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RECTANGULAR Flash Memory 1,448

Flash Memory
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Type Width Maximum Write Cycle Time (tWC) Write Protection
SST26WF016BT-104I/MF by Microchip Technology

SST26WF016BT-104I/MF

Microchip Technology

SST26WF016BT-104I/MF by Microchip: NOR Flash Memory, 16MX1 organization, SPI serial bus type. Ideal for industrial applications with -40 to 85 °C operating temp range. Features 104 MHz clock frequency and 100000 write/erase cycles endurance.

104 MHz

100

100000 Write/Erase Cycles

R-PDSO-N8

e3

6 mm

16777216 bit

FLASH

1

1

1

8

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX1

3-STATE

PLASTIC/EPOXY

HVSON

SOLCC8,.25

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

1.8

TS 16949

.8 mm

SPI

.000005 Amp

25 mA

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

MATTE TIN

NO LEAD

1.27 mm

DUAL

NOR TYPE

5 mm

HARDWARE/SOFTWARE

SST26WF016BT-104I/SN by Microchip Technology

SST26WF016BT-104I/SN

Microchip Technology

SST26WF016BT-104I/SN by Microchip: 16MX1 NOR Flash Memory, 104 MHz clock freq., SPI serial bus type. Ideal for industrial applications requiring high endurance with 100K write/erase cycles and low standby current of 0.000005Amp.

104 MHz

100

100000 Write/Erase Cycles

R-PDSO-G8

e3

4.9 mm

16777216 bit

FLASH

1

1

1

1

8

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX1

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

260

1.8

TS 16949

1.75 mm

SPI

.000005 Amp

25 mA

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

40

NOR TYPE

3.9 mm

HARDWARE/SOFTWARE

SST26VF032B-104I/TD by Microchip Technology

SST26VF032B-104I/TD

Microchip Technology

SST26VF032B-104I/TD by Microchip: 3V supply, 104MHz clock freq, SPI serial bus. Ideal for industrial applications requiring EEPROM memory with 100K write/erase cycles and -40 to 85°C operating range. Compact package with 24 terminals, suitable for thin profile designs.

104 MHz

100

100000 Write/Erase Cycles

R-PBGA-B24

e1

8 mm

33554432 bit

EEPROM

8

3

1

1

24

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX8

PLASTIC/EPOXY

TBGA

BGA24,4X6,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

3/3.3

3

Not Qualified

AEC-Q100

1.2 mm

SPI

.000045 Amp

Flash Memories

30 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

NOR TYPE

6 mm

HARDWARE/SOFTWARE

MTFC32GJDDQ-4MIT by Micron Technology

MTFC32GJDDQ-4MIT

Micron Technology

Micron Technology's MTFC32GJDDQ-4MIT is a 32GB MLC NAND flash memory with 100 terminals in a low-profile grid array package. Operating at 3.3V, it is ideal for industrial applications requiring high-density storage in compact spaces. With CMOS technology and ball terminal form, it offers reliable performance for various flash card solutions.

R-PBGA-B100

e1

18 mm

FLASH CARD

1

100

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

3.3

1.4 mm

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

MLC NAND TYPE

14 mm

M25P128-VME6GB by Micron Technology

M25P128-VME6GB

Micron Technology

Micron Technology's M25P128-VME6GB is a 16MX8 NOR flash memory with 134217728 bit density. Operating at 3V, it offers 10000 write/erase cycles and SPI serial bus interface. Ideal for industrial applications requiring high endurance and reliable data storage in compact form factor.

50 MHz

20

10000 Write/Erase Cycles

R-PDSO-N8

8 mm

134217728 bit

FLASH

8

1

8

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX8

PLASTIC/EPOXY

HVSON

SOLCC8,.3

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

3/3.3

2.7

Not Qualified

1 mm

SPI

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

NO LEAD

1.27 mm

DUAL

30

NOR TYPE

6 mm

HARDWARE/SOFTWARE

MT29F1G08ABADAWP-IT:D by Micron Technology

MT29F1G08ABADAWP-IT:D

Micron Technology

Micron Technology's MT29F1G08ABADAWP-IT:D is a 3.3V SLC NAND flash memory with 128Mx8 organization, operating in industrial temperature range. It features 2K page size, 128K sector size, and parallel interface. Ideal for applications requiring fast access times and high memory density.

