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RECTANGULAR Flash Memory 1,448

Flash Memory
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Type Width Maximum Write Cycle Time (tWC) Write Protection
MT29F32G08ABCABH1-10Z:A by Micron Technology

MT29F32G08ABCABH1-10Z:A

Micron Technology

Micron Technology's MT29F32G08ABCABH1-10Z:A is a 4GX8 SLC NAND flash memory with 4294967296 words capacity. It operates at temperatures from 0 to 70°C, with a max access time of 20 ns. Ideal for commercial applications requiring high memory density and low standby current consumption.

20 ns

YES

NO

R-PBGA-B100

34359738368 bit

FLASH

8

4K

100

4294967296 words

4G

70 Cel

0 Cel

4GX8

PLASTIC/EPOXY

BGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY

8K

PARALLEL

1.8,3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

MT29F64G08AFAAAWP-Z:A by Micron Technology

MT29F64G08AFAAAWP-Z:A

Micron Technology

Micron Technology's MT29F64G08AFAAAWP-Z:A is a 3V/3.3V SLC NAND Flash Memory with 8GX8 organization, 8K sectors, and 1M sector size. It operates b/w 0-70°C, has a memory density of 68719476736 bits, and supports parallel interface. Ideal for commercial applications requiring fast access times and low standby current consumption.

20 ns

YES

NO

R-PDSO-G48

68719476736 bit

FLASH

8

8K

48

8589934592 words

8G

70 Cel

0 Cel

8GX8

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8K

PARALLEL

3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

COMMERCIAL

GULL WING

.5 mm

DUAL

NO

SLC NAND TYPE

MT29F64G08AECABH1-10ITZ:A by Micron Technology

MT29F64G08AECABH1-10ITZ:A

Micron Technology

MT29F64G08AECABH1-10ITZ:A by Micron Technology is an 8GX8 SLC NAND flash memory with 8K sectors. Operating at -40 to 85 °C, it has a memory density of 68719476736 bit and max access time of 20 ns. Ideal for industrial applications requiring fast, reliable data storage with low standby current consumption.

20 ns

YES

NO

R-PBGA-B100

68719476736 bit

FLASH

8

8K

100

8589934592 words

8G

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

BGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY

8K

PARALLEL

1.8,3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

MT29F64G08AECABH1-10Z:A by Micron Technology

MT29F64G08AECABH1-10Z:A

Micron Technology

MT29F64G08AECABH1-10Z:A by Micron Technology is a 8GX8 SLC NAND flash memory with 8K sectors and 1M word sector size. Operating at 0-70 °C, it has a max access time of 20 ns and consumes up to 50 mA current. Ideal for commercial applications requiring high memory density and fast data access.

20 ns

YES

NO

R-PBGA-B100

68719476736 bit

FLASH

8

8K

100

8589934592 words

8G

70 Cel

0 Cel

8GX8

PLASTIC/EPOXY

BGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY

8K

PARALLEL

1.8,3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

MT29F128G08AJAAAWP-Z:A by Micron Technology

MT29F128G08AJAAAWP-Z:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSSOP; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

20 ns

YES

NO

R-PDSO-G48

137438953472 bit

FLASH

8

16K

48

17179869184 words

16G

70 Cel

0 Cel

16GX8

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8K

PARALLEL

3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

COMMERCIAL

GULL WING

.5 mm

DUAL

NO

SLC NAND TYPE

MT29F128G08AKCABH2-10Z:A by Micron Technology

MT29F128G08AKCABH2-10Z:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: BGA; Package Shape: RECTANGULAR; Page Size (words): 8K;

20 ns

YES

NO

R-PBGA-B100

137438953472 bit

FLASH

8

16K

100

17179869184 words

16G

70 Cel

0 Cel

16GX8

PLASTIC/EPOXY

BGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY

8K

PARALLEL

1.8,3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

MT29F128G08AKCABH2-10ITZ:A by Micron Technology

MT29F128G08AKCABH2-10ITZ:A

Micron Technology

Micron Technology's MT29F128G08AKCABH2-10ITZ:A is a 16GX8 SLC NAND flash memory with 1M sector size and 8K page size. It operates at industrial temperature grade, with parallel interface and 100 terminals in a grid array package. Ideal for applications requiring high-speed data storage and retrieval.

