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MT29F64G08AECABH1-10Z:A

Micron Technology

MT29F64G08AECABH1-10Z:A by Micron Technology

MT29F64G08AECABH1-10Z:A by Micron Technology is a 8GX8 SLC NAND flash memory with 8K sectors and 1M word sector size. Operating at 0-70 °C, it has a max access time of 20 ns and consumes up to 50 mA current. Ideal for commercial applications requiring high memory density and fast data access.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,210 parts In-Stock

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7,210

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Digiode

USA . 1,726 parts In-Stock

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1,726

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Nova Conductors

Japan . 21 parts In-Stock

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21

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,376 parts In-Stock

1+ parts

$14.000

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1,376

$14.000

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AZTECH Wire

Italy . 649 parts In-Stock

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$14.340

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649

$14.340

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A-Z Elektronik GmbH

Germany . 6,072 parts In-Stock

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6,072

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QUARKTWIN TECHNOLOGY LTD

USA . 5,125 parts In-Stock

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5,125

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Kepictronics

USA . 4,843 parts In-Stock

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4,843

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Perfect Parts

USA . 2,271 parts In-Stock

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2,271

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Corphita

USA . 2,137 parts In-Stock

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2,137

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Aranea Global

USA . 2,000 parts In-Stock

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2,000

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Futuretech Components

Singapore . 1,600 parts In-Stock

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1,600

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Microchip USA

USA . 346 parts In-Stock

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346

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Overview

Unleash the power of cutting-edge technology with Micron Technology's MT29F64G08AECABH1-10Z:A Flash Memory. Designed for superior performance and reliability, this product offers unparalleled value for a wide range of applications. With its top-notch quality and innovative features, it provides customers with the ultimate solution for their memory storage needs. Trust Micron Technology to deliver excellence in every aspect, from package material to temperature grade, ensuring that your devices run seamlessly and efficiently. Experience the difference with Micron Technology today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the flash memory, making it a reliable choice.

Surface Mount: YES

The surface mount design allows for easy installation and space-saving, ideal for compact devices.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for efficient arrangement and use of space in electronic devices.

Power Supplies (V): 1.8,3/3.3

The multiple power supply options allow for versatile compatibility with various systems.

No. of Terminals: 100

With a high number of terminals, this flash memory offers enhanced connectivity and data transfer capabilities.

Package Style (Meter): GRID ARRAY

The grid array package style ensures secure connections and reliable performance in different environments.

Maximum Operating Temperature: 70 °C

The high operating temperature range makes this flash memory suitable for use in various conditions.

Organization: 8GX8

The organization of 8GX8 enhances performance and efficiency in data storage and retrieval processes.

Minimum Operating Temperature: 0 °C

The low minimum operating temperature allows the flash memory to function reliably even in cold environments.

No. of Sectors/Size: 8K

The 8K sectors offer efficient organization and management of data on the flash memory.

Terminal Position: BOTTOM

The terminal position at the bottom facilitates easy installation and connectivity in electronic devices.

Page Size (words): 8K

The 8K page size enhances data transfer speeds and overall performance of the flash memory.

Type: SLC NAND TYPE

The SLC NAND type ensures fast read and write speeds, making it a high-performing choice.

Temperature Grade: COMMERCIAL

The commercial temperature grade ensures compatibility with a wide range of consumer electronic devices.

Technology: CMOS

The CMOS technology used in this flash memory offers low power consumption and high-speed performance.

Parallel or Serial: PARALLEL

The parallel interface allows for simultaneous data transfer, increasing efficiency in data processing.

Terminal Form: BALL

The ball terminal form provides a secure and reliable connection for stable performance.

Sector Size (Words): 1M

The large 1M sector size allows for efficient organization and storage of data on the flash memory.

Maximum Supply Current: 50 mA

The low maximum supply current ensures energy efficiency and prolonged battery life in devices using this flash memory.

No. of Words: 8589934592 words

With a high number of words, this flash memory offers ample storage capacity for data-intensive applications.

Memory Width: 8

The memory width of 8 bits allows for efficient data processing and storage on the flash memory.

Terminal Pitch: 1 mm

The 1mm terminal pitch enables compact design and space-saving in devices utilizing this flash memory.

No. of Words Code: 8G

The 8G words code denotes a high capacity storage option for data-intensive applications.

Command User Interface: YES

The command user interface provides user-friendly operation and control over data storage and retrieval processes.

Ready or Busy: YES

The "Ready or Busy" feature ensures efficient data access and reliability in data processing tasks.

Memory Density: 68719476736 bit

The high memory density allows for storing large amounts of data in a compact form factor.

Memory IC Type: FLASH

The flash memory IC type offers fast access times and reliable data storage capabilities.

Maximum Standby Current: 0.00001 Amp

The extremely low standby current helps conserve power and prolong device battery life.

Maximum Access Time: 20 ns

The fast maximum access time ensures quick data retrieval and efficient performance of the flash memory.

Technical Specifications

Flash Memory MT29F64G08AECABH1-10Z:A attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

20 ns

Command User Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PBGA-B100

Memory Density:

68719476736 bit

Memory IC Type:

Memory Width:

8

No. of Sectors/Size:

8K

No. of Terminals:

100

No. of Words:

8589934592 words

No. of Words Code:

8G

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

8GX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

BGA

Package Equivalence Code:

BGA100,10X17,40

Package Shape:

Package Style (Meter):

GRID ARRAY

Page Size (words):

8K

Parallel or Serial:

PARALLEL

Power Supplies (V):

1.8,3/3.3

Qualification:

Not Qualified

Ready or Busy:

YES

Sector Size (Words):

1M

Maximum Standby Current:

.00001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

50 mA

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Toggle Bit:

NO

Type:

SLC NAND TYPE

Trade Compliance

MT29F64G08AECABH1-10Z:A Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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