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MT29F128G08AKCABH2-10ITZ:A

Micron Technology

MT29F128G08AKCABH2-10ITZ:A by Micron Technology

Micron Technology's MT29F128G08AKCABH2-10ITZ:A is a 16GX8 SLC NAND flash memory with 1M sector size and 8K page size. It operates at industrial temperature grade, with parallel interface and 100 terminals in a grid array package. Ideal for applications requiring high-speed data storage and retrieval.

Median Price

$136.035

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$136.035

100+ parts

-

1k+ parts

-

10k+ parts

-

100

$136.035

-

-

-

Vyrian

USA . 5,872 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,872

-

-

-

-

Chip Stock

USA . 5,513 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,513

-

-

-

-

Digiode

USA . 350 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

350

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 222 parts In-Stock

1+ parts

$3.450

100+ parts

-

1k+ parts

-

10k+ parts

-

222

$3.450

-

-

-

Corohmni

South Africa . 1,322 parts In-Stock

1+ parts

$4.375

100+ parts

-

1k+ parts

-

10k+ parts

-

1,322

$4.375

-

-

-

Semicontronic

India . 467 parts In-Stock

1+ parts

$7.000

100+ parts

$6.825

1k+ parts

$6.790

10k+ parts

-

467

$7.000

$6.825

$6.790

-

AZTECH Wire

Italy . 397 parts In-Stock

1+ parts

$10.425

100+ parts

-

1k+ parts

-

10k+ parts

-

397

$10.425

-

-

-

Ampacity Inc.

Singapore . 1,350 parts In-Stock

1+ parts

$27.000

100+ parts

-

1k+ parts

-

10k+ parts

-

1,350

$27.000

-

-

-

Continental Prestige Electronics

USA . 5,714 parts In-Stock

1+ parts

$134.688

100+ parts

-

1k+ parts

-

10k+ parts

$131.995

5,714

$134.688

-

-

$131.995

Netroflash

USA . 2,000 parts In-Stock

1+ parts

$136.035

100+ parts

-

1k+ parts

$129.234

10k+ parts

$126.513

2,000

$136.035

-

$129.234

$126.513

Authorized Procurement Solutions

USA . 20,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

20,000

-

-

-

-

Corphita

USA . 2,427 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,427

-

-

-

-

Argo Parts USA

USA . 1,821 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,821

-

-

-

-

Component Stockers USA

USA . 1 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1

-

-

-

-

Overview

Discover the cutting-edge technology of Micron Technology's MT29F128G08AKCABH2-10ITZ:A Flash Memory. With a focus on quality and reliability, this product offers unparalleled performance for a variety of applications. Whether you're looking to enhance your industrial equipment or improve the efficiency of your electronic devices, this Flash Memory delivers exceptional value and benefits. Trust in Micron Technology to provide top-of-the-line memory solutions that elevate your products to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection for the flash memory, making it a reliable choice for various applications.

No. of Terminals: 100

Having a high number of terminals allows for more connectivity options and enhances the versatility of the flash memory device.

Technology: CMOS

CMOS technology ensures low power consumption and high performance, making the flash memory energy-efficient and fast.

Memory Density: 137438953472 bit

With a high memory density, this flash memory can store large amounts of data efficiently, making it suitable for high-capacity storage needs.

Maximum Standby Current: 0.00001 Amp

The low standby current ensures minimal power consumption when the flash memory is not in active use, contributing to energy savings.

Technical Specifications

Flash Memory MT29F128G08AKCABH2-10ITZ:A attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

20 ns

Command User Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PBGA-B100

Memory Density:

137438953472 bit

Memory IC Type:

Memory Width:

8

No. of Sectors/Size:

16K

No. of Terminals:

100

No. of Words:

17179869184 words

No. of Words Code:

16G

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

16GX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

BGA

Package Equivalence Code:

BGA100,10X17,40

Package Shape:

Package Style (Meter):

GRID ARRAY

Page Size (words):

8K

Parallel or Serial:

PARALLEL

Power Supplies (V):

1.8,3/3.3

Qualification:

Not Qualified

Ready or Busy:

YES

Sector Size (Words):

1M

Maximum Standby Current:

.00001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

50 mA

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Toggle Bit:

NO

Type:

SLC NAND TYPE

Trade Compliance

MT29F128G08AKCABH2-10ITZ:A Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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