20 ns

YES

NO

R-PBGA-B100

137438953472 bit

FLASH

8

16K

100

17179869184 words

16G

85 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

BGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY

8K

PARALLEL

1.8,3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

MT29F128G08AMCABH2-10ITZ:A by Micron Technology

MT29F128G08AMCABH2-10ITZ:A

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: BGA; Package Shape: RECTANGULAR; Power Supplies (V): 1.8,3/3.3;

20 ns

YES

NO

R-PBGA-B100

137438953472 bit

FLASH

8

16K

100

17179869184 words

16G

85 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

BGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY

8K

PARALLEL

260

1.8,3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

30

NO

SLC NAND TYPE

MT29F128G08AMCABH2-10Z:A by Micron Technology

MT29F128G08AMCABH2-10Z:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: BGA; Package Shape: RECTANGULAR; Maximum Standby Current: .00001 Amp;

20 ns

YES

NO

R-PBGA-B100

137438953472 bit

FLASH

8

16K

100

17179869184 words

16G

70 Cel

0 Cel

16GX8

PLASTIC/EPOXY

BGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY

8K

PARALLEL

1.8,3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

MT29F256G08AUCABH3-10ITZ:A by Micron Technology

MT29F256G08AUCABH3-10ITZ:A

Micron Technology

Micron Technology's MT29F256G08AUCABH3-10ITZ:A is a SLC NAND flash memory with 32K sectors, 8K page size, and 1M sector size. It operates at temperatures from -40 to 85°C and has a max access time of 20 ns. Ideal for industrial applications requiring high-density memory with low standby current.

20 ns

YES

NO

R-PBGA-B100

274877906944 bit

FLASH

32K

100

85 Cel

-40 Cel

PLASTIC/EPOXY

BGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY

8K

PARALLEL

1.8,3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

MT29F256G08AUCABH3-10Z:A by Micron Technology

MT29F256G08AUCABH3-10Z:A

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: BGA; Package Shape: RECTANGULAR; Maximum Standby Current: .00001 Amp;

20 ns

YES

NO

R-PBGA-B100

274877906944 bit

FLASH

32K

100

70 Cel

0 Cel

PLASTIC/EPOXY

BGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY

8K

PARALLEL

1.8,3/3.3

Not Qualified

YES

1M

.00001 Amp

Flash Memories

50 mA

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

NO

SLC NAND TYPE

MT29F2G08ABBFAH4:F by Micron Technology

MT29F2G08ABBFAH4:F

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 63; Package Code: FBGA; Package Shape: RECTANGULAR; Toggle Bit: NO;

25 ns

YES

NO

R-PBGA-B63

2147483648 bit

FLASH

8

2K

63

268435456 words

256M

70 Cel

0 Cel

256MX8

PLASTIC/EPOXY

FBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, FINE PITCH

2K

PARALLEL

1.8

Not Qualified

YES

128K

.00005 Amp

Flash Memories

20 mA

1.8

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

N25Q064A13E14D0E by Micron Technology

N25Q064A13E14D0E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: BGA; Package Shape: RECTANGULAR; Maximum Clock Frequency (fCLK): 108 MHz;

108 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

67108864 bit

FLASH

8

24

8388608 words

8M

85 Cel

-40 Cel

8MX8

PLASTIC/EPOXY

BGA

BGA24,4X6,40

RECTANGULAR

GRID ARRAY

SERIAL

3/3.3

Not Qualified

SPI

.0001 Amp

Flash Memories

20 mA

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOR TYPE

HARDWARE/SOFTWARE

M29W128GSH70N6E by Micron Technology

M29W128GSH70N6E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; No. of Sectors/Size: 128;

70 ns

8

YES

YES

YES

R-PDSO-G56

134217728 bit

FLASH

16

128

56

8388608 words

8M

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8/16

PARALLEL

3/3.3

Not Qualified

YES

128K

.0001 Amp

Flash Memories

20 mA

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

YES

NOR TYPE

M29W128GSL70N6E by Micron Technology

M29W128GSL70N6E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Maximum Standby Current: .0001 Amp;

70 ns

8

YES

YES

YES

R-PDSO-G56

134217728 bit

FLASH

16

128

56

8388608 words

8M

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8/16

PARALLEL

3/3.3

Not Qualified

YES

128K

.0001 Amp

Flash Memories

20 mA

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

YES

NOR TYPE

PC28F256P30TFE by Micron Technology

PC28F256P30TFE

Micron Technology

Micron Technology's PC28F256P30TFE is a 16Mx16 NOR flash memory with 1.8V supply, operating at -40 to 85°C. It features synchronous operation, 16K/64K sector sizes, and a common flash interface. Ideal for industrial applications requiring fast access times and low standby current.

