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RECTANGULAR Flash Memory 1,448

Flash Memory
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Type Width Maximum Write Cycle Time (tWC) Write Protection
MT29F2G16ABAEAWP-IT:E by Micron Technology

MT29F2G16ABAEAWP-IT:E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Package Style (Meter): SMALL OUTLINE, THIN PROFILE;

25 ns

YES

NO

R-PDSO-G48

18.4 mm

2147483648 bit

FLASH

16

1

2K

48

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

1K

PARALLEL

3/3.3

2.7

Not Qualified

YES

1.2 mm

64K

.0001 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NO

SLC NAND TYPE

12 mm

MT29F2G16ABAEAWP:E by Micron Technology

MT29F2G16ABAEAWP:E

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Length: 18.4 mm;

25 ns

YES

NO

R-PDSO-G48

18.4 mm

2147483648 bit

FLASH

16

1

2K

48

134217728 words

128M

ASYNCHRONOUS

70 Cel

0 Cel

128MX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

1K

PARALLEL

3/3.3

2.7

Not Qualified

YES

1.2 mm

64K

.0001 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

GULL WING

.5 mm

DUAL

NO

SLC NAND TYPE

12 mm

N25Q256A33EF840E by Micron Technology

N25Q256A33EF840E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: HVSON; Package Shape: RECTANGULAR; Minimum Operating Temperature: -40 Cel;

108 MHz

R-PDSO-N8

8 mm

268435456 bit

FLASH

1

1

8

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX1

PLASTIC/EPOXY

HVSON

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

3

1 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

NO LEAD

1.27 mm

DUAL

30

NOR TYPE

6 mm

N25Q256A33EF840F by Micron Technology

N25Q256A33EF840F

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: HVSON; Package Shape: RECTANGULAR; Programming Voltage (V): 3;

108 MHz

R-PDSO-N8

8 mm

268435456 bit

FLASH

1

1

8

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX1

PLASTIC/EPOXY

HVSON

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

NOT SPECIFIED

3

1 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

NO LEAD

1.27 mm

DUAL

NOT SPECIFIED

6 mm

N25Q256A73ESF40G by Micron Technology

N25Q256A73ESF40G

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 16; Package Code: SOP; Package Shape: RECTANGULAR; Memory Density: 268435456 bit;

108 MHz

R-PDSO-G16

10.3 mm

268435456 bit

FLASH

1

1

16

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX1

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3

2.65 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

30

NOR TYPE

7.5 mm

M25P16-VMC6G by Micron Technology

M25P16-VMC6G

Micron Technology

Micron Technology's M25P16-VMC6G is a 2MX8 NOR flash memory with 16777216 bits. It operates at 75 MHz clock frequency, has 100000 write/erase cycles endurance, and uses SPI serial bus. Ideal for industrial applications requiring reliable data storage in a compact form factor.

75 MHz

20

100000 Write/Erase Cycles

R-PDSO-N8

4 mm

16777216 bit

FLASH

8

1

8

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX8

PLASTIC/EPOXY

VSON

SOLCC8,.12,32

RECTANGULAR

SMALL OUTLINE, VERY THIN PROFILE

SERIAL

260

3/3.3

3

Not Qualified

.6 mm

SPI

.00001 Amp

Flash Memories

15 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

NO LEAD

.8 mm

DUAL

30

NOR TYPE

3 mm

HARDWARE/SOFTWARE

M25P20-VMN6PBA by Micron Technology

M25P20-VMN6PBA

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Maximum Time At Peak Reflow Temperature (s): 30;

75 MHz

20

100000 Write/Erase Cycles

R-PDSO-G8

4.9 mm

2097152 bit

FLASH

8

1

8

2097152 words

256K

SYNCHRONOUS

85 Cel

-40 Cel

256KX8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3/3.3

2.7

Not Qualified

1.75 mm

SPI

.000005 Amp

Flash Memories

15 mA

3.6 V

2.3 V

2.7

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

30

NOR TYPE

3.9 mm

HARDWARE/SOFTWARE

M25P20-VMP6GB by Micron Technology

M25P20-VMP6GB

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: HVSON; Package Shape: RECTANGULAR; Minimum Data Retention Time: 20;

