUTLINE: The small outline package style offers compactness and space-saving benefits, making this flash memory ideal for devices with limited size constraints.

Maximum Operating Temperature

85 °C: The flash memory's ability to operate at high temperatures up to 85°C ensures its reliability and performance even in demanding environmental conditions.

Organization

256KX8: With an organization of 256KX8, this flash memory provides a high storage capacity of 2,097,152 bits, making it suitable for storing large amounts of data.

Minimum Operating Temperature

40 °C: The flash memory's ability to operate at low temperatures down to -40°C ensures its usability in extreme cold environments, expanding its range of applications.

Terminal Finish

MATTE TIN: The matte tin terminal finish enhances the product's solderability and reliability, allowing for secure and long-lasting connections.

Terminal Position

DUAL: The dual terminal position provides flexibility in terms of mounting and ensures secure and stable connectivity, making it a dependable choice for various applications.

Write Protection

HARDWARE/SOFTWARE: With both hardware and software write protection options, this flash memory allows users to protect their data from accidental modification or erasure, ensuring data security.

Maximum Seated Height

1.75 mm: The flash memory's low seated height of 1.75 mm contributes to its compactness and suitability for devices with limited vertical space.

Maximum Clock Frequency (fCLK)

30 MHz: The flash memory's maximum clock frequency of 30 MHz enables fast data transfer rates, facilitating efficient performance in data-intensive applications.

Width

3.9 mm: The flash memory's width of 3.9 mm ensures its compatibility and ease of integration into various electronic systems and circuit designs.

Minimum Supply Voltage (Vsup)

2.3 V: With a minimum supply voltage of 2.3V, this flash memory can operate with lower power requirements and is suitable for battery-powered devices or applications with limited power availability.

Maximum Time At Peak Reflow Temperature (s)

30: The flash memory's ability to withstand peak reflow temperatures for up to 30 seconds simplifies the manufacturing and assembly processes, ensuring reliable production.

Peak Reflow Temperature °C

260: The flash memory's peak reflow temperature tolerance of 260°C ensures its compatibility with standard soldering processes, facilitating easy integration into electronic devices during assembly.

Type

NOR TYPE: The NOR type flash memory offers fast read operations and random access capabilities, making it an excellent choice for applications that require quick data retrieval and non-sequential access.

Length

4.9 mm: With a length of 4.9 mm, this flash memory fits compactly into electronic systems while providing a high storage capacity, making it suitable for space-constrained applications.

Programming Voltage (V)

2.7: The flash memory's programming voltage of 2.7V ensures efficient and accurate data programming and recording, contributing to reliable and high-performance operation.

Temperature Grade

INDUSTRIAL: The flash memory's industrial temperature grade rating indicates its ability to operate reliably in harsh and demanding industrial environments, ensuring long-term durability and stability.

Technology

CMOS: With complementary metal-oxide-semiconductor (CMOS) technology, this flash memory offers low power consumption, high speed, and compatibility with a wide range of electronic systems.

Parallel or Serial

SERIAL: The serial data transmission mode allows for efficient and simplified data transfer, reducing the complexity of the host device's interface and making it suitable for various applications.

Terminal Form

GULL WING: The Gull Wing terminal form enhances the flash memory's robustness and reliability, providing secure connections and withstand mechanical stress in diverse operating conditions.

Maximum Supply Current

15 mA: The flash memory's maximum supply current of 15 mA ensures its power efficiency and suitability for battery-powered devices or applications with limited power constraints.

No. of Words

262144 words: With a high number of words (262,144), this flash memory offers a large storage capacity, making it suitable for applications that require substantial data storage and retrieval.

Memory Width

8: The flash memory's memory width of 8 bits allows for efficient data processing and storage, enabling compatibility with a wide range of microcontrollers and systems.

Minimum Data Retention Time

20: The flash memory's minimum data retention time of 20 years ensures the long-term integrity and reliability of stored data, making it suitable for critical applications that require data persistence.

Terminal Pitch

1.27 mm: With a terminal pitch of 1.27 mm, this flash memory allows for easier and accurate connections, simplifying the integration process and reducing the risk of misalignment during assembly.

No. of Words Code

256K: The code, "256K," indicates the flash memory's specific configuration with a capacity of 256 kilowords, offering substantial storage space for various data-intensive applications.

Moisture Sensitivity Level (MSL)

3: The MSL rating of 3 ensures safe handling and storage, indicating that the flash memory can withstand moderate moisture exposure, making it easier to handle during manufacturing processes.

Maximum Supply Voltage (Vsup)

3.6 V: The flash memory's maximum supply voltage of 3.6V provides flexibility and compatibility with devices that require higher voltage levels, expanding its range of applications.

Endurance

100000 Write/Erase Cycles: The flash memory's endurance rating of 100,000 write/erase cycles ensures long-lasting and reliable performance, making it suitable for applications that require frequent data modification.

Serial Bus Type

SPI: The Serial Peripheral Interface (SPI) bus type offers efficient and simplified communication between the flash memory and the host device, allowing for seamless integration and optimal data transfer rates.

Maximum Write Cycle Time (tWC)

15 ms: The flash memory's maximum write cycle time of 15 milliseconds ensures fast and efficient data programming, reducing latency and improving overall system performance.

Memory Density

2097152 bit: With a high memory density of 2,097,152 bits, this flash memory provides ample storage capacity, enabling the storage of a large amount of data and increasing the versatility for various applications.

Memory IC Type

FLASH: Being a flash memory IC type, this product offers non-volatile storage capabilities, ease of rewriting, and high-speed access, making it an essential component for data storage applications.

Maximum Standby Current

0.00001 Amp: The flash memory's low maximum standby current of 0.00001 Amp ensures energy efficiency and prolongs battery life in devices that require extended periods of standby operation.

Technical Specifications

Flash Memory LE25U20AMB-AH attributes and parameters. Explore more Flash Memory devices from Onsemi

Specs

Maximum Clock Frequency (fCLK):

30 MHz

Minimum Data Retention Time:

20

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Length:

4.9 mm

Memory Density:

2097152 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

8

No. of Words:

262144 words

No. of Words Code:

256K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Power Supplies (V):

2.5/3.3

Programming Voltage (V):

2.7

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.00001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

15 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.3 V

Nominal Supply Voltage / Vsup (V):

2.5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Type:

NOR TYPE

Width:

3.9 mm

Maximum Write Cycle Time (tWC):

15 ms

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

LE25U20AMB-AH Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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