25 ns

YES

NO

R-PDSO-G48

e3

18.4 mm

1073741824 bit

FLASH

8

1

1K

48

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

2K

PARALLEL

260

3.3

3.3

Not Qualified

YES

1.2 mm

128K

.0001 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN

GULL WING

.5 mm

DUAL

30

NO

SLC NAND TYPE

12 mm

MT29F1G08ABADAWP-ITX:D by Micron Technology

MT29F1G08ABADAWP-ITX:D

Micron Technology

Micron Technology's MT29F1G08ABADAWP-ITX:D is a 128Mx8 SLC NAND flash memory with 3.3V programming voltage, operating in industrial temperature range. It features 2K page size, 128K sector size, and parallel interface. Ideal for applications requiring high-speed data storage and retrieval in harsh environments.

25 ns

YES

NO

R-PDSO-G48

e3

18.4 mm

1073741824 bit

FLASH

8

1

1K

48

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

2K

PARALLEL

260

3.3

3.3

Not Qualified

YES

1.2 mm

128K

.0001 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN

GULL WING

.5 mm

DUAL

30

NO

SLC NAND TYPE

12 mm

MT29F1G08ABBDAH4-IT:D by Micron Technology

MT29F1G08ABBDAH4-IT:D

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 63; Package Code: VFBGA; Package Shape: RECTANGULAR; Power Supplies (V): 1.8;

25 ns

YES

NO

R-PBGA-B63

e1

11 mm

1073741824 bit

FLASH

8

1

1K

63

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

2K

PARALLEL

1.8

1.8

Not Qualified

YES

1 mm

128K

.00005 Amp

Flash Memories

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

NO

SLC NAND TYPE

9 mm

MT29F64G08AFAAAWP-IT:A by Micron Technology

MT29F64G08AFAAAWP-IT:A

Micron Technology

Micron Technology's MT29F64G08AFAAAWP-IT:A is an 8GX8 MLC NAND flash memory with 3.3V supply, 8K page size, and 1M sector size. It operates in industrial temperature range (-40 to 85 °C) and has a parallel interface. Ideal for applications requiring high-density non-volatile memory with fast access times.

20 ns

YES

NO

R-PDSO-G48

e3

18.4 mm

68719476736 bit

FLASH

8

1

8K

48

8589934592 words

8G

ASYNCHRONOUS

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

8K

PARALLEL

3/3.3

3.3

Not Qualified

YES

1.2 mm

1M

.00001 Amp

Flash Memories

50 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

Tin (Sn)

GULL WING

.5 mm

DUAL

NO

MLC NAND TYPE

12 mm

N25Q00AA11G1240E by Micron Technology

N25Q00AA11G1240E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: LBGA; Package Shape: RECTANGULAR; Memory Density: 1073741824 bit;

108 MHz

R-PBGA-B24

e1

8 mm

1073741824 bit

FLASH

1

1

24

1073741824 words

1G

SYNCHRONOUS

85 Cel

-40 Cel

1GX1

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

SERIAL

260

1.8

1.3 mm

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

NOR TYPE

6 mm

MTFDDAK120MAV-1AE12ABYY by Micron Technology

MTFDDAK120MAV-1AE12ABYY

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 22; Package Code: DIE; Package Shape: RECTANGULAR; Length: 100.5 mm;

R-XUUC-N22

100.5 mm

FLASH

1

22

UNSPECIFIED

DIE

RECTANGULAR

UNCASED CHIP

3.3

7 mm

YES

CMOS

COMMERCIAL

NO LEAD

UPPER

MLC NAND TYPE

69.85 mm

MTFDDAK480MAV-1AE12ABYY by Micron Technology

MTFDDAK480MAV-1AE12ABYY

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 22; Package Code: DIE; Package Shape: RECTANGULAR; Terminal Form: NO LEAD;

