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MT29F64G08AECABH1-10ITZ:A

Micron Technology

MT29F64G08AECABH1-10ITZ:A by Micron Technology

MT29F64G08AECABH1-10ITZ:A by Micron Technology is an 8GX8 SLC NAND flash memory with 8K sectors. Operating at -40 to 85 °C, it has a memory density of 68719476736 bit and max access time of 20 ns. Ideal for industrial applications requiring fast, reliable data storage with low standby current consumption.

Median Price

$186.945

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 43 parts In-Stock

1+ parts

$151.190

100+ parts

$131.292

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-

10k+ parts

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43

$151.190

$131.292

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Mouser Electronics

USA . 289 parts In-Stock

1+ parts

$222.700

100+ parts

-

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289

$222.700

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-

-

Edge Electronics

USA . 1,000 parts In-Stock

1+ parts

-

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-

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1,000

-

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 376 parts In-Stock

1+ parts

$58.482

100+ parts

-

1k+ parts

-

10k+ parts

-

376

$58.482

-

-

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Nova Conductors

Japan . 25 parts In-Stock

1+ parts

$65.741

100+ parts

-

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25

$65.741

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Chip Stock

USA . 19,900 parts In-Stock

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-

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19,900

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Vyrian

USA . 8,292 parts In-Stock

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-

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8,292

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NAC Semi

USA . 1,235 parts In-Stock

1+ parts

-

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$95.090

1,235

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-

$95.090

First Choice Components Inc.

USA . 6 parts In-Stock

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6

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Stockers USA

USA . 5,268 parts In-Stock

1+ parts

$38.500

100+ parts

$36.580

1k+ parts

$35.420

10k+ parts

-

5,268

$38.500

$36.580

$35.420

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Corphita

USA . 2,060 parts In-Stock

1+ parts

$55.404

100+ parts

-

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2,060

$55.404

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Ampacity Inc.

Singapore . 592 parts In-Stock

1+ parts

$113.980

100+ parts

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592

$113.980

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A-Z Elektronik GmbH

Germany . 5,541 parts In-Stock

1+ parts

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5,541

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Argo Parts USA

USA . 2,844 parts In-Stock

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2,844

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Perfect Parts

USA . 2,285 parts In-Stock

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2,285

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Netroflash

USA . 500 parts In-Stock

1+ parts

-

100+ parts

$64.426

1k+ parts

$62.454

10k+ parts

$61.139

500

-

$64.426

$62.454

$61.139

Continental Prestige Electronics

USA . 456 parts In-Stock

1+ parts

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456

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Authorized Procurement Solutions

USA . 115 parts In-Stock

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115

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GreenTree Electronics

Israel . 115 parts In-Stock

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115

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Overview

Unlock the power of cutting-edge technology with the MT29F64G08AECABH1-10ITZ:A by Micron Technology. This top-of-the-line flash memory device offers unparalleled quality and reliability, making it the perfect choice for a wide range of applications. With a durable plastic/epoxy package body and industrial-grade temperature grade, this product ensures optimal performance in any environment. Experience lightning-fast access times, low standby current, and a user-friendly command interface that puts you in control. Trust Micron Technology to deliver superior products that exceed your expectations every time. Elevate your projects with the MT29F64G08AECABH1-10ITZ:A today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the flash memory, making it suitable for use in various environments.

Power Supplies (V): 1.8,3/3.3

With multiple power supply options, this flash memory can be easily integrated into different electronic systems with varying voltage requirements.

Maximum Operating Temperature: 85 °C

The flash memory can operate efficiently in high temperature conditions, ensuring reliable performance even in industrial settings.

Organization: 8GX8

The 8GX8 organization allows for efficient storage and retrieval of data in the flash memory, making it ideal for applications that require fast access to information.

Technology: CMOS

The CMOS technology used in this flash memory ensures low power consumption and high-speed operation, making it energy-efficient and responsive.

Memory IC Type: FLASH

Being a flash memory IC, this product offers non-volatile storage capabilities, retaining data even when power is turned off, making it a reliable choice for data retention.

Technical Specifications

Flash Memory MT29F64G08AECABH1-10ITZ:A attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

20 ns

Command User Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PBGA-B100

Memory Density:

68719476736 bit

Memory IC Type:

Memory Width:

8

No. of Sectors/Size:

8K

No. of Terminals:

100

No. of Words:

8589934592 words

No. of Words Code:

8G

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8GX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

BGA

Package Equivalence Code:

BGA100,10X17,40

Package Shape:

Package Style (Meter):

GRID ARRAY

Page Size (words):

8K

Parallel or Serial:

PARALLEL

Power Supplies (V):

1.8,3/3.3

Qualification:

Not Qualified

Ready or Busy:

YES

Sector Size (Words):

1M

Maximum Standby Current:

.00001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

50 mA

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Toggle Bit:

NO

Type:

SLC NAND TYPE

Trade Compliance

MT29F64G08AECABH1-10ITZ:A Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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