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LE25FW203ATT

Onsemi

LE25FW203ATT by Onsemi

LE25FW203ATT by Onsemi is a NOR type Flash Memory with 256Kx8 organization, 30 MHz clock frequency, and SPI serial bus. It operates at temperatures from 0 to 70 °C, suitable for commercial applications requiring high endurance of 100000 write/erase cycles.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,356 parts In-Stock

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Digiode

USA . 1,303 parts In-Stock

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1,303

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Kulean Microsystems

USA . 5,159 parts In-Stock

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5,159

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TANS Electronics

Latvia . 4,940 parts In-Stock

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Problanco Electronics

Mexico . 4,604 parts In-Stock

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SupplyDigital Components

Austria . 2,463 parts In-Stock

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Corphita

USA . 2,223 parts In-Stock

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UHIMA Technologies

Türkiye . 678 parts In-Stock

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Corohmni

South Africa . 454 parts In-Stock

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Overview

Elevate your electronics projects with the LE25FW203ATT Flash Memory by Onsemi. Known for their top-notch quality and reliability, Onsemi has crafted a durable and efficient memory solution that is ideal for a variety of applications. This flash memory chip offers customers unparalleled value with its high endurance, low power consumption, and versatile serial bus type. Whether you're working on consumer electronics, automotive systems, or industrial equipment, the LE25FW203ATT is the perfect choice to enhance performance and storage capabilities. Upgrade your projects today with this cutting-edge memory solution from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the Flash Memory, ensuring a longer lifespan.

Surface Mount: YES

Ease of installation on circuit boards and space-saving design.

Package Shape: RECTANGULAR

Standard shape that fits well in electronic applications.

Power Supplies (V): 3/3.3

Compatible with common voltage standards, making it versatile for various devices.

No. of Terminals: 8

Sufficient number of terminals for connectivity and data transfer.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE

Compact design for space-constrained environments.

Maximum Operating Temperature: 70 °C

Can withstand moderate operating temperatures without performance issues.

Organization: 256KX8

Optimal organization for efficient data storage and retrieval.

Minimum Operating Temperature: 0 °C

Capable of functioning in low-temperature environments.

Terminal Position: DUAL

Dual terminal position for flexibility in installation and connectivity.

Write Protection: HARDWARE/SOFTWARE

Enhanced security features to protect stored data from accidental writes or erases.

Maximum Clock Frequency (fCLK): 30 MHz

High clock frequency for fast data access and transfer speeds.

Type: NOR TYPE

NOR type memory for fast read operations and random access.

Temperature Grade: COMMERCIAL

Suitable for commercial-grade applications and environments.

Technology: CMOS

CMOS technology for low power consumption and high reliability.

Parallel or Serial: SERIAL

Serial communication for efficient data transfer and control.

Terminal Form: GULL WING

Gull wing terminals for easy soldering and secure connections.

Maximum Supply Current: 15 mA

Low supply current requirement for energy efficiency.

No. of Words: 262144 words

Large memory capacity for storing a vast amount of data.

Memory Width: 8

8-bit data width for efficient data processing and storage.

Minimum Data Retention Time: 20

Data retention time of 20 years ensures long-term data integrity.

Terminal Pitch: 1.27 mm

Standard terminal pitch for compatibility with common connectors.

No. of Words Code: 256K

Numerical code for easy identification of memory capacity.

Endurance: 100000 Write/Erase Cycles

High endurance for frequent write and erase operations without degradation.

Serial Bus Type: SPI

SPI bus type for serial communication with other devices.

Memory Density: 2097152 bit

High memory density for storing large amounts of data in a compact size.

Memory IC Type: FLASH

FLASH memory type for fast data access and high-speed read/write operations.

Maximum Standby Current: 0.00001 Amp

Ultra-low standby current for minimal power consumption during idle periods.

Technical Specifications

Flash Memory LE25FW203ATT attributes and parameters. Explore more Flash Memory devices from Onsemi

Specs

Maximum Clock Frequency (fCLK):

30 MHz

Minimum Data Retention Time:

20

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G8

Memory Density:

2097152 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

8

No. of Words:

262144 words

No. of Words Code:

256K

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

256KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

SERIAL

Power Supplies (V):

3/3.3

Qualification:

Not Qualified

Serial Bus Type:

SPI

Maximum Standby Current:

.00001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

15 mA

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Type:

NOR TYPE

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

LE25FW203ATT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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