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LE25FU106BTT

Onsemi

LE25FU106BTT by Onsemi

LE25FU106BTT by Onsemi is a 128Kx8 NOR type Flash Memory with 1048576 bit memory density. Operating at 30 MHz, it has a supply voltage range of 2.3V to 3.6V and is ideal for commercial temperature grade applications requiring small outline, very thin profile packages.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 1,457 parts In-Stock

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Vyrian

USA . 488 parts In-Stock

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488

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Problanco Electronics

Mexico . 5,306 parts In-Stock

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SupplyDigital Components

Austria . 3,256 parts In-Stock

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TANS Electronics

Latvia . 2,297 parts In-Stock

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Corphita

USA . 1,846 parts In-Stock

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UHIMA Technologies

Türkiye . 877 parts In-Stock

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Kulean Microsystems

USA . 751 parts In-Stock

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Corohmni

South Africa . 109 parts In-Stock

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Kepictronics

USA . 62 parts In-Stock

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Overview

Unleash the power of your devices with the LE25FU106BTT Flash Memory by Onsemi. Known for their top-notch quality and innovative technology, Onsemi has created this flash memory to elevate your products to new heights. With a compact design and high-performance capabilities, this flash memory is the perfect solution for a wide range of applications. Experience faster speeds, reliable data storage, and seamless integration with the LE25FU106BTT. Upgrade your products with this cutting-edge technology and stay ahead of the competition.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the flash memory, ensuring long-term reliability.

Surface Mount: YES

Being surface mountable allows for easy installation and integration into various devices and systems.

Nominal Supply Voltage / Vsup (V): 2.5

The 2.5V supply voltage ensures compatibility with a wide range of electronics and power sources.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70 °C, this flash memory can withstand high temperatures, making it suitable for a variety of environments.

Organization: 128KX8

The 128KX8 organization allows for efficient data storage and retrieval, optimizing performance for various applications.

Maximum Clock Frequency (fCLK): 30 MHz

The high maximum clock frequency of 30 MHz enables fast data transfer speeds, making this flash memory ideal for applications that require quick access to stored data.

Type: NOR TYPE

The NOR type flash memory offers fast read speeds and random access capabilities, making it suitable for applications where speed and performance are critical.

Temperature Grade: COMMERCIAL

The commercial temperature grade ensures reliable operation within standard temperature ranges, making this flash memory suitable for a wide range of commercial applications.

Technology: CMOS

The CMOS technology used in this flash memory offers low power consumption and high noise immunity, enhancing overall efficiency and performance.

Memory Density: 1048576 bit

With a memory density of 1048576 bits, this flash memory can store a large amount of data in a compact form factor, making it a versatile and efficient storage solution.

Technical Specifications

Flash Memory LE25FU106BTT attributes and parameters. Explore more Flash Memory devices from Onsemi

Specs

Maximum Clock Frequency (fCLK):

30 MHz

JESD-30 Code:

R-PDSO-G8

Length:

5.2 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

8

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

128KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Parallel or Serial:

SERIAL

Programming Voltage (V):

2.7

Maximum Seated Height:

.85 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.3 V

Nominal Supply Voltage / Vsup (V):

2.5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Type:

NOR TYPE

Width:

4.4 mm

Trade Compliance

LE25FU106BTT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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