75 MHz

20

100000 Write/Erase Cycles

R-PDSO-N8

6 mm

2097152 bit

FLASH

8

1

8

2097152 words

256K

SYNCHRONOUS

85 Cel

-40 Cel

256KX8

PLASTIC/EPOXY

HVSON

SOLCC8,.25

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

3/3.3

2.7

Not Qualified

.9 mm

SPI

.000005 Amp

Flash Memories

15 mA

3.6 V

2.3 V

2.7

YES

CMOS

INDUSTRIAL

NO LEAD

1.27 mm

DUAL

30

NOR TYPE

5 mm

HARDWARE/SOFTWARE

JS28F128P33BF70A by Micron Technology

JS28F128P33BF70A

Micron Technology

Micron Technology's JS28F128P33BF70A is a NOR type Flash Memory with 8MX16 organization, operating at 3V. It features a small outline package, synchronous mode, and industrial temperature grade. Ideal for applications requiring fast access times and high memory density in industrial settings.

20 ns

BOTTOM

YES

YES

NO

R-PDSO-G56

18.4 mm

134217728 bit

FLASH

16

1

4,127

56

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8

PARALLEL

260

2.5/3.3

3

Not Qualified

1.2 mm

16K,64K

.002 Amp

Flash Memories

28 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

30

NO

NOR TYPE

14 mm

MT29F16G08AJADAWP-IT:D by Micron Technology

MT29F16G08AJADAWP-IT:D

Micron Technology

MT29F16G08AJADAWP-IT:D by Micron Technology is a 3.3V SLC NAND Flash Memory with 2GX8 organization, operating from -40 to 85°C. It features a page size of 2K words, sector size of 128K words, and parallel interface. Ideal for industrial applications requiring fast access time and low standby current.

25 ns

YES

NO

R-PDSO-G48

18.4 mm

17179869184 bit

FLASH

8

1

16K

48

2147483648 words

2G

ASYNCHRONOUS

85 Cel

-40 Cel

2GX8

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

2K

PARALLEL

260

3.3

3.3

Not Qualified

YES

1.2 mm

128K

.0001 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

30

NO

SLC NAND TYPE

12 mm

MT29F2G08ABBEAH4:E by Micron Technology

MT29F2G08ABBEAH4:E

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Terminal Position: BOTTOM;

25 ns

YES

NO

R-PBGA-B63

11 mm

2147483648 bit

FLASH

8

1

2K

63

268435456 words

256M

ASYNCHRONOUS

70 Cel

0 Cel

256MX8

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

2K

PARALLEL

260

1.8

1.8

Not Qualified

YES

1 mm

128K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

30

NO

SLC NAND TYPE

9 mm

MT29F2G16ABBEAHC:E by Micron Technology

MT29F2G16ABBEAHC:E

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Memory Density: 2147483648 bit;

25 ns

YES

NO

R-PBGA-B63

13 mm

2147483648 bit

FLASH

16

1

2K

63

134217728 words

128M

ASYNCHRONOUS

70 Cel

0 Cel

128MX16

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1K

PARALLEL

260

1.8

1.8

Not Qualified

YES

1 mm

64K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

30

NO

SLC NAND TYPE

10.5 mm

MT29F4G08ABBDAHC:D by Micron Technology

MT29F4G08ABBDAHC:D

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Terminal Form: BALL;

25 ns

YES

NO

R-PBGA-B63

13 mm

4294967296 bit

FLASH

8

1

4K

63

536870912 words

512M

ASYNCHRONOUS

70 Cel

0 Cel

512MX8

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

2K

PARALLEL

260

1.8

Not Qualified

YES

1 mm

128K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

30

NO

SLC NAND TYPE

10.5 mm

MT29F4G16ABADAH4-IT:D by Micron Technology

MT29F4G16ABADAH4-IT:D

Micron Technology

MT29F4G16ABADAH4-IT:D by Micron Technology is a 256MX16 SLC NAND flash memory with 3.3V supply, 1K page size, and 64K sector size. It operates in industrial temperatures (-40 to 85 °C) and has a parallel interface. Ideal for applications requiring fast access times and high memory density.

