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MT29F4G16ABADAH4:D

Micron Technology

MT29F4G16ABADAH4:D by Micron Technology

Micron Technology's MT29F4G16ABADAH4:D is a 256MX16 SLC NAND flash memory with 3.3V supply, 1K page size, and 64K sector size. It operates in asynchronous mode with a max access time of 25ns. Ideal for commercial applications requiring fast data storage and retrieval in compact devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

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Chip Stock

USA . 4,448 parts In-Stock

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Vyrian

USA . 4,364 parts In-Stock

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Dynamic Solutions

Germany . 4,000 parts In-Stock

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Cyclops Electronics Ltd

UK . 3,314 parts In-Stock

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Digiode

USA . 1,442 parts In-Stock

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Bristol Electronics

USA . 966 parts In-Stock

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Zilex Electronics Inc.

Canada . 800 parts In-Stock

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Nova Conductors

Japan . 100 parts In-Stock

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100

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ACDS - Activité Composants Distribution Service

France . 8 parts In-Stock

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Aztec Data Supply Inc.

USA . 500 parts In-Stock

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$2.354

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$2.354

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Ampacity Inc.

Singapore . 782 parts In-Stock

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$13.000

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AZTECH Wire

Italy . 1,020 parts In-Stock

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$18.080

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RC Electronics

USA . 42,046 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,039 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Corphita

USA . 2,031 parts In-Stock

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Aranea Global

USA . 2,000 parts In-Stock

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Kepictronics

USA . 1,200 parts In-Stock

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Microchip USA

USA . 462 parts In-Stock

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Overview

Experience the cutting-edge technology of Micron Technology with the MT29F4G16ABADAH4:D Flash Memory. This high-quality product offers unparalleled reliability and performance, making it ideal for a wide range of applications. From data storage to system booting, this flash memory delivers value and benefits that exceed expectations. Trust in Micron Technology to provide the innovation and quality you need for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material for the package body ensures long-lasting performance and ease of handling.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for faster data transfer speeds and improved efficiency.

Nominal Supply Voltage / Vsup (V): 3.3

Optimal supply voltage ensures stable operation and reliability.

Package Style (Meter): GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Compact and space-saving package design for efficient integration in various devices.

No. of Sectors/Size: 4K

Large sector size allows for efficient data organization and faster access times.

Memory IC Type: FLASH

Flash memory technology offers high-speed read and write capabilities, making it ideal for applications requiring quick data access.

Technical Specifications

Flash Memory MT29F4G16ABADAH4:D attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

25 ns

Command User Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PBGA-B63

Length:

11 mm

Memory Density:

4294967296 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Sectors/Size:

4K

No. of Terminals:

63

No. of Words:

268435456 words

No. of Words Code:

256M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

256MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA63,10X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Page Size (words):

1K

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

Ready or Busy:

YES

Maximum Seated Height:

1 mm

Sector Size (Words):

64K

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

35 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Toggle Bit:

NO

Type:

SLC NAND TYPE

Width:

9 mm

Trade Compliance

MT29F4G16ABADAH4:D Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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