Loading...

MTFC128GAPALNS-AIT

Micron Technology

MTFC128GAPALNS-AIT by Micron Technology

MTFC128GAPALNS-AIT by Micron Technology is a 128GX8 flash memory with 1099511627776 bit density. Operating in synchronous mode, it has a temperature range of -40 to 85 °C and supports industrial applications. With a thin profile and fine pitch package style, it features 153 terminals in a grid array shape for surface mount assembly.

Median Price

$155.388

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 900 parts In-Stock

1+ parts

$155.388

100+ parts

-

1k+ parts

-

10k+ parts

-

900

$155.388

-

-

-

Chip Stock

USA . 12,100 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

12,100

-

-

-

-

Vyrian

USA . 2,355 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,355

-

-

-

-

Digiode

USA . 2,194 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,194

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 181 parts In-Stock

1+ parts

$3.988

100+ parts

-

1k+ parts

-

10k+ parts

-

181

$3.988

-

-

-

Aztec Data Supply Inc.

USA . 200 parts In-Stock

1+ parts

$5.610

100+ parts

-

1k+ parts

-

10k+ parts

-

200

$5.610

-

-

-

AZTECH Wire

Italy . 442 parts In-Stock

1+ parts

$12.576

100+ parts

-

1k+ parts

-

10k+ parts

-

442

$12.576

-

-

-

Ampacity Inc.

Singapore . 281 parts In-Stock

1+ parts

$24.000

100+ parts

-

1k+ parts

-

10k+ parts

-

281

$24.000

-

-

-

Semicontronic

India . 242 parts In-Stock

1+ parts

$26.000

100+ parts

$25.350

1k+ parts

$25.220

10k+ parts

-

242

$26.000

$25.350

$25.220

-

Continental Prestige Electronics

USA . 5,363 parts In-Stock

1+ parts

$155.388

100+ parts

-

1k+ parts

-

10k+ parts

$152.280

5,363

$155.388

-

-

$152.280

Netroflash

USA . 2,000 parts In-Stock

1+ parts

$155.388

100+ parts

-

1k+ parts

$147.619

10k+ parts

$144.511

2,000

$155.388

-

$147.619

$144.511

Argo Parts USA

USA . 4,512 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,512

-

-

-

-

Corphita

USA . 1,238 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,238

-

-

-

-

Microchip USA

USA . 251 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

251

-

-

-

-

Overview

Enhance your devices with the cutting-edge MTFC128GAPALNS-AIT by Micron Technology. As a leading manufacturer in the flash memory category, Micron Technology delivers top-quality products that guarantee superior performance and reliability. This flash memory offers unmatched value to customers, providing lightning-fast data storage and retrieval capabilities. Whether you're looking to upgrade your smartphone, tablet, or other electronic devices, the MTFC128GAPALNS-AIT is the perfect solution for seamless operation and enhanced user experience. Trust Micron Technology to elevate your technology to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the flash memory, making it suitable for various environments.

Surface Mount: YES

Ease of installation and space-saving design for convenient integration into electronic devices.

Operating Mode: SYNCHRONOUS

Enhanced performance and efficiency in data transfer operations.

Maximum Operating Temperature: 85 °C

Allows reliable operation even in high-temperature conditions.

Organization: 128GX8

Organized in a specific manner for efficient data storage and retrieval.

Minimum Supply Voltage (Vsup): 2.7 V

Low power consumption and efficient energy usage.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high-speed operation.

Memory Density: 1099511627776 bit

High memory density allows for storing large amounts of data in a compact form.

Technical Specifications

Flash Memory MTFC128GAPALNS-AIT attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

JESD-30 Code:

R-PBGA-B153

JESD-609 Code:

e1

Length:

13 mm

Memory Density:

1099511627776 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

153

No. of Words:

137438953472 words

No. of Words Code:

128G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128GX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

2.7

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

11.5 mm

Trade Compliance

MTFC128GAPALNS-AIT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 21