25 ns

YES

NO

R-PBGA-B63

11 mm

4294967296 bit

FLASH

16

1

4K

63

268435456 words

256M

ASYNCHRONOUS

85 Cel

-40 Cel

256MX16

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1K

PARALLEL

260

3.3

Not Qualified

YES

1 mm

64K

.0001 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

30

NO

SLC NAND TYPE

9 mm

MT29F4G16ABADAH4:D by Micron Technology

MT29F4G16ABADAH4:D

Micron Technology

Micron Technology's MT29F4G16ABADAH4:D is a 256MX16 SLC NAND flash memory with 3.3V supply, 1K page size, and 64K sector size. It operates in asynchronous mode with a max access time of 25ns. Ideal for commercial applications requiring fast data storage and retrieval in compact devices.

25 ns

YES

NO

R-PBGA-B63

11 mm

4294967296 bit

FLASH

16

1

4K

63

268435456 words

256M

ASYNCHRONOUS

70 Cel

0 Cel

256MX16

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1K

PARALLEL

260

3.3

Not Qualified

YES

1 mm

64K

.0001 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

30

NO

SLC NAND TYPE

9 mm

MT29F4G16ABADAWP-IT:D by Micron Technology

MT29F4G16ABADAWP-IT:D

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Memory Width: 16;

25 ns

YES

NO

R-PDSO-G48

18.4 mm

4294967296 bit

FLASH

16

1

4K

48

268435456 words

256M

ASYNCHRONOUS

85 Cel

-40 Cel

256MX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

1K

PARALLEL

260

3.3

3.3

Not Qualified

YES

1.2 mm

64K

.0001 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

30

NO

SLC NAND TYPE

12 mm

MT29F4G16ABADAWP:D by Micron Technology

MT29F4G16ABADAWP:D

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Organization: 256MX16;

25 ns

YES

NO

R-PDSO-G48

18.4 mm

4294967296 bit

FLASH

16

1

4K

48

268435456 words

256M

ASYNCHRONOUS

70 Cel

0 Cel

256MX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

1K

PARALLEL

260

3.3

Not Qualified

YES

1.2 mm

64K

.0001 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

GULL WING

.5 mm

DUAL

30

NO

SLC NAND TYPE

12 mm

MT29F4G16ABBDAH4:D by Micron Technology

MT29F4G16ABBDAH4:D

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Memory Density: 4294967296 bit;

25 ns

YES

NO

R-PBGA-B63

e1

11 mm

4294967296 bit

FLASH

16

1

4K

63

268435456 words

256M

ASYNCHRONOUS

70 Cel

0 Cel

256MX16

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1K

PARALLEL

1.8

Not Qualified

YES

1 mm

64K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

9 mm

MT29F4G16ABBDAHC-IT:D by Micron Technology

MT29F4G16ABBDAHC-IT:D

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Access Time: 25 ns;

25 ns

YES

NO

R-PBGA-B63

13 mm

4294967296 bit

FLASH

16

1

4K

63

268435456 words

256M

ASYNCHRONOUS

85 Cel

-40 Cel

256MX16

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1K

PARALLEL

NOT SPECIFIED

1.8

Not Qualified

YES

1 mm

64K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

NO

SLC NAND TYPE

10.5 mm

MT29F4G16ABBDAHC:D by Micron Technology

MT29F4G16ABBDAHC:D

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Ready or Busy: YES;

25 ns

YES

NO

R-PBGA-B63

13 mm

4294967296 bit

FLASH

16

1

4K

63

268435456 words

256M

ASYNCHRONOUS

70 Cel

0 Cel

256MX16

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1K

PARALLEL

260

1.8

Not Qualified

YES

1 mm

64K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

30

NO

SLC NAND TYPE

10.5 mm

MT29F8G08ADBDAH4-IT:D by Micron Technology

MT29F8G08ADBDAH4-IT:D

Micron Technology

MT29F8G08ADBDAH4-IT:D by Micron Technology is a 1.8V SLC NAND flash memory with 1GX8 organization, operating in industrial temperature range. Featuring 2K word page size and 128K word sector size, it offers fast access time of 25ns for applications requiring high-speed data storage and retrieval. With a low standby current of 0.00005A, it is suitable for power-sensitive devices.

