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M25P10-AVMN6PYA

Micron Technology

M25P10-AVMN6PYA by Micron Technology

Micron Technology's M25P10-AVMN6PYA is a 128Kx8 NOR Flash Memory with 1048576-bit memory density. Operating at up to 50MHz, it supports synchronous mode and has a programming voltage of 2.7V. Ideal for industrial applications requiring reliable data storage in temperatures ranging from -40°C to 85°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Chip Stock

USA . 24,100 parts In-Stock

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Vyrian

USA . 5,936 parts In-Stock

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Digiode

USA . 1,317 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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AZTECH Wire

Italy . 194 parts In-Stock

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$16.686

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Ampacity Inc.

Singapore . 1,583 parts In-Stock

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$22.000

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Component Stockers USA

USA . 579 parts In-Stock

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$99.990

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A-Z Elektronik GmbH

Germany . 5,553 parts In-Stock

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Argo Parts USA

USA . 3,926 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,702 parts In-Stock

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Continental Prestige Electronics

USA . 2,425 parts In-Stock

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Infinite Electronics LLP (Excess)

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Bastille Electronics

Australia . 700 parts In-Stock

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Corphita

USA . 613 parts In-Stock

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Microchip USA

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Kepictronics

USA . 163 parts In-Stock

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Overview

Discover the Micron Technology M25P10-AVMN6PYA, a premium Flash Memory device that offers unparalleled quality and reliability in its category. Manufactured by Micron Technology, a trusted name in the industry, this product is designed to exceed expectations. With its advanced features and versatile applications, this Flash Memory is perfect for various industrial needs. Experience the value and benefits it brings, from its high performance to its durability, making it a smart choice for any project. Trust Micron Technology for top-notch products that deliver exceptional results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this flash memory product lightweight and durable.

Surface Mount: YES

The surface mount feature allows for easy and secure installation on circuit boards, making this product convenient for electronic assembly.

Package Shape: RECTANGULAR

The rectangular package shape provides a compact design, making this flash memory suitable for space-constrained applications.

Operating Mode: SYNCHRONOUS

The synchronous operating mode ensures reliable and efficient data transfer, making this flash memory ideal for high-performance systems.

Nominal Supply Voltage: 3V

The 3V nominal supply voltage provides efficient power consumption, making this flash memory cost-effective for long-term use.

No. of Terminals: 8

With 8 terminals, this flash memory offers versatile connectivity options, making it compatible with a wide range of devices.

Package Style: SMALL OUTLINE

The small outline package style saves space on circuit boards, making this flash memory a good choice for compact devices.

Maximum Operating Temperature: 85°C

With a maximum operating temperature of 85°C, this flash memory can withstand high heat environments, ensuring reliable performance in various conditions.

Organization: 128KX8

The organization of 128KX8 provides ample storage capacity, making this flash memory suitable for storing large amounts of data.

Minimum Operating Temperature: -40°C

The minimum operating temperature of -40°C allows this flash memory to function in cold environments, ensuring consistent performance in extreme conditions.

Technical Specifications

Flash Memory M25P10-AVMN6PYA attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

50 MHz

JESD-30 Code:

R-PDSO-G8

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

8

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

2.7

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.3 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Type:

NOR TYPE

Trade Compliance

M25P10-AVMN6PYA Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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