100 ns

TOP

YES

YES

NO

R-PBGA-B64

e1

13 mm

268435456 bit

FLASH

16

1

4,255

64

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

1.8,1.8/3.3

1.8

Not Qualified

1.2 mm

16K,64K

.00021 Amp

Flash Memories

31 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

NO

NOR TYPE

10 mm

SST39VF3202C-70-4I-B3KE by Microchip Technology

SST39VF3202C-70-4I-B3KE

Microchip Technology

SST39VF3202C-70-4I-B3KE by Microchip: 2MX16 Flash Memory with 3V supply, 70ns access time. Ideal for industrial applications, offers 100K write/erase cycles and operates in asynchronous mode.

70 ns

TOP BOOT-BLOCK

TOP

YES

YES

YES

100

100000 Write/Erase Cycles

R-PBGA-B48

e1

8 mm

33554432 bit

FLASH

16

3

1

1

8,63

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

3/3.3

3

Not Qualified

YES

1.2 mm

4K,32K

.00005 Amp

Flash Memories

45 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

40

YES

NOR TYPE

6 mm

N25Q128A13B1240E by Micron Technology

N25Q128A13B1240E

Micron Technology

N25Q128A13B1240E by Micron Technology is a NOR type flash memory with 16MX8 organization and a memory density of 134217728 bits. It operates at a max clock frequency of 108 MHz and has a min data retention time of 20 years. This flash memory is commonly used in industrial applications for its high endurance of 100000 write/erase cycles.

BOTTOM

108 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

134217728 bit

FLASH

8

1

24

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

3/3.3

3

Not Qualified

1.2 mm

SPI

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NOR TYPE

6 mm

HARDWARE/SOFTWARE

N25Q128A13BF840E by Micron Technology

N25Q128A13BF840E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: HVSON; Package Shape: RECTANGULAR; Parallel or Serial: SERIAL;

BOTTOM

108 MHz

20

100000 Write/Erase Cycles

R-PDSO-N8

8 mm

134217728 bit

FLASH

8

1

8

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX8

PLASTIC/EPOXY

HVSON

SOLCC8,.3

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

3/3.3

3

Not Qualified

1 mm

SPI

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

NO LEAD

1.27 mm

DUAL

30

NOR TYPE

6 mm

HARDWARE/SOFTWARE

N25Q128A13BSF40G by Micron Technology

N25Q128A13BSF40G

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 16; Package Code: SOP; Package Shape: RECTANGULAR; No. of Words: 16777216 words;

BOTTOM

108 MHz

20

100000 Write/Erase Cycles

R-PDSO-G16

10.3 mm

134217728 bit

FLASH

8

1

16

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX8

PLASTIC/EPOXY

SOP

SOP16,.4

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3/3.3

3

Not Qualified

2.65 mm

SPI

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

30

NOR TYPE

7.5 mm

HARDWARE/SOFTWARE

N25Q128A13TF840E by Micron Technology

N25Q128A13TF840E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: HVSON; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 2.7 V;

TOP

108 MHz

20

100000 Write/Erase Cycles

R-PDSO-N8

8 mm

134217728 bit

FLASH

8

1

8

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX8

PLASTIC/EPOXY

HVSON

SOLCC8,.3

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

3/3.3

3

Not Qualified

1 mm

SPI

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

NO LEAD

1.27 mm

DUAL

30

NOR TYPE

6 mm

HARDWARE/SOFTWARE

N25Q128A13TSF40G by Micron Technology

N25Q128A13TSF40G

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 16; Package Code: SOP; Package Shape: RECTANGULAR; Boot Block: TOP;

TOP

108 MHz

20

100000 Write/Erase Cycles

R-PDSO-G16

10.3 mm

134217728 bit

FLASH

8

1

16

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX8

PLASTIC/EPOXY

SOP

SOP16,.4

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3/3.3

3

Not Qualified

2.65 mm

SPI

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

30

NOR TYPE

7.5 mm

HARDWARE/SOFTWARE

N25Q128A23B1240E by Micron Technology

N25Q128A23B1240E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Memory Width: 8;