25 ns

YES

NO

R-PBGA-B63

e1

11 mm

8589934592 bit

FLASH

8

1

8K

63

1073741824 words

1G

ASYNCHRONOUS

85 Cel

-40 Cel

1GX8

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

2K

PARALLEL

1.8

Not Qualified

YES

1 mm

128K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

9 mm

MT29F8G08ADBDAH4:D by Micron Technology

MT29F8G08ADBDAH4:D

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Minimum Operating Temperature: 0 Cel;

25 ns

YES

NO

R-PBGA-B63

11 mm

8589934592 bit

FLASH

8

1

8K

63

1073741824 words

1G

ASYNCHRONOUS

70 Cel

0 Cel

1GX8

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

2K

PARALLEL

260

1.8

Not Qualified

YES

1 mm

128K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

30

NO

SLC NAND TYPE

9 mm

MT29F8G16ADADAH4-IT:D by Micron Technology

MT29F8G16ADADAH4-IT:D

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Programming Voltage (V): 3.3;

25 ns

YES

NO

R-PBGA-B63

11 mm

8589934592 bit

FLASH

16

1

8K

63

536870912 words

512M

ASYNCHRONOUS

85 Cel

-40 Cel

512MX16

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1K

PARALLEL

260

3.3

3.3

Not Qualified

YES

1 mm

64K

.0001 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

30

NO

SLC NAND TYPE

9 mm

MT29F8G16ADBDAH4-IT:D by Micron Technology

MT29F8G16ADBDAH4-IT:D

Micron Technology

MT29F8G16ADBDAH4-IT:D by Micron is a 512MX16 SLC NAND flash memory with 1.8V supply, 85°C max temp, and 25ns access time. Ideal for industrial applications requiring fast, reliable data storage in a compact GRID ARRAY package.

25 ns

YES

NO

R-PBGA-B63

11 mm

8589934592 bit

FLASH

16

1

8K

63

536870912 words

512M

ASYNCHRONOUS

85 Cel

-40 Cel

512MX16

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1K

PARALLEL

260

1.8

Not Qualified

YES

1 mm

64K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

30

NO

SLC NAND TYPE

9 mm

PC28F320J3F75B by Micron Technology

PC28F320J3F75B

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Memory Density: 33554432 bit;

75 ns

8

YES

YES

NO

R-PBGA-B64

13 mm

33554432 bit

FLASH

16

1

32

64

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

4/8

PARALLEL

260

3/3.3

3

Not Qualified

YES

1.2 mm

128K

.00012 Amp

Flash Memories

80 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

30

NO

NOR TYPE

10 mm

N25Q512A13GSFH0E by Micron Technology

N25Q512A13GSFH0E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 16; Package Code: SOP; Package Shape: RECTANGULAR; Width: 7.5 mm;

108 MHz

20

100000 Write/Erase Cycles

R-PDSO-G16

10.3 mm

536870912 bit

FLASH

8

1

16

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

SOP

SOP16,.4

RECTANGULAR

SMALL OUTLINE

SERIAL

2.5 mm

SPI

.0005 Amp

15 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOR TYPE

7.5 mm

HARDWARE/SOFTWARE

N25Q512A83G12A0F by Micron Technology

N25Q512A83G12A0F

Micron Technology

FLASH; Temperature Grade: AUTOMOTIVE; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Terminal Form: BALL;

108 MHz

R-PBGA-B24

8 mm

536870912 bit

FLASH

1

1

24

536870912 words

512M

SYNCHRONOUS

125 Cel

-40 Cel

512MX1

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

AUTOMOTIVE

BALL

1 mm

BOTTOM

NOR TYPE

6 mm

N25Q512A83G12H0F by Micron Technology

N25Q512A83G12H0F

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Memory Width: 1;

