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N25Q256A13EF840F

Micron Technology

N25Q256A13EF840F by Micron Technology

N25Q256A13EF840F by Micron Technology is a NOR flash memory with 32MX8 organization, SPI serial bus type, and 108 MHz clock frequency. It operates at temperatures ranging from -40 to 85 °C and has an endurance of 100K write/erase cycles. Ideal for industrial applications requiring high-speed data storage in compact devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,735 parts In-Stock

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6,735

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Chip Stock

USA . 2,620 parts In-Stock

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2,620

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Digiode

USA . 1,841 parts In-Stock

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1,841

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Nova Conductors

Japan . 88 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 267 parts In-Stock

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$3.557

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267

$3.557

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Aztec Data Supply Inc.

USA . 100 parts In-Stock

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$5.620

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100

$5.620

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AZTECH Wire

Italy . 253 parts In-Stock

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$8.575

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$8.575

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Ampacity Inc.

Singapore . 371 parts In-Stock

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$18.000

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$18.000

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Epart123

USA . 20,000 parts In-Stock

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$76.920

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$76.920

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$76.920

$76.920

Perfect Parts

USA . 7,280 parts In-Stock

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Continental Prestige Electronics

USA . 6,258 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Argo Parts USA

USA . 4,967 parts In-Stock

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A-Z Elektronik GmbH

Germany . 4,574 parts In-Stock

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Futuretech Components

Singapore . 4,000 parts In-Stock

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S.R.D Solutions

India . 2,500 parts In-Stock

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Corphita

USA . 2,406 parts In-Stock

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Sternenhof Electronics (Excess)

Switzerland . 2,387 parts In-Stock

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Bastille Electronics

Australia . 500 parts In-Stock

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500

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Kepictronics

USA . 474 parts In-Stock

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Microchip USA

USA . 121 parts In-Stock

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Overview

Experience the next level of performance and reliability with the N25Q256A13EF840F by Micron Technology. As a leading manufacturer in flash memory technology, Micron delivers unparalleled quality and innovation. This versatile product is designed for a wide range of applications, offering customers exceptional value and benefits. With its high endurance, fast data transfer speeds, and industrial-grade temperature tolerance, the N25Q256A13EF840F is the perfect choice for demanding projects that require reliable memory storage. Trust Micron to deliver cutting-edge solutions for all your memory needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body material ensures durability and protection for the flash memory product.

Surface Mount: YES

The surface mount feature allows for easy and convenient installation of the flash memory product onto a circuit board.

Package Shape: RECTANGULAR

The rectangular package shape offers a compact and space-saving design for the flash memory product.

Operating Mode: SYNCHRONOUS

The synchronous operating mode ensures efficient and synchronized data transfer, making this flash memory a reliable choice.

Nominal Supply Voltage: 3V

The 3V nominal supply voltage provides a stable power source for the flash memory product, ensuring consistent performance.

Power Supplies: 3/3.3V

The dual power supply options of 3V and 3.3V allow flexibility in voltage requirements for different applications.

No. of Terminals: 8

The 8 terminals provide sufficient connectivity options for interfacing the flash memory product with other components.

Package Style: SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

The small outline, heat sink/slug, and very thin profile package style offer enhanced thermal management and space efficiency for the flash memory.

Maximum Operating Temperature: 85°C

With a maximum operating temperature of 85°C, this flash memory product can withstand high temperature environments, ensuring reliability in various conditions.

Organization: 32MX8

The 32MX8 organization allows for efficient memory organization and management, optimizing data storage and retrieval processes.

Technical Specifications

Flash Memory N25Q256A13EF840F attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Additional Features:

SPI-COMPATIBLE SERIAL BUS INTERFACE

Maximum Clock Frequency (fCLK):

108 MHz

Minimum Data Retention Time:

20

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-N8

Length:

8 mm

Memory Density:

268435456 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

8

No. of Words:

33554432 words

No. of Words Code:

32M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC8,.3

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3/3.3

Programming Voltage (V):

3

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Type:

NOR TYPE

Width:

6 mm

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

N25Q256A13EF840F Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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