BOTTOM

108 MHz

20

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

134217728 bit

FLASH

8

1

24

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX8

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

3/3.3

3

Not Qualified

1.2 mm

SPI

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NOR TYPE

6 mm

HARDWARE/SOFTWARE

N25Q128A23BF840E by Micron Technology

N25Q128A23BF840E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: HVSON; Package Shape: RECTANGULAR; No. of Words Code: 16M;

BOTTOM

108 MHz

20

100000 Write/Erase Cycles

R-PDSO-N8

8 mm

134217728 bit

FLASH

8

1

8

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX8

PLASTIC/EPOXY

HVSON

SOLCC8,.3

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

3/3.3

3

Not Qualified

1 mm

SPI

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

NO LEAD

1.27 mm

DUAL

30

NOR TYPE

6 mm

HARDWARE/SOFTWARE

N25Q128A23BSF40G by Micron Technology

N25Q128A23BSF40G

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 16; Package Code: SOP; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 2.7 V;

BOTTOM

108 MHz

20

100000 Write/Erase Cycles

R-PDSO-G16

10.3 mm

134217728 bit

FLASH

8

1

16

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX8

PLASTIC/EPOXY

SOP

SOP16,.4

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3/3.3

3

Not Qualified

2.65 mm

SPI

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

30

NOR TYPE

7.5 mm

HARDWARE/SOFTWARE

RC28F640P33TF60A by Micron Technology

RC28F640P33TF60A

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Power Supplies (V): 2.5/3.3;

60 ns

SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE

TOP

YES

YES

NO

R-PBGA-B64

e0

10 mm

67108864 bit

FLASH

16

1

4,63

64

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

8

PARALLEL

2.5/3.3

3

Not Qualified

1.2 mm

16K,64K

.002 Amp

Flash Memories

28 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

TIN LEAD SILVER

BALL

1 mm

BOTTOM

NO

NOR TYPE

8 mm

NAND512W3A2SN6E by Micron Technology

NAND512W3A2SN6E

Micron Technology

Micron's NAND512W3A2SN6E is a 64MX8 SLC NAND flash memory with 536870912-bit density. Operating at 3V, it has a temp range of -40 to 85°C and uses parallel interface with 0.5mm pitch. Ideal for industrial applications, this compact chip measures 18.4mm x 12mm x 1.2mm and features Ni/Pd/Au finish on dual terminals.

R-PDSO-G48

e4

18.4 mm

536870912 bit

FLASH

8

3

1

48

67108864 words

64M

ASYNCHRONOUS

85 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

260

3

Not Qualified

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

.5 mm

DUAL

30

SLC NAND TYPE

12 mm

JS28F128P30BF75A by Micron Technology

JS28F128P30BF75A

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 56; Package Code: TSSOP; Package Shape: RECTANGULAR; Minimum Operating Temperature: -40 Cel;

75 ns

BOTTOM

YES

YES

NO

R-PDSO-G56

e3

18.4 mm

134217728 bit

FLASH

16

1

4,127

56

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TSSOP

TSSOP56,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

8

PARALLEL

1.8,1.8/3.3

1.8

Not Qualified

1.2 mm

16K,64K

.000055 Amp

Flash Memories

50 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

NO

NOR TYPE

14 mm

PC28F256P30BFE by Micron Technology

PC28F256P30BFE

Micron Technology

Micron Technology's PC28F256P30BFE is a 16Mx16 NOR flash memory with 1.8V supply, operating at -40 to 85°C. Featuring synchronous mode, it has 4 sectors of 255 words each and supports common flash interface. Ideal for industrial applications requiring fast access time and low standby current.

