Loading...

LE25FW418ATT

Onsemi

LE25FW418ATT by Onsemi

LE25FW418ATT by Onsemi is a NOR type Flash Memory with 512Kx8 organization, operating at 50MHz clock frequency. Suitable for commercial applications, it offers 100000 Write/Erase cycles endurance and SPI serial bus interface.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,306 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,306

-

-

-

-

Digiode

USA . 73 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

73

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Problanco Electronics

Mexico . 7,060 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,060

-

-

-

-

TANS Electronics

Latvia . 3,767 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,767

-

-

-

-

Corphita

USA . 1,839 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,839

-

-

-

-

UHIMA Technologies

Türkiye . 621 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

621

-

-

-

-

Kulean Microsystems

USA . 265 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

265

-

-

-

-

Corohmni

South Africa . 199 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

199

-

-

-

-

SupplyDigital Components

Austria . 162 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

162

-

-

-

-

Overview

Unlock endless possibilities with the LE25FW418ATT by Onsemi. This top-notch Flash Memory offers unparalleled quality and reliability, manufactured by the industry-leading Onsemi. Ideal for a wide range of applications, this compact and efficient memory device provides seamless data storage solutions. Experience lightning-fast performance, secure write protection, and superior endurance with the LE25FW418ATT. Elevate your projects with the cutting-edge technology of this NOR type memory IC that is sure to exceed your expectations. Upgrade to Onsemi and experience innovation at its finest.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides durability and protection for the flash memory, making it a reliable choice for long-term use.

Surface Mount: YES

Being surface mountable allows for easy installation and integration into various electronic devices, making it versatile and convenient to use.

Operating Mode: SYNCHRONOUS

The synchronous operating mode ensures efficient and synchronized data transfer, improving overall performance and reliability of the flash memory.

Nominal Supply Voltage: 3V

The nominal supply voltage of 3V provides a stable power source for the flash memory, ensuring consistent and reliable operation in different applications.

Memory IC Type: FLASH

Being a flash memory IC type, this product offers fast read and write speeds, low power consumption, and high endurance, making it suitable for a wide range of data storage and retrieval needs.

Technical Specifications

Flash Memory LE25FW418ATT attributes and parameters. Explore more Flash Memory devices from Onsemi

Specs

Maximum Clock Frequency (fCLK):

50 MHz

Minimum Data Retention Time:

20

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G8

Length:

5.2 mm

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

8

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Parallel or Serial:

SERIAL

Programming Voltage (V):

3

Maximum Seated Height:

.85 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.00005 Amp

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Type:

NOR TYPE

Width:

4.4 mm

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

LE25FW418ATT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20