108 MHz

R-PBGA-B24

8 mm

536870912 bit

FLASH

1

1

24

536870912 words

512M

SYNCHRONOUS

85 Cel

-40 Cel

512MX1

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOR TYPE

6 mm

N25Q032A13E1240E by Micron Technology

N25Q032A13E1240E

Micron Technology

Micron Technology's N25Q032A13E1240E is a NOR type Flash Memory with 32Mx1 organization, operating at 108MHz. It has a max supply voltage of 3.6V and offers 100000 Write/Erase cycles endurance. Ideal for industrial applications requiring high-speed synchronous operation in compact devices.

108 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

33554432 bit

FLASH

1

1

24

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX1

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

3/3.3

3

Not Qualified

1.2 mm

SPI

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NOR TYPE

6 mm

HARDWARE/SOFTWARE

N25Q128A11EF740E by Micron Technology

N25Q128A11EF740E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: HVSON; Package Shape: RECTANGULAR; Length: 6 mm;

108 MHz

R-PDSO-N8

6 mm

134217728 bit

FLASH

1

1

8

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX1

PLASTIC/EPOXY

HVSON

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

NOT SPECIFIED

1.8

.9 mm

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

NO LEAD

1.27 mm

DUAL

NOT SPECIFIED

NOR TYPE

5 mm

N25Q128A31EF840E by Micron Technology

N25Q128A31EF840E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: HVSON; Package Shape: RECTANGULAR; Programming Voltage (V): 1.8;

108 MHz

R-PDSO-N8

8 mm

134217728 bit

FLASH

1

1

8

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX1

PLASTIC/EPOXY

HVSON

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

1.8

1 mm

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

NO LEAD

1.27 mm

DUAL

NOR TYPE

6 mm

M25P16-VMF6PBA by Micron Technology

M25P16-VMF6PBA

Micron Technology

M25P16-VMF6PBA by Micron Technology is a 2MX8 NOR type flash memory with 16777216 bit density. It operates at 75 MHz clock frequency, has 100000 write/erase cycles endurance, and uses SPI serial bus. Ideal for industrial applications requiring reliable data storage with low power consumption.

75 MHz

20

100000 Write/Erase Cycles

R-PDSO-G16

10.3 mm

16777216 bit

FLASH

8

1

16

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX8

PLASTIC/EPOXY

SOP

SOP16,.4

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3/3.3

2.7

Not Qualified

2.3 mm

SPI

.00001 Amp

Flash Memories

15 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

30

NOR TYPE

7.5 mm

HARDWARE/SOFTWARE

M25P16-VMN3YPB by Micron Technology

M25P16-VMN3YPB

Micron Technology

FLASH; Temperature Grade: AUTOMOTIVE; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Peak Reflow Temperature (C): NOT SPECIFIED;

75 MHz

20

100000 Write/Erase Cycles

R-PDSO-G8

4.9 mm

16777216 bit

FLASH

8

1

8

2097152 words

2M

SYNCHRONOUS

125 Cel

-40 Cel

2MX8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

NOT SPECIFIED

3/3.3

2.7

Not Qualified

1.75 mm

SPI

.0001 Amp

Flash Memories

15 mA

3.6 V

2.7 V

3

YES

CMOS

AUTOMOTIVE

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

NOR TYPE

3.9 mm

HARDWARE/SOFTWARE

M25P40-VMC6GB by Micron Technology

M25P40-VMC6GB

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SON; Package Shape: RECTANGULAR; Technology: CMOS;

50 MHz

20

100000 Write/Erase Cycles

R-PDSO-N8

4194304 bit

FLASH

8

8

524288 words

512K

85 Cel

-40 Cel

512KX8

PLASTIC/EPOXY

SON

SOLCC8,.12,32

RECTANGULAR

SMALL OUTLINE

SERIAL

260

2.5/3.3

2.7

Not Qualified

SPI

.00001 Amp

Flash Memories

15 mA

YES

CMOS

INDUSTRIAL

NO LEAD

.8 mm

DUAL

30

NOR TYPE

HARDWARE/SOFTWARE

M25P40-VMN6PBA by Micron Technology

M25P40-VMN6PBA

Micron Technology

M25P40-VMN6PBA by Micron Technology is a NOR type Flash Memory with 512Kx8 organization, SPI serial bus type, and 50 MHz clock frequency. It is used in industrial applications for storing data securely with 100000 write/erase cycles endurance.