100 ns

ASYNCHRONOUS READ MODE

BOTTOM

YES

YES

NO

R-PBGA-B64

e1

13 mm

268435456 bit

FLASH

16

1

4,255

64

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

1.8,1.8/3.3

1.8

Not Qualified

1.2 mm

16K,64K

.00021 Amp

Flash Memories

31 mA

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

NO

NOR TYPE

10 mm

MTFDCAE001SAF-1D1IT by Micron Technology

MTFDCAE001SAF-1D1IT

Micron Technology

FLASH MODULE; Temperature Grade: INDUSTRIAL; Package Code: XMA; Package Shape: RECTANGULAR; No. of Words Code: 1G; Minimum Operating Temperature: -40 Cel;

R-XXMA-X

36.9 mm

8589934592 bit

FLASH MODULE

8

1

1073741824 words

1G

ASYNCHRONOUS

85 Cel

-40 Cel

1GX8

UNSPECIFIED

XMA

RECTANGULAR

MICROELECTRONIC ASSEMBLY

SERIAL

5

9.7 mm

.06 Amp

120 mA

5.25 V

4.75 V

5

NO

CMOS

INDUSTRIAL

UNSPECIFIED

UNSPECIFIED

SLC NAND TYPE

26.6 mm

MTFDCAE001SAF-1D1 by Micron Technology

MTFDCAE001SAF-1D1

Micron Technology

FLASH MODULE; Temperature Grade: COMMERCIAL; Package Code: XMA; Package Shape: RECTANGULAR; Technology: CMOS; Minimum Supply Voltage (Vsup): 4.75 V;

R-XXMA-X

36.9 mm

8589934592 bit

FLASH MODULE

8

1

1073741824 words

1G

ASYNCHRONOUS

70 Cel

0 Cel

1GX8

UNSPECIFIED

XMA

RECTANGULAR

MICROELECTRONIC ASSEMBLY

SERIAL

5

9.7 mm

.06 Amp

120 mA

5.25 V

4.75 V

5

NO

CMOS

COMMERCIAL

UNSPECIFIED

UNSPECIFIED

SLC NAND TYPE

26.6 mm

MTFDCAE002SAF-1B1 by Micron Technology

MTFDCAE002SAF-1B1

Micron Technology

FLASH MODULE; Temperature Grade: COMMERCIAL; Package Code: XMA; Package Shape: RECTANGULAR; Terminal Position: UNSPECIFIED; Memory Density: 17179869184 bit;

R-XXMA-X

36.9 mm

17179869184 bit

FLASH MODULE

8

1

2147483648 words

2G

ASYNCHRONOUS

70 Cel

0 Cel

2GX8

UNSPECIFIED

XMA

RECTANGULAR

MICROELECTRONIC ASSEMBLY

SERIAL

5

9.7 mm

.06 Amp

120 mA

5.25 V

4.75 V

5

NO

CMOS

COMMERCIAL

UNSPECIFIED

UNSPECIFIED

SLC NAND TYPE

26.6 mm

MTFDCAE004SAF-1B1 by Micron Technology

MTFDCAE004SAF-1B1

Micron Technology

FLASH MODULE; Temperature Grade: COMMERCIAL; Package Code: XMA; Package Shape: RECTANGULAR; Programming Voltage (V): 5; No. of Functions: 1;

R-XXMA-X

36.9 mm

34359738368 bit

FLASH MODULE

8

1

4294967296 words

4G

ASYNCHRONOUS

70 Cel

0 Cel

4GX8

UNSPECIFIED

XMA

RECTANGULAR

MICROELECTRONIC ASSEMBLY

SERIAL

5

9.7 mm

.06 Amp

120 mA

5.25 V

4.75 V

5

NO

CMOS

COMMERCIAL

UNSPECIFIED

UNSPECIFIED

SLC NAND TYPE

26.6 mm

SST39LF401C-55-4C-B3KE by Microchip Technology

SST39LF401C-55-4C-B3KE

Microchip Technology

SST39LF401C-55-4C-B3KE by Microchip Technology is a 256Kx16 NOR flash memory with 100000 Write/Erase Cycles. Operating at 3.3V, it offers fast access time of 55ns and features a parallel interface for high-speed data transfer. Ideal for applications requiring reliable non-volatile memory storage in commercial temperature environments.

55 ns

BOTTOM BOOT BLOCK

BOTTOM

YES

YES

YES

100

100000 Write/Erase Cycles

R-PBGA-B48

e1

8 mm

4194304 bit

FLASH

16

3

1

1

1,2,1,7

48

262144 words

256K

ASYNCHRONOUS

70 Cel

0 Cel

256KX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

3.3

3.3

Not Qualified

YES

1.2 mm

8K,4K,16K,32K

.00002 Amp

Flash Memories

30 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

40

YES

NOR TYPE

6 mm

SST39LF402C-55-4C-B3KE by Microchip Technology

SST39LF402C-55-4C-B3KE

Microchip Technology

SST39LF402C-55-4C-B3KE by Microchip: 256Kx16 NOR Flash Memory with 70°C max temp, 55ns access time, and 100k Write/Erase cycles. Ideal for commercial applications requiring fast data access and high endurance.

