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SST25WF080BT-40I/SN

Microchip Technology

SST25WF080BT-40I/SN by Microchip Technology

SST25WF080BT-40I/SN by Microchip: 8MX1 flash memory with 8388608 bit density, operates at 40 MHz clock frequency. Ideal for industrial applications requiring 100000 Write/Erase cycles, SPI serial bus interface, and -40 to 85 °C temperature range.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,139 parts In-Stock

1+ parts

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5,139

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Nova Conductors

Japan . 750 parts In-Stock

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750

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Chip Stock

USA . 195 parts In-Stock

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195

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 747 parts In-Stock

1+ parts

$1.800

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747

$1.800

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Aztec Data Supply Inc.

USA . 4,235 parts In-Stock

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$4.800

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4,235

$4.800

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AZTECH Wire

Italy . 614 parts In-Stock

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$5.615

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614

$5.615

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Semicontronic

India . 1,170 parts In-Stock

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$11.000

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$10.725

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$10.670

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1,170

$11.000

$10.725

$10.670

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Ampacity Inc.

Singapore . 1,445 parts In-Stock

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$25.000

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1,445

$25.000

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Lixinc

USA . 5,720 parts In-Stock

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5,720

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Continental Prestige Electronics

USA . 5,265 parts In-Stock

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5,265

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Argo Parts USA

USA . 4,578 parts In-Stock

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4,578

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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3,000

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Fulton Briggs Corp.

USA . 314 parts In-Stock

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314

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Bastille Electronics

Australia . 40 parts In-Stock

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40

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Overview

Unlock the power of reliable and high-performance flash memory with the SST25WF080BT-40I/SN by Microchip Technology. As a trusted manufacturer in the industry, Microchip Technology delivers top-quality products like this one that are perfect for a wide range of applications. From automotive to industrial, this flash memory offers superior value, benefits, and advantages to customers looking for efficient data storage solutions. Trust in Microchip Technology to provide cutting-edge technology that meets your needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for portable devices.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for faster data transfer rates, enhancing overall performance.

Nominal Supply Voltage / Vsup (V): 1.8

Low power consumption at 1.8V makes this product energy efficient and suitable for battery-powered applications.

No. of Terminals: 8

Having a small number of terminals simplifies the installation process and reduces the risk of wiring errors.

Temperature Grade: INDUSTRIAL

Industrial-grade temperature range (-40°C to 85°C) ensures reliable operation in harsh environmental conditions.

Endurance: 100000 Write/Erase Cycles

High endurance of 100,000 write/erase cycles ensures long-lasting performance and data integrity.

Memory IC Type: FLASH

Being a Flash memory IC, this product offers non-volatile storage, allowing data to be retained even when power is removed.

Technical Specifications

Flash Memory SST25WF080BT-40I/SN attributes and parameters. Explore more Flash Memory devices from Microchip Technology

Specs

Maximum Clock Frequency (fCLK):

40 MHz

Minimum Data Retention Time:

20

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Length:

4.9 mm

Memory Density:

8388608 bit

Memory IC Type:

Memory Width:

1

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

8

No. of Words:

8388608 words

No. of Words Code:

8M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8MX1

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.23

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Programming Voltage (V):

1.8

Screening Level:

AEC-Q100; TS 16949

Maximum Seated Height:

1.75 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.00001 Amp

Maximum Supply Current:

15 mA

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Type:

NOR TYPE

Width:

3.9 mm

Write Protection:

SOFTWARE

Trade Compliance

SST25WF080BT-40I/SN Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.1.A

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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