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LE25FU406BTT

Onsemi

LE25FU406BTT by Onsemi

LE25FU406BTT by Onsemi is a NOR type Flash Memory with 512Kx8 organization, SPI serial bus type, and 30 MHz clock frequency. It operates in industrial temperature range (-40 to 85 °C) and offers 100000 write/erase cycles. Ideal for applications requiring high-speed data storage in compact devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,762 parts In-Stock

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1,762

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Vyrian

USA . 1,662 parts In-Stock

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1,662

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Distributors (Availability)

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SupplyDigital Components

Austria . 7,103 parts In-Stock

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7,103

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Kulean Microsystems

USA . 5,330 parts In-Stock

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5,330

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TANS Electronics

Latvia . 1,826 parts In-Stock

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1,826

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UHIMA Technologies

Türkiye . 983 parts In-Stock

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983

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Corphita

USA . 799 parts In-Stock

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799

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Problanco Electronics

Mexico . 449 parts In-Stock

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449

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Corohmni

South Africa . 317 parts In-Stock

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Overview

Unlock the power of reliable and high-quality flash memory with the LE25FU406BTT by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch products that are perfect for a wide range of applications. From industrial to consumer electronics, this flash memory offers unmatched value and benefits. Experience fast data transfer speeds, secure write protection, and long-lasting endurance with this versatile product. Upgrade your devices today with the LE25FU406BTT and enjoy the advantages of cutting-edge technology at your fingertips.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for portable devices.

Surface Mount: YES

Surface mount capability allows for easy and efficient installation on circuit boards.

Power Supplies (V): 2.5/3.3

Compatible with common power supply voltages, providing flexibility in design and integration.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, the product can withstand harsh environmental conditions.

Organization: 512KX8

The 512Kx8 organization allows for efficient data storage and retrieval in various applications.

Write Protection: HARDWARE/SOFTWARE

Provides flexibility in protecting data from unauthorized writes, ensuring data integrity.

Type: NOR TYPE

NOR type flash memory offers fast read speeds, making it suitable for devices requiring quick access to data.

Technology: CMOS

The CMOS technology used in the product ensures low power consumption and high performance.

Memory Density: 4194304 bit

High memory density allows for storing large amounts of data in a compact form factor.

Endurance: 100000 Write/Erase Cycles

High endurance rating ensures long-lasting performance and reliability of the product.

Technical Specifications

Flash Memory LE25FU406BTT attributes and parameters. Explore more Flash Memory devices from Onsemi

Specs

Maximum Clock Frequency (fCLK):

30 MHz

Minimum Data Retention Time:

20

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G8

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

8

No. of Words:

524288 words

No. of Words Code:

512K

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

SERIAL

Power Supplies (V):

2.5/3.3

Qualification:

Not Qualified

Serial Bus Type:

SPI

Maximum Standby Current:

.00001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

15 mA

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Type:

NOR TYPE

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

LE25FU406BTT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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