R-XUUC-N22

100.5 mm

FLASH

1

22

UNSPECIFIED

DIE

RECTANGULAR

UNCASED CHIP

3.3

7 mm

YES

CMOS

COMMERCIAL

NO LEAD

UPPER

MLC NAND TYPE

69.85 mm

MTFDDAK960MAV-1AE12ABYY by Micron Technology

MTFDDAK960MAV-1AE12ABYY

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 22; Package Code: DIE; Package Shape: RECTANGULAR; Terminal Form: NO LEAD;

R-XUUC-N22

100.5 mm

FLASH

1

22

UNSPECIFIED

DIE

RECTANGULAR

UNCASED CHIP

3.3

7 mm

YES

CMOS

COMMERCIAL

NO LEAD

UPPER

MLC NAND TYPE

69.85 mm

MTFDDAT120MAV-1AE12ABYY by Micron Technology

MTFDDAT120MAV-1AE12ABYY

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 52; Package Code: DIE; Package Shape: RECTANGULAR; Package Style (Meter): UNCASED CHIP;

R-XUUC-N52

50.8 mm

FLASH

1

52

UNSPECIFIED

DIE

RECTANGULAR

UNCASED CHIP

3.3

3.7 mm

YES

CMOS

COMMERCIAL

NO LEAD

UPPER

MLC NAND TYPE

29.85 mm

MTFDDAT240MAV-1AE12ABYY by Micron Technology

MTFDDAT240MAV-1AE12ABYY

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 52; Package Code: DIE; Package Shape: RECTANGULAR; Width: 29.85 mm;

R-XUUC-N52

50.8 mm

FLASH

1

52

UNSPECIFIED

DIE

RECTANGULAR

UNCASED CHIP

3.3

3.7 mm

YES

CMOS

COMMERCIAL

NO LEAD

UPPER

MLC NAND TYPE

29.85 mm

MTFC16GJDEC-4MIT by Micron Technology

MTFC16GJDEC-4MIT

Micron Technology

Micron Technology's MTFC16GJDEC-4MIT is a 16GX8 MLC NAND flash memory with 137.4Gb density, operating at 52MHz clock frequency. It features a very thin profile grid array package suitable for industrial applications requiring high-speed data storage and retrieval.

52 MHz

R-PBGA-B169

e1

18 mm

137438953472 bit

FLASH CARD

8

1

169

17179869184 words

16G

SYNCHRONOUS

85 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

VFBGA

BGA169,14X28,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

3.3

.8 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

MLC NAND TYPE

14 mm

MT29F8G08ABABAWP-IT:B by Micron Technology

MT29F8G08ABABAWP-IT:B

Micron Technology

Micron Technology's MT29F8G08ABABAWP-IT:B is a 3.3V SLC NAND flash memory with 1GX8 organization, 2K sectors, and 4K page size. It operates in industrial temperatures (-40 to 85 °C) with 100000 write/erase cycles endurance. Ideal for applications requiring high-density parallel memory storage.

YES

NO

10

100000 Write/Erase Cycles

R-PDSO-G48

e3

18.4 mm

8589934592 bit

FLASH

8

1

2K

48

1073741824 words

1G

ASYNCHRONOUS

85 Cel

-40 Cel

1GX8

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

4K

PARALLEL

YES

1.2 mm

512K

.00005 Amp

50 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.5 mm

DUAL

NO

SLC NAND TYPE

12 mm

LE25S80FDTWG by Onsemi

LE25S80FDTWG

Onsemi

LE25S80FDTWG by Onsemi is a 1MX8 NOR Flash Memory with 40 MHz clock frequency, operating at -40 to 90 °C. It has a supply voltage range of 1.65V to 1.95V and offers 8388608 bit memory density. Ideal for industrial applications requiring high-speed data storage in compact devices due to its small outline and thin profile package design.

40 MHz

R-PDSO-G8

e3

4.9 mm

8388608 bit

FLASH

8

3

1

8

1048576 words

1M

SYNCHRONOUS

90 Cel

-40 Cel

1MX8

PLASTIC/EPOXY

VSOP

RECTANGULAR

SMALL OUTLINE, VERY THIN PROFILE

SERIAL

1.8

.85 mm

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

Tin (Sn)

GULL WING

1.27 mm

DUAL

NOR TYPE

3.9 mm

LE25U81AFDTWG by Onsemi

LE25U81AFDTWG

Onsemi

LE25U81AFDTWG by Onsemi is a NOR type Flash Memory with 1Mx8 organization, operating at up to 40MHz clock frequency. It has a small outline package style, suitable for industrial applications requiring high memory density and low power consumption. With a wide temperature range of -40 to 85 °C, it offers reliable performance in various environments.

