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MX66L51235FXDI-10G

Macronix

MX66L51235FXDI-10G by Macronix

Macronix's MX66L51235FXDI-10G is a 128MX4 NOR flash memory with 536870912 bit density. Operating at 104 MHz, it offers 100000 Write/Erase Cycles endurance and SPI serial bus interface. Ideal for industrial applications requiring reliable, high-speed data storage in a compact GRID ARRAY package.

Median Price

$8.582

Lifecycle Status

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Arrow

USA . 444 parts In-Stock

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$8.328

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$7.953

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Verical

USA . 444 parts In-Stock

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$8.835

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Nova Conductors

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Vyrian

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NAC Semi

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Chip Stock

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IBS Electronics

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AZTECH Wire

Italy . 319 parts In-Stock

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Continental Prestige Electronics

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Netroflash

USA . 500 parts In-Stock

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Perfect Parts

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Overview

Unlock the potential of your devices with the MX66L51235FXDI-10G Flash Memory by Macronix. Known for its unparalleled quality and reliability, Macronix is a trusted manufacturer in the industry. This Flash Memory is perfect for a wide range of applications, offering high performance and seamless operation. With its cutting-edge technology and industrial-grade endurance, this product ensures that your data is secure and easily accessible. Upgrade your systems with Macronix and experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the flash memory, making it suitable for a variety of applications.

Surface Mount: YES

This feature allows for easy integration onto circuit boards, saving space and enabling efficient installation.

Package Shape: RECTANGULAR

The rectangular shape of the package offers a standardized form factor for compatibility with various systems and devices.

Operating Mode: SYNCHRONOUS

The synchronous operation ensures data is transmitted efficiently and accurately, enhancing overall performance.

Nominal Supply Voltage / Vsup (V): 3

The stable supply voltage of 3V ensures reliable and consistent operation of the flash memory in different conditions.

Power Supplies (V): 3/3.3

The dual power supply options provide flexibility and compatibility with different voltage requirements in electronic systems.

No. of Terminals: 24

With a high number of terminals, this flash memory chip offers versatile connectivity options for seamless integration.

Package Style (Meter): GRID ARRAY, THIN PROFILE

The thin profile of the grid array package style allows for space-saving designs in compact electronic devices.

Alternate Memory Width: 2

The alternate memory width of 2 enhances data processing speed and efficiency for improved performance.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature tolerance makes this flash memory suitable for industrial and harsh environments.

Organization: 128MX4

The organized structure of the flash memory chip ensures efficient data storage and retrieval for optimized performance.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature tolerance ensures reliable operation even in extreme cold conditions.

Terminal Position: BOTTOM

The bottom terminal position facilitates easy installation and connectivity with other components in the circuit.

Write Protection: HARDWARE/SOFTWARE

The write protection feature ensures data security and prevents accidental data loss or corruption.

Maximum Seated Height: 1.2 mm

The low profile maximum seated height enables flexible mounting options and space-efficient designs.

Maximum Clock Frequency (fCLK): 104 MHz

The high clock frequency allows for fast data transfer rates and responsive performance.

Width: 6 mm

The compact width of the flash memory chip allows for easy integration into various electronic systems with limited space.

Minimum Supply Voltage (Vsup): 2.7 V

The low minimum supply voltage ensures compatibility with a wide range of electronic devices and systems.

Type: NOR TYPE

The NOR type flash memory offers reliable and fast read/write speeds for efficient data storage and retrieval.

Length: 8 mm

The moderate length of the flash memory chip provides a balance between compact size and functionality for diverse applications.

Programming Voltage (V): 3

The standard programming voltage of 3V simplifies the integration and operation of the flash memory chip.

Temperature Grade: INDUSTRIAL

The industrial-grade temperature tolerance makes this flash memory chip suitable for rugged and demanding environments.

Technology: CMOS

The CMOS technology used in this flash memory chip ensures low power consumption and high performance.

Parallel or Serial: SERIAL

The serial interface enables efficient data transfer and integration with other serial devices for streamlined operation.

Terminal Form: BALL

The ball terminal form provides sturdy connections and ensures reliable data transmission in various electronic systems.

Maximum Supply Current: 40 mA

The moderate maximum supply current ensures efficient power usage and optimal performance of the flash memory chip.

No. of Words: 134217728 words

The high number of words capacity allows for extensive data storage and processing capabilities in the flash memory chip.

Memory Width: 4

The wide memory width of 4 enhances data processing speed and efficiency for improved performance.

Minimum Data Retention Time: 20

The minimum data retention time of 20 ensures that stored data is preserved reliably over extended periods.

Terminal Pitch: 1 mm

The small terminal pitch facilitates precise connections and enables high-density mounting of the flash memory chip.

No. of Words Code: 128M

The code for the number of words capacity provides easy identification and compatibility with various systems.

Maximum Supply Voltage (Vsup): 3.6 V

The maximum supply voltage tolerance of 3.6V ensures the flash memory chip can operate safely within its specified voltage range.

Endurance: 100000 Write/Erase Cycles

The high endurance rating of 100,000 write/erase cycles ensures long-lasting performance and durability for the flash memory chip.

Serial Bus Type: SPI

The SPI serial bus type offers fast data transmission rates and compatibility with a wide range of devices and systems.

Memory Density: 536870912 bit

The high memory density provides ample storage capacity for large amounts of data in the flash memory chip.

Memory IC Type: FLASH

The flash memory IC type offers fast read/write speeds and reliable data storage for efficient performance.

Maximum Standby Current: 0.00004 Amp

The low maximum standby current ensures minimal power consumption when the flash memory chip is not in use.

Technical Specifications

Flash Memory MX66L51235FXDI-10G attributes and parameters. Explore more Flash Memory devices from Macronix

Specs

Additional Features:

ALSO IT CAN BE CONFIGURED AS 512M X 1 BIT

Alternate Memory Width:

2

Maximum Clock Frequency (fCLK):

104 MHz

Minimum Data Retention Time:

20

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PBGA-B24

Length:

8 mm

Memory Density:

536870912 bit

Memory IC Type:

Memory Width:

4

No. of Functions:

1

No. of Terminals:

24

No. of Words:

134217728 words

No. of Words Code:

128M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128MX4

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA24,5X5,40

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3/3.3

Programming Voltage (V):

3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.00004 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

40 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Type:

NOR TYPE

Width:

6 mm

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

MX66L51235FXDI-10G Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Macronix

Macronix, a leading integrated device manufacturer in the Non-Volatile Memory (NVM) market, provides a full range of NOR Flash, NAND Flash, and ROM products. With its world-class R&D and manufacturing capability, Macronix continues to deliver high-quality, innovative and performance driven products to its customers in the consumer, communication, computing, industrial, automotive, networking and other segment markets. Macronix was established in 1989 in the Science Park, Hsinchu, Taiwan. Since its inception, Macronix is dedicated to developing top-notch home-grown technologies and improving its manufacturing capability to offer its customers high quality products and services. We have successfully established remarkable strategic alliances and long-lasting relationships with first tier world-class companies. Macronix has also been adhering to high standards of corporate governance, enhancing shareholders' rights and advocating social responsibilities. The Corporate Governance Association awarded Macronix with the CG6002 certification. Macronix was the first semiconductor manufacturer certified with Social Accountability International Standard (SA 8000: 2001) in Hsinchu Science Park.

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