55 ns

TOP BOOT BLOCK

TOP

YES

YES

YES

100

100000 Write/Erase Cycles

R-PBGA-B48

e1

8 mm

4194304 bit

FLASH

16

3

1

1

1,2,1,7

48

262144 words

256K

ASYNCHRONOUS

70 Cel

0 Cel

256KX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

3.3

3.3

Not Qualified

YES

1.2 mm

8K,4K,16K,32K

.00002 Amp

Flash Memories

30 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

40

YES

NOR TYPE

6 mm

SST39VF402C-70-4I-B3KE by Microchip Technology

SST39VF402C-70-4I-B3KE

Microchip Technology

SST39VF402C-70-4I-B3KE by Microchip Technology is a 256Kx16 NOR flash memory with 3V nominal voltage. It features 100,000 write/erase cycles, operates in industrial temperature range (-40 to 85°C), and has a max access time of 70ns. Ideal for applications requiring fast, reliable non-volatile memory storage in compact electronic devices.

70 ns

TOP BOOT BLOCK

TOP

YES

YES

YES

100

100000 Write/Erase Cycles

R-PBGA-B48

e1

8 mm

4194304 bit

FLASH

16

3

1

1

1,2,1,7

48

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

3/3.3

3

Not Qualified

YES

1.2 mm

8K,4K,16K,32K

.00002 Amp

Flash Memories

30 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

40

YES

NOR TYPE

6 mm

RC28F00AM29EWHA by Micron Technology

RC28F00AM29EWHA

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: LBGA; Package Shape: RECTANGULAR; Power Supplies (V): 3/3.3;

100 ns

8

YES

YES

YES

R-PBGA-B64

e0

13 mm

1073741824 bit

FLASH

16

1

1K

64

67108864 words

64M

ASYNCHRONOUS

85 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

LBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

16/32

PARALLEL

3/3.3

3

Not Qualified

YES

1.4 mm

128K

.00024 Amp

Flash Memories

31 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN LEAD SILVER

BALL

1 mm

BOTTOM

YES

NOR TYPE

11 mm

M45PE10S-VMN6P by Micron Technology

M45PE10S-VMN6P

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; JESD-30 Code: R-PDSO-G8;

75 MHz

R-PDSO-G8

4.9 mm

1048576 bit

FLASH

8

1

8

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

SERIAL

NOT SPECIFIED

2.7

1.75 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

NOR TYPE

3.9 mm

23 ms

M45PE10S-VMP6G by Micron Technology

M45PE10S-VMP6G

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: HVSON; Package Shape: RECTANGULAR; Maximum Seated Height: 1 mm;

75 MHz

R-PDSO-N8

6 mm

1048576 bit

FLASH

8

1

8

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

HVSON

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

2.7

1 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

NO LEAD

1.27 mm

DUAL

NOR TYPE

5 mm

23 ms

TC58NVG1S3ETAI0 by Toshiba

TC58NVG1S3ETAI0

Toshiba

Toshiba's TC58NVG1S3ETAI0 is a 256MX8 flash memory with 2K sectors and 128K word sector size. Operating at 3.3V, it offers fast access time of 25ns and low standby current of 0.00005Amp. Ideal for industrial applications requiring high memory density and reliable performance in a small outline package.

25 ns

YES

NO

R-PDSO-G48

18.4 mm

2147483648 bit

FLASH

8

1

2K

48

268435456 words

256M

ASYNCHRONOUS

85 Cel

-40 Cel

256MX8

PLASTIC/EPOXY

TSSOP

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

2K

SERIAL

3/3.3

3.3

Not Qualified

YES

1.2 mm

128K

.00005 Amp

Flash Memories

30 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

NO

N25Q256A13EF840E by Micron Technology

N25Q256A13EF840E

Micron Technology

Micron Technology's N25Q256A13EF840E is a NOR type Flash Memory with 256Mx1 organization, operating in synchronous mode at up to 108MHz clock frequency. Ideal for industrial applications, it offers a memory density of 268435456 bits and supports SPI serial bus communication.

