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MT29F16G08ADACAH4-IT:C

Micron Technology

MT29F16G08ADACAH4-IT:C by Micron Technology

MT29F16G08ADACAH4-IT:C by Micron Technology is a 3.3V SLC NAND flash memory with 2GX8 organization, 4K page size, and 256K sector size. It operates in industrial temperature range (-40 to 85 °C) and has a parallel interface. Ideal for applications requiring fast access times and high memory density.

Median Price

-

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,026 parts In-Stock

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6,026

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Chip Stock

USA . 4,640 parts In-Stock

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4,640

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Digiode

USA . 1,994 parts In-Stock

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1,994

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Bristol Electronics

USA . 687 parts In-Stock

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Nova Conductors

Japan . 29 parts In-Stock

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29

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QIE Inc.

USA . 2 parts In-Stock

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2

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 554 parts In-Stock

1+ parts

$10.900

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554

$10.900

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Ampacity Inc.

Singapore . 709 parts In-Stock

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$27.000

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709

$27.000

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Aranea Global

USA . 2,000 parts In-Stock

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2,000

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Corphita

USA . 763 parts In-Stock

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Microchip USA

USA . 327 parts In-Stock

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327

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Overview

Elevate your product's performance with the MT29F16G08ADACAH4-IT:C by Micron Technology. As a leader in flash memory technology, Micron delivers unparalleled quality and reliability in every product. This flash memory device is perfect for various applications, offering fast access times and low power consumption. With a wide temperature range and compact design, the MT29F16G08ADACAH4-IT:C provides exceptional value and benefits to customers seeking top-notch storage solutions. Experience the advantage of cutting-edge technology with Micron's MT29F16G08ADACAH4-IT:C.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used in the package body provides durability and protection for the flash memory, making it a reliable choice for various applications.

Surface Mount: YES

The surface mount capability allows for easy and secure installation of the flash memory on circuit boards, making it convenient for assembly and manufacturing processes.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode enables efficient data transfer and access, enhancing the performance and speed of the flash memory.

Nominal Supply Voltage / Vsup (V): 3.3

The 3.3V nominal supply voltage ensures stable and consistent power delivery to the flash memory, optimizing its performance and reliability.

No. of Sectors/Size: 8K

With 8K sectors, the flash memory can efficiently store and manage data in smaller segments, improving data organization and access times.

Memory IC Type: FLASH

Being a flash memory IC type, this product offers non-volatile storage capabilities, allowing data to be retained even when power is removed, making it suitable for various applications.

Maximum Standby Current: 0.0001 Amp

The low standby current consumption of 0.0001 Amp helps in minimizing power usage when the flash memory is not actively in use, contributing to energy efficiency.

Maximum Access Time: 25 ns

With a maximum access time of 25 ns, the flash memory offers quick data retrieval speeds, ensuring efficient performance in demanding applications.

Technical Specifications

Flash Memory MT29F16G08ADACAH4-IT:C attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

25 ns

Command User Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PBGA-B63

Length:

11 mm

Memory Density:

17179869184 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Sectors/Size:

8K

No. of Terminals:

63

No. of Words:

2147483648 words

No. of Words Code:

2G

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

2GX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA63,10X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Page Size (words):

4K

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3/3.3

Programming Voltage (V):

2.7

Qualification:

Not Qualified

Ready or Busy:

YES

Maximum Seated Height:

1 mm

Sector Size (Words):

256K

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

35 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Toggle Bit:

NO

Type:

SLC NAND TYPE

Width:

9 mm

Trade Compliance

MT29F16G08ADACAH4-IT:C Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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