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N25Q032A13E1240E

Micron Technology

N25Q032A13E1240E by Micron Technology

Micron Technology's N25Q032A13E1240E is a NOR type Flash Memory with 32Mx1 organization, operating at 108MHz. It has a max supply voltage of 3.6V and offers 100000 Write/Erase cycles endurance. Ideal for industrial applications requiring high-speed synchronous operation in compact devices.

Median Price

$2.935

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 7,084 parts In-Stock

1+ parts

$3.520

100+ parts

$2.350

1k+ parts

$1.660

10k+ parts

$1.360

7,084

$3.520

$2.350

$1.660

$1.360

Verical

USA . 7,084 parts In-Stock

1+ parts

-

100+ parts

$2.350

1k+ parts

$1.660

10k+ parts

$1.360

7,084

-

$2.350

$1.660

$1.360

Avnet

USA . 144 parts In-Stock

1+ parts

-

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-

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144

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Distributors (In-Stock)

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Digiode

USA . 971 parts In-Stock

1+ parts

$3.344

100+ parts

-

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971

$3.344

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Chip Stock

USA . 14,100 parts In-Stock

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14,100

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Vyrian

USA . 7,666 parts In-Stock

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7,666

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Bristol Electronics

USA . 4,477 parts In-Stock

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4,477

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Nova Conductors

Japan . 100 parts In-Stock

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100

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Distributors (Availability)

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Ampacity Inc.

Singapore . 6,909 parts In-Stock

1+ parts

$2.000

100+ parts

-

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6,909

$2.000

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Corphita

USA . 1,677 parts In-Stock

1+ parts

$3.168

100+ parts

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1,677

$3.168

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Andel Nordic

Denmark . 108 parts In-Stock

1+ parts

$7.057

100+ parts

-

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$6.775

10k+ parts

$6.775

108

$7.057

-

$6.775

$6.775

AZTECH Wire

Italy . 868 parts In-Stock

1+ parts

$15.730

100+ parts

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868

$15.730

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Authorized Procurement Solutions

USA . 7,500 parts In-Stock

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7,500

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Sternenhof Electronics (Excess)

Switzerland . 3,366 parts In-Stock

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3,366

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Kepictronics

USA . 869 parts In-Stock

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869

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A-Z Elektronik GmbH

Germany . 867 parts In-Stock

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867

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ChipstoGo Electronic ltd

UK . 281 parts In-Stock

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281

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Microchip USA

USA . 167 parts In-Stock

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167

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Aranea Global

USA . 50 parts In-Stock

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50

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Overview

Experience lightning-fast data storage and retrieval with the N25Q032A13E1240E by Micron Technology. As a leader in flash memory technology, Micron delivers unparalleled quality and reliability in every product. This versatile flash memory device is perfect for a wide range of applications, offering high-speed performance and low power consumption. Stay ahead of the curve with the N25Q032A13E1240E, providing value, benefits, and advantages that will enhance your overall customer experience.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection to the flash memory, making it long-lasting and reliable.

Surface Mount: YES

Being surface mountable allows for easy integration into various electronic devices, saving space and simplifying the manufacturing process.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures efficient and high-speed data transfer, improving overall performance of the flash memory.

Nominal Supply Voltage / Vsup (V): 3

Operating at a nominal supply voltage of 3V balances power consumption and performance, making it suitable for a wide range of applications.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this flash memory can withstand harsh environments and temperature fluctuations.

Write Protection: HARDWARE/SOFTWARE

Having both hardware and software write protection enhances security and prevents accidental data loss or corruption.

Memory Density: 33554432 bit

With a high memory density, this flash memory can store a large amount of data, making it suitable for data-intensive applications.

Technical Specifications

Flash Memory N25Q032A13E1240E attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

108 MHz

Minimum Data Retention Time:

20

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PBGA-B24

JESD-609 Code:

e1

Length:

8 mm

Memory Density:

33554432 bit

Memory IC Type:

Memory Width:

1

No. of Functions:

1

No. of Terminals:

24

No. of Words:

33554432 words

No. of Words Code:

32M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32MX1

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA24,5X5,40

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE

Parallel or Serial:

SERIAL

Power Supplies (V):

3/3.3

Programming Voltage (V):

3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Type:

NOR TYPE

Width:

6 mm

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

N25Q032A13E1240E Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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