Loading...

LE25FW406M

Onsemi

LE25FW406M by Onsemi

LE25FW406M by Onsemi is a NOR type Flash Memory with 512Kx8 organization, SPI serial bus type, and 50 MHz clock frequency. It has 100000 write/erase cycles endurance and is ideal for commercial applications requiring 3/3.3V power supplies and small outline package style.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,458 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,458

-

-

-

-

Digiode

USA . 261 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

261

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Kulean Microsystems

USA . 6,404 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,404

-

-

-

-

TANS Electronics

Latvia . 2,192 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,192

-

-

-

-

SupplyDigital Components

Austria . 1,868 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,868

-

-

-

-

Problanco Electronics

Mexico . 924 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

924

-

-

-

-

Corohmni

South Africa . 464 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

464

-

-

-

-

Corphita

USA . 145 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

145

-

-

-

-

UHIMA Technologies

Türkiye . 99 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

99

-

-

-

-

Overview

Elevate your electronics with the LE25FW406M by Onsemi, a top-tier flash memory solution that guarantees reliability and performance. Crafted by industry-leading manufacturer Onsemi, this product promises superior quality and cutting-edge technology. Ideal for a wide range of applications, this flash memory is designed to meet your storage needs with ease. With its high endurance and fast clock frequency, the LE25FW406M offers unbeatable value and benefits for customers looking to enhance their devices. Say goodbye to storage limitations and hello to seamless, efficient operations with this exceptional product.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable.

Surface Mount: YES

Allows for easy installation on circuit boards, saving space and reducing assembly time.

Power Supplies (V): 3/3.3

Compatible with common voltage supplies, providing flexibility in system design.

No. of Terminals: 8

Sufficient number of terminals for connection in a typical circuit setup.

Maximum Operating Temperature: 70 °C

Can operate reliably in moderately high temperature environments.

Organization: 512KX8

Offers a large memory capacity organized in a convenient format for data storage.

Write Protection: HARDWARE/SOFTWARE

Provides options for securing data from accidental or unauthorized writing.

Maximum Clock Frequency (fCLK): 50 MHz

Supports high-speed data transfer for efficient performance.

Type: NOR TYPE

NOR flash memory is known for its fast read speeds, making it ideal for applications requiring quick access to data.

Technology: CMOS

CMOS technology ensures low power consumption and high noise immunity.

Parallel or Serial: SERIAL

Serial communication allows for simpler implementation and reduced pin count.

Endurance: 100000 Write/Erase Cycles

Long lifespan with high endurance for frequent data writing and erasing.

Serial Bus Type: SPI

SPI interface enables easy communication with other devices, making it versatile for various applications.

Memory Density: 4194304 bit

High memory density for storing large amounts of data in a compact form factor.

Technical Specifications

Flash Memory LE25FW406M attributes and parameters. Explore more Flash Memory devices from Onsemi

Specs

Maximum Clock Frequency (fCLK):

50 MHz

Minimum Data Retention Time:

10

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G8

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

8

No. of Terminals:

8

No. of Words:

524288 words

No. of Words Code:

512K

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Power Supplies (V):

3/3.3

Qualification:

Not Qualified

Serial Bus Type:

SPI

Maximum Standby Current:

.000005 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

15 mA

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Type:

NOR TYPE

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

LE25FW406M Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20