108 MHz

20

R-PDSO-N8

8 mm

268435456 bit

FLASH

1

1

8

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX1

PLASTIC/EPOXY

HSON

SOLCC8,.3

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG

SERIAL

260

Not Qualified

1 mm

SPI

.00025 Amp

20 mA

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

NO LEAD

1.27 mm

DUAL

30

NOR TYPE

6 mm

HARDWARE/SOFTWARE

N25Q256A13EF840F by Micron Technology

N25Q256A13EF840F

Micron Technology

N25Q256A13EF840F by Micron Technology is a NOR flash memory with 32MX8 organization, SPI serial bus type, and 108 MHz clock frequency. It operates at temperatures ranging from -40 to 85 °C and has an endurance of 100K write/erase cycles. Ideal for industrial applications requiring high-speed data storage in compact devices.

SPI-COMPATIBLE SERIAL BUS INTERFACE

108 MHz

20

100000 Write/Erase Cycles

R-PDSO-N8

8 mm

268435456 bit

FLASH

8

1

8

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX8

PLASTIC/EPOXY

HVSON

SOLCC8,.3

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

3/3.3

3

Not Qualified

1 mm

SPI

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

NO LEAD

1.27 mm

DUAL

30

NOR TYPE

6 mm

HARDWARE/SOFTWARE

NAND128W3AABN6E by Micron Technology

NAND128W3AABN6E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSSOP; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

35 ns

R-PDSO-G48

e3

18.4 mm

134217728 bit

FLASH

8

1

48

16777216 words

16M

ASYNCHRONOUS

85 Cel

-40 Cel

16MX8

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

PARALLEL

260

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.5 mm

DUAL

30

SLC NAND TYPE

12 mm

MTFDDAC128MAM-1J1 by Micron Technology

MTFDDAC128MAM-1J1

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; Package Shape: RECTANGULAR; Programming Voltage (V): 5; No. of Functions: 1; Package Body Material: UNSPECIFIED;

R-XXMA-N

100.2 mm

FLASH

1

UNSPECIFIED

RECTANGULAR

MICROELECTRONIC ASSEMBLY

5

9.7 mm

YES

CMOS

COMMERCIAL

NO LEAD

UNSPECIFIED

MLC NAND TYPE

69.85 mm

MTFDDAC256MAM-1K1 by Micron Technology

MTFDDAC256MAM-1K1

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; Package Shape: RECTANGULAR; Terminal Position: UNSPECIFIED; Terminal Form: NO LEAD; Package Body Material: UNSPECIFIED;

R-XXMA-N

100.2 mm

FLASH

1

UNSPECIFIED

RECTANGULAR

MICROELECTRONIC ASSEMBLY

5

9.7 mm

YES

CMOS

COMMERCIAL

NO LEAD

UNSPECIFIED

MLC NAND TYPE

69.85 mm

MTFDDAK128MAM-1J1 by Micron Technology

MTFDDAK128MAM-1J1

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; Package Shape: RECTANGULAR; Length: 100.2 mm; Surface Mount: YES; No. of Functions: 1;

R-XXMA-N

100.2 mm

FLASH

1

UNSPECIFIED

RECTANGULAR

MICROELECTRONIC ASSEMBLY

5

7 mm

YES

CMOS

COMMERCIAL

NO LEAD

UNSPECIFIED

MLC NAND TYPE

69.85 mm

MTFDDAK256MAM-1K1 by Micron Technology

MTFDDAK256MAM-1K1

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; Package Shape: RECTANGULAR; Length: 100.2 mm; Surface Mount: YES; Width: 69.85 mm;

R-XXMA-N

100.2 mm

FLASH

1

UNSPECIFIED

RECTANGULAR

MICROELECTRONIC ASSEMBLY

5

7 mm

YES

CMOS

COMMERCIAL

NO LEAD

UNSPECIFIED

MLC NAND TYPE

69.85 mm

MTFDDAK512MAM-1K1 by Micron Technology

MTFDDAK512MAM-1K1

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; Package Shape: RECTANGULAR; No. of Functions: 1; Technology: CMOS; Maximum Seated Height: 7 mm;

R-XXMA-N

100.2 mm

FLASH

1

UNSPECIFIED

RECTANGULAR

MICROELECTRONIC ASSEMBLY

5

7 mm

YES

CMOS

COMMERCIAL

NO LEAD

UNSPECIFIED

MLC NAND TYPE

69.85 mm