40 MHz

R-PDSO-G8

e3

4.9 mm

8388608 bit

FLASH

8

3

1

8

1048576 words

1M

SYNCHRONOUS

85 Cel

-40 Cel

1MX8

PLASTIC/EPOXY

VSOP

RECTANGULAR

SMALL OUTLINE, VERY THIN PROFILE

SERIAL

260

2.7

.85 mm

2.7 V

2.3 V

2.5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

30

NOR TYPE

3.9 mm

MT29F16G08ADACAH4-IT:C by Micron Technology

MT29F16G08ADACAH4-IT:C

Micron Technology

MT29F16G08ADACAH4-IT:C by Micron Technology is a 3.3V SLC NAND flash memory with 2GX8 organization, 4K page size, and 256K sector size. It operates in industrial temperature range (-40 to 85 °C) and has a parallel interface. Ideal for applications requiring fast access times and high memory density.

25 ns

YES

NO

R-PBGA-B63

11 mm

17179869184 bit

FLASH

8

1

8K

63

2147483648 words

2G

ASYNCHRONOUS

85 Cel

-40 Cel

2GX8

PLASTIC/EPOXY

VFBGA

BGA63,10X12,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

4K

PARALLEL

NOT SPECIFIED

3/3.3

2.7

Not Qualified

YES

1 mm

256K

.0001 Amp

Flash Memories

35 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

NO

SLC NAND TYPE

9 mm

SST25WF080B-40I/SN by Microchip Technology

SST25WF080B-40I/SN

Microchip Technology

SST25WF080B-40I/SN by Microchip: 8MX1 organization, 40MHz clock frequency, SPI serial bus type. Ideal for industrial applications requiring 8388608-bit memory density and 100000 write/erase cycles endurance.

40 MHz

20

100000 Write/Erase Cycles

R-PDSO-G8

e3

4.9 mm

8388608 bit

FLASH

1

1

1

8

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX1

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

1.8

AEC-Q100; TS 16949

1.75 mm

SPI

.00001 Amp

15 mA

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

NOR TYPE

3.9 mm

SOFTWARE

SST25WF080BT-40I/SN by Microchip Technology

SST25WF080BT-40I/SN

Microchip Technology

SST25WF080BT-40I/SN by Microchip: 8MX1 flash memory with 8388608 bit density, operates at 40 MHz clock frequency. Ideal for industrial applications requiring 100000 Write/Erase cycles, SPI serial bus interface, and -40 to 85 °C temperature range.

40 MHz

20

100000 Write/Erase Cycles

R-PDSO-G8

e3

4.9 mm

8388608 bit

FLASH

1

1

1

8

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX1

3-STATE

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

1.8

AEC-Q100; TS 16949

1.75 mm

SPI

.00001 Amp

15 mA

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

NOR TYPE

3.9 mm

SOFTWARE

N25Q256A13E1241E by Micron Technology

N25Q256A13E1241E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Memory Width: 1;

108 MHz

R-PBGA-B24

8 mm

268435456 bit

FLASH

1

1

24

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX1

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOR TYPE

6 mm

N25Q256A83E1241E by Micron Technology

N25Q256A83E1241E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 3;

108 MHz

R-PBGA-B24

8 mm

268435456 bit

FLASH

1

1

24

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX1

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOR TYPE

6 mm

N25Q256A83E1241F by Micron Technology

N25Q256A83E1241F

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Organization: 256MX1;

108 MHz

R-PBGA-B24

8 mm

268435456 bit

FLASH

1

1

24

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX1

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOR TYPE

6 mm

N25Q512A83G1241E by Micron Technology

N25Q512A83G1241E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

108 MHz

R-PBGA-B24

8 mm

536870912 bit

FLASH

1

1

24

536870912 words

512M

SYNCHRONOUS

85 Cel

-40 Cel

512MX1

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

3

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOR TYPE

6 mm

M29W256GSH70ZS6E by Micron Technology

M29W256GSH70ZS6E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: LBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 2.7 V;

