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MT28F800B3SG-9T

Micron Technology

MT28F800B3SG-9T by Micron Technology

MT28F800B3SG-9T by Micron Technology is a 512KX16 NOR flash memory with 8388608 bit density. It operates at 3.3V, has 100000 Write/Erase Cycles endurance, and offers fast access time of 90 ns. Ideal for applications requiring high-speed data storage in small outline packages.

Median Price

-

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 22,000 parts In-Stock

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22,000

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Vyrian

USA . 7,217 parts In-Stock

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7,217

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Bristol Electronics

USA . 1,280 parts In-Stock

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1,280

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Dan-Mar Components

USA . 1,280 parts In-Stock

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1,280

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ACDS - Activité Composants Distribution Service

France . 1,000 parts In-Stock

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1,000

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Nova Conductors

Japan . 500 parts In-Stock

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500

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Digiode

USA . 305 parts In-Stock

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305

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,614 parts In-Stock

1+ parts

$5.000

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1,614

$5.000

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Andel Nordic

Denmark . 3,107 parts In-Stock

1+ parts

$8.036

100+ parts

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$7.714

10k+ parts

$7.714

3,107

$8.036

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$7.714

$7.714

AZTECH Wire

Italy . 342 parts In-Stock

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$10.300

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342

$10.300

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Component Stockers USA

USA . 579 parts In-Stock

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$99.990

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579

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Argo Parts USA

USA . 3,548 parts In-Stock

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Continental Prestige Electronics

USA . 2,574 parts In-Stock

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Corphita

USA . 1,520 parts In-Stock

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Microchip USA

USA . 302 parts In-Stock

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Aranea Global

USA . 50 parts In-Stock

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50

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Overview

Experience the cutting-edge performance of Micron Technology's MT28F800B3SG-9T Flash Memory. Designed with quality and precision, this small outline memory device offers customers unmatched value and benefits. With a wide range of applications in various industries, this product provides reliable storage solutions for your data needs. Trust in Micron Technology's expertise and innovation to enhance your electronic devices with the MT28F800B3SG-9T Flash Memory.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material makes the product lightweight and durable, ideal for portable devices.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for independent, non-overlapping read and write operations, improving overall performance.

Nominal Supply Voltage (V): 3.3

The 3.3V supply voltage is common and widely available, making integration into existing systems easier.

No. of Terminals: 44

Having 44 terminals provides ample connectivity options and flexibility for interfacing with other components.

Memory Density: 8388608 bit

High memory density allows for storing a large amount of data in a compact form factor, perfect for memory-intensive applications.

Technical Specifications

Flash Memory MT28F800B3SG-9T attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

90 ns

Additional Features:

100,000 ERASE CYCLES; TOP BOOT BLOCK

Alternate Memory Width:

8

Boot Block:

TOP

Command User Interface:

YES

Data Polling:

NO

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G44

JESD-609 Code:

e0

Length:

28.02 mm

Memory Density:

8388608 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Sectors/Size:

1,2,1,7

No. of Terminals:

44

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512KX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP44,.63

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

PARALLEL

Power Supplies (V):

3.3

Programming Voltage (V):

3

Qualification:

Not Qualified

Maximum Seated Height:

2.8 mm

Sector Size (Words):

16K,8K,96K,128K

Maximum Standby Current:

.000005 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

25 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Toggle Bit:

NO

Type:

NOR TYPE

Width:

12.6 mm

Trade Compliance

MT28F800B3SG-9T Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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