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LE25FU406BFN

Onsemi

LE25FU406BFN by Onsemi

LE25FU406BFN by Onsemi is a 512KX8 FLASH Memory IC with synchronous operation, 30 MHz clock frequency, and 2.5V nominal voltage. It is ideal for applications requiring high-speed data storage in compact devices due to its small outline package shape and serial interface.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 551 parts In-Stock

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Vyrian

USA . 541 parts In-Stock

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SupplyDigital Components

Austria . 6,242 parts In-Stock

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TANS Electronics

Latvia . 4,988 parts In-Stock

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Problanco Electronics

Mexico . 3,746 parts In-Stock

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Kulean Microsystems

USA . 2,962 parts In-Stock

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UHIMA Technologies

Türkiye . 499 parts In-Stock

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Corphita

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Corohmni

South Africa . 164 parts In-Stock

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Overview

Unlock the power of reliable and efficient memory storage with the LE25FU406BFN by Onsemi. Manufactured by a trusted industry leader, this flash memory device offers unparalleled quality and performance for a wide range of applications. Its compact design and synchronous operating mode make it ideal for use in various electronic devices. With a nominal supply voltage of 2.5V and a maximum clock frequency of 30 MHz, this product provides exceptional value and benefits to customers seeking fast and seamless data storage solutions. Experience the advantages of cutting-edge technology with the LE25FU406BFN and elevate your project to new heights.

Feature Benefit Bullets

Surface Mount: YES

Ease of installation and space-saving design.

Operating Mode: SYNCHRONOUS

Enhanced data transfer speeds and efficiency.

Nominal Supply Voltage / Vsup (V): 2.5

Optimal voltage for reliable performance and power efficiency.

Maximum Clock Frequency (fCLK): 30 MHz

High-speed operation suitable for demanding applications.

Memory Density: 4194304 bit

Large memory capacity for storing and accessing data efficiently.

Technical Specifications

Flash Memory LE25FU406BFN attributes and parameters. Explore more Flash Memory devices from Onsemi

Specs

Maximum Clock Frequency (fCLK):

30 MHz

JESD-30 Code:

R-XDSO-N8

Length:

6 mm

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

8

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512KX8

Package Body Material:

UNSPECIFIED

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Parallel or Serial:

SERIAL

Programming Voltage (V):

2.7

Qualification:

Not Qualified

Maximum Seated Height:

.85 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.3 V

Nominal Supply Voltage / Vsup (V):

2.5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

5 mm

Trade Compliance

LE25FU406BFN Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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