70 ns

8

R-PBGA-B64

13 mm

268435456 bit

FLASH

16

1

64

16777216 words

16M

ASYNCHRONOUS

85 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

3

AEC-Q100

1.4 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOR TYPE

11 mm

M29W256GSL70ZS6E by Micron Technology

M29W256GSL70ZS6E

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: LBGA; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel;

70 ns

8

R-PBGA-B64

13 mm

268435456 bit

FLASH

16

1

64

16777216 words

16M

ASYNCHRONOUS

85 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

3

AEC-Q100

1.4 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOR TYPE

11 mm

M29W256GSL70ZS6F by Micron Technology

M29W256GSL70ZS6F

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: LBGA; Package Shape: RECTANGULAR; No. of Words: 16777216 words;

70 ns

8

R-PBGA-B64

13 mm

268435456 bit

FLASH

16

1

64

16777216 words

16M

ASYNCHRONOUS

85 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

3

AEC-Q100

1.4 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOR TYPE

11 mm

N25Q064A13ESF42G by Micron Technology

N25Q064A13ESF42G

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 16; Package Code: SOP; Package Shape: RECTANGULAR; Package Style (Meter): SMALL OUTLINE;

108 MHz

R-PDSO-G16

10.3 mm

67108864 bit

FLASH

1

1

16

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX1

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

SERIAL

2.7

2.65 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOR TYPE

7.5 mm

M25P16-VMN6PBA by Micron Technology

M25P16-VMN6PBA

Micron Technology

M25P16-VMN6PBA by Micron Technology is a 2MX8 NOR type flash memory with 75 MHz clock frequency. It operates at -40 to 85 °C and has 100000 Write/Erase Cycles endurance. Ideal for industrial applications requiring high-speed synchronous operation in compact designs.

75 MHz

20

100000 Write/Erase Cycles

R-PDSO-G8

4.9 mm

16777216 bit

FLASH

8

1

8

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

NOT SPECIFIED

3/3.3

2.7

Not Qualified

1.75 mm

SPI

.00001 Amp

Flash Memories

15 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

NOR TYPE

3.9 mm

HARDWARE/SOFTWARE

M25P16-VMN6YPBA by Micron Technology

M25P16-VMN6YPBA

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Serial Bus Type: SPI;

75 MHz

20

100000 Write/Erase Cycles

R-PDSO-G8

4.9 mm

16777216 bit

FLASH

8

1

8

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

NOT SPECIFIED

3/3.3

2.7

Not Qualified

1.75 mm

SPI

.00001 Amp

Flash Memories

15 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

NOR TYPE

3.9 mm

HARDWARE/SOFTWARE

MT28GU256AAA2EGC-0AAT by Micron Technology

MT28GU256AAA2EGC-0AAT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Organization: 16MX16;

133 MHz

R-PBGA-B64

10 mm

268435456 bit

FLASH

16

1

64

16777216 words

16M

SYNCHRONOUS

105 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

NOT SPECIFIED

1.8

AEC-Q100

1.2 mm

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

8 mm

MT28GU512AAA2EGC-0AAT by Micron Technology

MT28GU512AAA2EGC-0AAT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Parallel or Serial: PARALLEL;

133 MHz

R-PBGA-B64

10 mm

536870912 bit

FLASH

16

1

64

33554432 words

32M

SYNCHRONOUS

105 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

NOT SPECIFIED

1.8

AEC-Q100

1.2 mm

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

8 mm

N25Q512A81GSF40G by Micron Technology

N25Q512A81GSF40G

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 16; Package Code: SOP; Package Shape: RECTANGULAR; No. of Functions: 1;

108 MHz

R-PDSO-G16

10.3 mm

536870912 bit

FLASH

1

1

16

536870912 words

512M

SYNCHRONOUS

85 Cel

-40 Cel

512MX1

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

SERIAL

1.8

2.65 mm

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOR TYPE

7.5 mm

MT28F008B3VG-9B by Micron Technology

MT28F008B3VG-9B

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 40; Package Code: TSOP1; Package Shape: RECTANGULAR; Type: NOR TYPE;