50 MHz

20

100000 Write/Erase Cycles

R-PDSO-G8

4194304 bit

FLASH

8

8

524288 words

512K

85 Cel

-40 Cel

512KX8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

260

2.5/3.3

2.7

Not Qualified

SPI

.00001 Amp

Flash Memories

15 mA

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

30

NOR TYPE

HARDWARE/SOFTWARE

M29W640GB7AN6E by Micron Technology

M29W640GB7AN6E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSSOP; Package Shape: RECTANGULAR; Maximum Access Time: 70 ns;

70 ns

8

BOTTOM

R-PDSO-G48

e3

18.4 mm

67108864 bit

FLASH

16

1

48

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

NOR TYPE

12 mm

MX66L51235FMI-10G by Macronix

MX66L51235FMI-10G

Macronix

Macronix MX66L51235FMI-10G is a 128MX4 NOR flash memory with 104 MHz clock frequency, SPI serial bus type, and 100K write/erase cycles. Ideal for industrial applications requiring high endurance and reliable data storage in a compact 10.3mm x 7.52mm package.

ALSO IT CAN BE CONFIGURED AS 512M X 1 BIT

2

104 MHz

20

100000 Write/Erase Cycles

R-PDSO-G16

e3

10.3 mm

536870912 bit

FLASH

4

3

1

16

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX4

PLASTIC/EPOXY

SOP

SOP16,.4

RECTANGULAR

SMALL OUTLINE

SERIAL

3/3.3

3

Not Qualified

2.65 mm

SPI

.00004 Amp

Flash Memories

40 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

NOR TYPE

7.52 mm

HARDWARE/SOFTWARE

MX66L51235FXDI-10G by Macronix

MX66L51235FXDI-10G

Macronix

Macronix's MX66L51235FXDI-10G is a 128MX4 NOR flash memory with 536870912 bit density. Operating at 104 MHz, it offers 100000 Write/Erase Cycles endurance and SPI serial bus interface. Ideal for industrial applications requiring reliable, high-speed data storage in a compact GRID ARRAY package.

ALSO IT CAN BE CONFIGURED AS 512M X 1 BIT

2

104 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

8 mm

536870912 bit

FLASH

4

1

24

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX4

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

NOT SPECIFIED

3/3.3

3

Not Qualified

1.2 mm

SPI

.00004 Amp

Flash Memories

40 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

NOR TYPE

6 mm

HARDWARE/SOFTWARE

M25P10-AVMN6PYA by Micron Technology

M25P10-AVMN6PYA

Micron Technology

Micron Technology's M25P10-AVMN6PYA is a 128Kx8 NOR Flash Memory with 1048576-bit memory density. Operating at up to 50MHz, it supports synchronous mode and has a programming voltage of 2.7V. Ideal for industrial applications requiring reliable data storage in temperatures ranging from -40°C to 85°C.

50 MHz

R-PDSO-G8

1048576 bit

FLASH

8

1

8

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

SERIAL

260

2.7

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

GULL WING

DUAL

30

NOR TYPE

M29W512GH7AN6E by Micron Technology

M29W512GH7AN6E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Alternate Memory Width: 8;

80 ns

8

R-PDSO-G56

e3

18.4 mm

536870912 bit

FLASH

16

1

56

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

2.7

AEC-Q100

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

14 mm

N25Q512A13G1241E by Micron Technology

N25Q512A13G1241E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Organization: 512MX1;

