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MT29F8G08ADBDAH4-IT:D

Micron Technology

MT29F8G08ADBDAH4-IT:D by Micron Technology

MT29F8G08ADBDAH4-IT:D by Micron Technology is a 1.8V SLC NAND flash memory with 1GX8 organization, operating in industrial temperature range. Featuring 2K word page size and 128K word sector size, it offers fast access time of 25ns for applications requiring high-speed data storage and retrieval. With a low standby current of 0.00005A, it is suitable for power-sensitive devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 6,480 parts In-Stock

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6,480

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Vyrian

USA . 5,820 parts In-Stock

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5,820

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Digiode

USA . 918 parts In-Stock

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918

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LIBRA Elektronik GmbH

Germany . 285 parts In-Stock

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285

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Nova Conductors

Japan . 71 parts In-Stock

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71

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Speed Components Ltd

Israel . 10 parts In-Stock

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10

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ACDS - Activité Composants Distribution Service

France . 8 parts In-Stock

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8

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ComSIT Distribution GmbH

Germany . 5 parts In-Stock

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5

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Cyclops Electronics Ltd

UK . 2 parts In-Stock

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2

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 224 parts In-Stock

1+ parts

$3.772

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224

$3.772

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Corohmni

South Africa . 290 parts In-Stock

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$4.749

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290

$4.749

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Andel Nordic

Denmark . 1,960 parts In-Stock

1+ parts

$6.977

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$6.698

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$6.698

1,960

$6.977

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$6.698

$6.698

AZTECH Wire

Italy . 334 parts In-Stock

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$14.364

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334

$14.364

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Ampacity Inc.

Singapore . 146 parts In-Stock

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$15.000

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Perfect Parts

USA . 6,695 parts In-Stock

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A-Z Elektronik GmbH

Germany . 4,656 parts In-Stock

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Continental Prestige Electronics

USA . 4,380 parts In-Stock

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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2,500

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Argo Parts USA

USA . 2,056 parts In-Stock

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Corphita

USA . 1,424 parts In-Stock

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Aranea Global

USA . 1,000 parts In-Stock

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1,000

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Formix International (Excess)

India . 516 parts In-Stock

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516

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Microchip USA

USA . 365 parts In-Stock

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365

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iodParts Technologies Inc.

India . 150 parts In-Stock

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150

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Benley Electronics

USA . 100 parts In-Stock

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100

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Overview

Unlock the power of cutting-edge technology with Micron Technology's MT29F8G08ADBDAH4-IT:D Flash Memory. Boasting top-notch quality and reliability, this product is a game-changer in the industry. Perfect for a wide range of applications, it offers lightning-fast access times and unparalleled performance. Say goodbye to slow loading times and hello to seamless operation. Trust Micron Technology to deliver the best in flash memory technology, providing value and benefits that exceed expectations. Upgrade your systems today with the MT29F8G08ADBDAH4-IT:D and experience innovation at its finest.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the product easy to handle and resistant to damage.

Operating Mode: ASYNCHRONOUS

Allows for faster access to data, enhancing overall performance.

Nominal Supply Voltage / Vsup (V): 1.8

Operates at a low voltage, saving power and reducing heat generation.

No. of Terminals: 63

Sufficient terminals for connectivity and data transfer.

Maximum Operating Temperature: 85 °C

Can withstand high temperatures, suitable for industrial applications.

Technology: CMOS

CMOS technology offers low power consumption and high speed operation.

Memory IC Type: FLASH

Flash memory provides non-volatile storage, retaining data even when power is turned off.

Technical Specifications

Flash Memory MT29F8G08ADBDAH4-IT:D attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

25 ns

Command User Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PBGA-B63

JESD-609 Code:

e1

Length:

11 mm

Memory Density:

8589934592 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Sectors/Size:

8K

No. of Terminals:

63

No. of Words:

1073741824 words

No. of Words Code:

1G

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

1GX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA63,10X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Page Size (words):

2K

Parallel or Serial:

PARALLEL

Power Supplies (V):

1.8

Qualification:

Not Qualified

Ready or Busy:

YES

Maximum Seated Height:

1 mm

Sector Size (Words):

128K

Maximum Standby Current:

.00005 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Toggle Bit:

NO

Type:

SLC NAND TYPE

Width:

9 mm

Trade Compliance

MT29F8G08ADBDAH4-IT:D Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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