90 ns

100,000 ERASE CYCLES; BOTTOM BOOT BLOCK

BOTTOM

YES

NO

R-PDSO-G40

e0

18.4 mm

8388608 bit

FLASH

8

1

1,2,1,7

40

1048576 words

1M

ASYNCHRONOUS

70 Cel

0 Cel

1MX8

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP40,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3.3

3

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

10 mm

MT28F008B3VG-9T by Micron Technology

MT28F008B3VG-9T

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 40; Package Code: TSOP1; Package Shape: RECTANGULAR; Length: 18.4 mm;

90 ns

100,000 ERASE CYCLES; TOP BOOT BLOCK

TOP

YES

NO

R-PDSO-G40

e0

18.4 mm

8388608 bit

FLASH

8

1

1,2,1,7

40

1048576 words

1M

ASYNCHRONOUS

70 Cel

0 Cel

1MX8

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP40,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3.3

3

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

10 mm

MT28F008B3VG-9BET by Micron Technology

MT28F008B3VG-9BET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 40; Package Code: TSOP1; Package Shape: RECTANGULAR; Package Equivalence Code: TSSOP40,.8,20;

90 ns

100,000 ERASE CYCLES; BOTTOM BOOT BLOCK

BOTTOM

YES

NO

R-PDSO-G40

e0

18.4 mm

8388608 bit

FLASH

8

1

1,2,1,7

40

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX8

3-STATE

PLASTIC/EPOXY

TSOP1

TSSOP40,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3.3

3

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

10 mm

AT49LV002-90TC by Atmel

AT49LV002-90TC

Atmel

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 32; Package Code: TSOP1; Package Shape: RECTANGULAR; Terminal Finish: TIN LEAD;

90 ns

BOTTOM

YES

YES

R-PDSO-G32

e0

18.4 mm

2097152 bit

FLASH

8

3

1

1,2,1,1

32

262144 words

256K

ASYNCHRONOUS

70 Cel

0 Cel

256KX8

PLASTIC/EPOXY

TSOP1

TSSOP32,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

240

3.3

3

Not Qualified

1.2 mm

16K,8K,96K,128K

.00005 Amp

Flash Memories

50 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

YES

NOR TYPE

8 mm

TMS29F040-90C5FML by Texas Instruments

TMS29F040-90C5FML

Texas Instruments

TMS29F040-90C5FML by Texas Instruments is a 512Kx8 NOR flash memory chip with 3-STATE output. Operating at 5V, it offers 100000 Write/Erase Cycles endurance and has a max access time of 90ns. Ideal for applications requiring fast, reliable data storage in commercial temperature environments.

90 ns

100000 PROGRAM/ERASE CYCLES

YES

YES

100000 Write/Erase Cycles

R-PQCC-J32

13.97 mm

4194304 bit

FLASH

8

1

8

32

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

NOT SPECIFIED

5

5

Not Qualified

3.56 mm

64K

.0001 Amp

Flash Memories

60 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

J BEND

1.27 mm

QUAD

NOT SPECIFIED

YES

NOR TYPE

11.43 mm

MT28F800B3SG-9BET by Micron Technology

MT28F800B3SG-9BET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 44; Package Code: SOP; Package Shape: RECTANGULAR; Memory Width: 16;

90 ns

100,000 ERASE CYCLES; BOTTOM BOOT BLOCK

8

BOTTOM

YES

NO

100000 Write/Erase Cycles

R-PDSO-G44

e0

28.02 mm

8388608 bit

FLASH

16

1

1,2,1,7

44

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

SOP

SOP44,.63

RECTANGULAR

SMALL OUTLINE

PARALLEL

3.3

3

Not Qualified

2.8 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

NO

NOR TYPE

12.6 mm

MT28F800B3SG-9B by Micron Technology

MT28F800B3SG-9B

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 44; Package Code: SOP; Package Shape: RECTANGULAR; Programming Voltage (V): 3;

