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MT29F256G08AUCABH3-10ITZ:A

Micron Technology

MT29F256G08AUCABH3-10ITZ:A by Micron Technology

Micron Technology's MT29F256G08AUCABH3-10ITZ:A is a SLC NAND flash memory with 32K sectors, 8K page size, and 1M sector size. It operates at temperatures from -40 to 85°C and has a max access time of 20 ns. Ideal for industrial applications requiring high-density memory with low standby current.

Median Price

$455.935

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 3 parts In-Stock

1+ parts

$419.040

100+ parts

$372.410

1k+ parts

-

10k+ parts

-

3

$419.040

$372.410

-

-

Newark

USA . 57 parts In-Stock

1+ parts

$453.190

100+ parts

$413.530

1k+ parts

-

10k+ parts

-

57

$453.190

$413.530

-

-

Farnell

UK . 57 parts In-Stock

1+ parts

$458.680

100+ parts

-

1k+ parts

-

10k+ parts

-

57

$458.680

-

-

-

Element14

Singapore . 57 parts In-Stock

1+ parts

$784.350

100+ parts

-

1k+ parts

-

10k+ parts

-

57

$784.350

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$238.414

100+ parts

-

1k+ parts

-

10k+ parts

-

50

$238.414

-

-

-

Digiode

USA . 2,057 parts In-Stock

1+ parts

$273.838

100+ parts

-

1k+ parts

-

10k+ parts

-

2,057

$273.838

-

-

-

Vyrian

USA . 5,577 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,577

-

-

-

-

Chip Stock

USA . 4,245 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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4,245

-

-

-

-

Cyclops Electronics Ltd

UK . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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2,000

-

-

-

-

NAC Semi

USA . 1,120 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.237

1,120

-

-

-

$0.237

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 350 parts In-Stock

1+ parts

$5.133

100+ parts

$4.671

1k+ parts

$4.209

10k+ parts

-

350

$5.133

$4.671

$4.209

-

Aztec Data Supply Inc.

USA . 249 parts In-Stock

1+ parts

$5.280

100+ parts

-

1k+ parts

-

10k+ parts

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249

$5.280

-

-

-

AZTECH Wire

Italy . 488 parts In-Stock

1+ parts

$8.703

100+ parts

-

1k+ parts

-

10k+ parts

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488

$8.703

-

-

-

Ampacity Inc.

Singapore . 133 parts In-Stock

1+ parts

$249.730

100+ parts

-

1k+ parts

-

10k+ parts

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133

$249.730

-

-

-

Corphita

USA . 1,925 parts In-Stock

1+ parts

$259.425

100+ parts

-

1k+ parts

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10k+ parts

-

1,925

$259.425

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Kepictronics

USA . 6,658 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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6,658

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-

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Continental Prestige Electronics

USA . 6,219 parts In-Stock

1+ parts

-

100+ parts

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6,219

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-

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Argo Parts USA

USA . 5,313 parts In-Stock

1+ parts

-

100+ parts

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5,313

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-

-

-

Authorized Procurement Solutions

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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5,000

-

-

-

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S.R.D Solutions

India . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,000

-

-

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Perfect Parts

USA . 2,267 parts In-Stock

1+ parts

-

100+ parts

-

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2,267

-

-

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Corohmni

South Africa . 152 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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152

-

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RC Electronics

USA . 72 parts In-Stock

1+ parts

-

100+ parts

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72

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-

Overview

Upgrade your electronic devices with the high-quality MT29F256G08AUCABH3-10ITZ:A by Micron Technology. This flash memory offers exceptional reliability and performance, perfect for a wide range of applications in industrial settings. With its advanced technology and industrial-grade temperature tolerance, this product guarantees seamless operation and data storage. Trust Micron Technology to deliver the value and benefits you need for your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material offers durability and protection to the flash memory, ensuring a longer lifespan.

Surface Mount: YES

Allows for easy installation on a PCB, saving time and effort during assembly.

Power Supplies (V): 1.8,3/3.3

Compatible with a wide range of power supplies, increasing versatility in different applications.

No. of Terminals: 100

Provides ample connectivity options for interfacing with other devices.

Package Style (Meter): GRID ARRAY

Grid array package style offers high density and reliability, making it suitable for industrial use.

Maximum Operating Temperature: 85 °C

Can operate efficiently even in high-temperature environments, ensuring reliable performance.

No. of Sectors/Size: 32K

Allows for efficient organization of data and quick access to specific sectors.

Page Size (words): 8K

Large page size allows for faster data transfer and storage efficiency.

Type: SLC NAND TYPE

Single-Level Cell NAND type offers high performance and reliability for critical data storage.

Technology: CMOS

CMOS technology ensures low power consumption and high-speed operation.

Sector Size (Words): 1M

Large sector size allows for efficient storage and retrieval of data in bulk.

Maximum Access Time: 20 ns

Fast access time ensures quick read and write operations, enhancing overall performance.

Technical Specifications

Flash Memory MT29F256G08AUCABH3-10ITZ:A attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

20 ns

Command User Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PBGA-B100

Memory Density:

274877906944 bit

Memory IC Type:

No. of Sectors/Size:

32K

No. of Terminals:

100

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

BGA

Package Equivalence Code:

BGA100,10X17,40

Package Shape:

Package Style (Meter):

GRID ARRAY

Page Size (words):

8K

Parallel or Serial:

PARALLEL

Power Supplies (V):

1.8,3/3.3

Qualification:

Not Qualified

Ready or Busy:

YES

Sector Size (Words):

1M

Maximum Standby Current:

.00001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

50 mA

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Toggle Bit:

NO

Type:

SLC NAND TYPE

Trade Compliance

MT29F256G08AUCABH3-10ITZ:A Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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