108 MHz

R-PBGA-B24

e1

8 mm

536870912 bit

FLASH

1

1

24

536870912 words

512M

SYNCHRONOUS

85 Cel

-40 Cel

512MX1

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

1.8

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NOR TYPE

6 mm

MT29F2G08AADWP-ET:DTR by Micron Technology

MT29F2G08AADWP-ET:DTR

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

R-PDSO-G48

e3

18.4 mm

2147483648 bit

FLASH

8

1

48

268435456 words

256M

ASYNCHRONOUS

85 Cel

-40 Cel

256MX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3.3

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

SLC NAND TYPE

W25Q16DVSNIG by Winbond Electronics

W25Q16DVSNIG

Winbond Electronics

W25Q16DVSNIG by Winbond Electronics is a NOR flash memory with 2MX8 organization, 104 MHz clock frequency, and SPI serial bus type. It operates at temperatures ranging from -40 to 85 °C and has a max supply voltage of 3.6 V. Ideal for industrial applications requiring high endurance and fast data transfer speeds.

104 MHz

20

100000 Write/Erase Cycles

R-PDSO-G8

5 mm

16777216 bit

FLASH

8

1

8

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

NOT SPECIFIED

3/3.3

2.7

Not Qualified

1.75 mm

SPI

.000005 Amp

Flash Memories

25 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

NOR TYPE

4 mm

HARDWARE/SOFTWARE

W25Q256FVEIG by Winbond Electronics

W25Q256FVEIG

Winbond Electronics

W25Q256FVEIG by Winbond Electronics is a 256MX1 NOR flash memory with a max clock frequency of 80 MHz. It operates in synchronous mode and has a temperature grade of industrial. It is commonly used in applications that require high-speed data storage and retrieval, such as automotive systems and industrial control devices.

80 MHz

20

100000 Write/Erase Cycles

R-PDSO-N8

8 mm

268435456 bit

FLASH

1

1

8

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX1

PLASTIC/EPOXY

HVSON

SOLCC8,.3

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

3/3.3

3

Not Qualified

.8 mm

SPI

.000025 Amp

Flash Memories

25 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

NO LEAD

1.27 mm

DUAL

NOR TYPE

6 mm

HARDWARE/SOFTWARE

W25Q64FVZPIG by Winbond Electronics

W25Q64FVZPIG

Winbond Electronics

Winbond Electronics' W25Q64FVZPIG is an 8MX8 flash memory with SPI serial bus, operating at up to 104 MHz. It offers a memory density of 67108864 bits and can withstand industrial temperature grades. Ideal for applications requiring fast data transfer and reliable storage in compact devices.

1

104 MHz

20

R-PDSO-N8

6 mm

67108864 bit

FLASH

8

1

8

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX8

3-STATE

PLASTIC/EPOXY

HSON

SOLCC8,.2

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG

SERIAL

Not Qualified

.8 mm

SPI

.00005 Amp

3.6 V

3 V

YES

CMOS

INDUSTRIAL

NO LEAD

1.27 mm

DUAL

5 mm

HARDWARE/SOFTWARE

JS28F640P33BF70A by Micron Technology

JS28F640P33BF70A

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; No. of Words Code: 4M;

70 ns

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

BOTTOM

YES

YES

NO

R-PDSO-G56

e3

18.4 mm

67108864 bit

FLASH

16

1

4,63

56

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8

PARALLEL

2.5/3.3

3

Not Qualified

1.2 mm

16K,64K

.002 Amp

Flash Memories

28 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

NO

NOR TYPE

14 mm

MT29F1G08ABBDAH4-IT:DTR by Micron Technology

MT29F1G08ABBDAH4-IT:DTR

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Operating Mode: ASYNCHRONOUS;

25 ns

R-PBGA-B63

e1

11 mm

1073741824 bit

FLASH

8

1

63

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

SLC NAND TYPE

9 mm

MT29F2G08ABBFAH4-IT:F by Micron Technology

MT29F2G08ABBFAH4-IT:F

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; JESD-609 Code: e1;

R-PBGA-B63

e1

11 mm

2147483648 bit

FLASH

8

1

63

268435456 words

256M

ASYNCHRONOUS

85 Cel

-40 Cel

256MX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

1.8

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

SLC NAND TYPE

9 mm