90 ns

100,000 ERASE CYCLES; BOTTOM BOOT BLOCK

8

BOTTOM

YES

NO

100000 Write/Erase Cycles

R-PDSO-G44

e0

28.02 mm

8388608 bit

FLASH

16

1

1,2,1,7

44

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX16

PLASTIC/EPOXY

SOP

SOP44,.63

RECTANGULAR

SMALL OUTLINE

PARALLEL

3.3

3

Not Qualified

2.8 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

NO

NOR TYPE

12.6 mm

MT28F800B3SG-9TET by Micron Technology

MT28F800B3SG-9TET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 44; Package Code: SOP; Package Shape: RECTANGULAR; Terminal Position: DUAL;

90 ns

100,000 ERASE CYCLES; TOP BOOT BLOCK

8

TOP

YES

NO

100000 Write/Erase Cycles

R-PDSO-G44

e0

28.02 mm

8388608 bit

FLASH

16

1

1,2,1,7

44

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

SOP

SOP44,.63

RECTANGULAR

SMALL OUTLINE

PARALLEL

3.3

3

Not Qualified

2.8 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

NO

NOR TYPE

12.6 mm

MT28F800B3SG-9T by Micron Technology

MT28F800B3SG-9T

Micron Technology

MT28F800B3SG-9T by Micron Technology is a 512KX16 NOR flash memory with 8388608 bit density. It operates at 3.3V, has 100000 Write/Erase Cycles endurance, and offers fast access time of 90 ns. Ideal for applications requiring high-speed data storage in small outline packages.

90 ns

100,000 ERASE CYCLES; TOP BOOT BLOCK

8

TOP

YES

NO

100000 Write/Erase Cycles

R-PDSO-G44

e0

28.02 mm

8388608 bit

FLASH

16

1

1,2,1,7

44

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX16

PLASTIC/EPOXY

SOP

SOP44,.63

RECTANGULAR

SMALL OUTLINE

PARALLEL

3.3

3

Not Qualified

2.8 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

NO

NOR TYPE

12.6 mm

MT28F800B3WG-9BET by Micron Technology

MT28F800B3WG-9BET

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Terminal Pitch: .5 mm;

90 ns

100,000 ERASE CYCLES; BOTTOM BOOT BLOCK

8

BOTTOM

YES

NO

100000 Write/Erase Cycles

R-PDSO-G48

e0

18.4 mm

8388608 bit

FLASH

16

1

1,2,1,7

48

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3.3

3

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

12 mm

MT28F800B3WG-9B by Micron Technology

MT28F800B3WG-9B

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Package Style (Meter): SMALL OUTLINE, THIN PROFILE;

90 ns

100,000 ERASE CYCLES; BOTTOM BOOT BLOCK

8

BOTTOM

YES

NO

100000 Write/Erase Cycles

R-PDSO-G48

e0

18.4 mm

8388608 bit

FLASH

16

1

1,2,1,7

48

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3.3

3

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

12 mm

MT28F800B3WG-9TET by Micron Technology

MT28F800B3WG-9TET

Micron Technology

MT28F800B3WG-9TET by Micron Technology is a NOR flash memory with 512KX16 organization, 8388608 bit memory density, and 100000 Write/Erase Cycles endurance. It operates at -40 to 85 °C, has a programming voltage of 3V, and is suitable for industrial applications requiring fast access times and high reliability.

90 ns

100,000 ERASE CYCLES; TOP BOOT BLOCK

8

TOP

YES

NO

100000 Write/Erase Cycles

R-PDSO-G48

e0

18.4 mm

8388608 bit

FLASH

16

1

1,2,1,7

48

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3.3

3

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

12 mm

MT28F800B3WG-9T by Micron Technology

MT28F800B3WG-9T

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Power Supplies (V): 3.3;

90 ns

100,000 ERASE CYCLES; TOP BOOT BLOCK

8

TOP

YES

NO

100000 Write/Erase Cycles

R-PDSO-G48

e0

18.4 mm

8388608 bit

FLASH

16

1

1,2,1,7

48

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX16

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3.3

3

Not Qualified

1.2 mm

16K,8K,96K,128K

.000005 Amp

Flash Memories

25 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

NO

NOR TYPE

12 mm