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JS28F128P33BF70A

Micron Technology

JS28F128P33BF70A by Micron Technology

Micron Technology's JS28F128P33BF70A is a NOR type Flash Memory with 8MX16 organization, operating at 3V. It features a small outline package, synchronous mode, and industrial temperature grade. Ideal for applications requiring fast access times and high memory density in industrial settings.

Median Price

$6.857

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Flip Electronics

USA . 6,397 parts In-Stock

1+ parts

$6.857

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6,397

$6.857

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Cyclops Electronics Ltd

UK . 50,098 parts In-Stock

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50,098

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Chip Stock

USA . 30,370 parts In-Stock

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30,370

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Vyrian

USA . 5,952 parts In-Stock

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5,952

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Digiode

USA . 1,762 parts In-Stock

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1,762

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Sternenhof Electronics

Switzerland . 592 parts In-Stock

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592

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Nova Conductors

Japan . 50 parts In-Stock

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50

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Speed Components Ltd

Israel . 5 parts In-Stock

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Andel Nordic

Denmark . 262 parts In-Stock

1+ parts

$3.996

100+ parts

-

1k+ parts

$3.836

10k+ parts

$3.836

262

$3.996

-

$3.836

$3.836

Component Stockers USA

USA . 3,507 parts In-Stock

1+ parts

$6.490

100+ parts

$6.160

1k+ parts

$5.970

10k+ parts

-

3,507

$6.490

$6.160

$5.970

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AZTECH Wire

Italy . 166 parts In-Stock

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$17.180

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166

$17.180

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Ampacity Inc.

Singapore . 232 parts In-Stock

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$28.000

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232

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Authorized Procurement Solutions

USA . 25,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 7,208 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,805 parts In-Stock

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Perfect Parts

USA . 2,401 parts In-Stock

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Aranea Global

USA . 2,000 parts In-Stock

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2,000

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GreenTree Electronics

Israel . 1,728 parts In-Stock

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1,728

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Kepictronics

USA . 1,100 parts In-Stock

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Corphita

USA . 438 parts In-Stock

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Overview

Unleash the power of reliable and high-quality flash memory with Micron Technology's JS28F128P33BF70A. Perfect for industrial applications, this NOR type memory offers a seamless user interface and a wide temperature range, ensuring optimal performance even in challenging environments. With a compact design and low power consumption, this flash memory is a valuable addition to any project, providing fast access times and ample storage capacity. Trust Micron Technology to deliver cutting-edge technology that meets your needs for efficiency and reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides a good balance between durability and cost-effectiveness, making the product reliable and affordable.

Operating Mode: SYNCHRONOUS

Synchronous operation helps in achieving faster data transfer speeds and improved overall performance.

Nominal Supply Voltage / Vsup (V): 3

Having a consistent supply voltage of 3V ensures stable operation and compatibility with a wide range of devices.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, the product can withstand harsh environmental conditions and ensure reliability in various applications.

Technology: CMOS

CMOS technology offers low power consumption, high noise immunity, and compatibility with a wide range of devices, making the product energy-efficient and versatile.

Memory IC Type: FLASH

Being a flash memory IC, the product offers non-volatile storage, fast read/write speeds, and high reliability, making it suitable for a wide range of applications.

Technical Specifications

Flash Memory JS28F128P33BF70A attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

20 ns

Boot Block:

BOTTOM

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PDSO-G56

Length:

18.4 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Sectors/Size:

4,127

No. of Terminals:

56

No. of Words:

8388608 words

No. of Words Code:

8M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP56,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Page Size (words):

8

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

2.5/3.3

Programming Voltage (V):

3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Sector Size (Words):

16K,64K

Maximum Standby Current:

.002 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

28 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.3 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Toggle Bit:

NO

Type:

NOR TYPE

Width:

14 mm

Trade Compliance

JS28F128P33BF70A Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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