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MTFC8GLWDQ-3MAITZ

Micron Technology

MTFC8GLWDQ-3MAITZ by Micron Technology

MTFC8GLWDQ-3MAITZ by Micron Technology is a NAND flash memory with 8GX8 organization, 52 MHz clock frequency, and 85°C max operating temp. Ideal for industrial applications requiring high-density storage in a compact form factor.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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Avnet

USA . 2,000 parts In-Stock

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Chip Stock

USA . 19,700 parts In-Stock

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Vyrian

USA . 5,488 parts In-Stock

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Digiode

USA . 793 parts In-Stock

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Bristol Electronics

USA . 40 parts In-Stock

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Nova Conductors

Japan . 40 parts In-Stock

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40

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Ampacity Inc.

Singapore . 753 parts In-Stock

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$4.000

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753

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AZTECH Wire

Italy . 90 parts In-Stock

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$15.850

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90

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A-Z Elektronik GmbH

Germany . 5,553 parts In-Stock

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Perfect Parts

USA . 3,293 parts In-Stock

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RC Electronics

USA . 1,626 parts In-Stock

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Corphita

USA . 1,138 parts In-Stock

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Kepictronics

USA . 980 parts In-Stock

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Microchip USA

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Aranea Global

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Overview

Discover the superior performance and reliability of the MTFC8GLWDQ-3MAITZ by Micron Technology, a top-of-the-line flash memory solution perfect for a wide range of applications. With its cutting-edge technology and innovative design, this product offers unparalleled value to customers seeking high-quality memory solutions. Whether you're looking to enhance the speed and efficiency of your devices or store critical data with peace of mind, the MTFC8GLWDQ-3MAITZ provides the perfect blend of quality, performance, and durability. Experience the difference with Micron Technology's premium flash memory solution today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the flash memory, ensuring longevity and reliability.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for precise timing and efficient data transfer, enhancing performance.

Maximum Clock Frequency (fCLK): 52 MHz

High clock frequency enables fast data processing and access speeds, making this flash memory suitable for quick data retrieval.

Minimum Supply Voltage (Vsup): 2.7 V

Low minimum supply voltage helps in saving power and ensures efficient operation.

Technology: CMOS

CMOS technology provides low power consumption and high noise immunity, contributing to the overall reliability of the flash memory.

Memory Density: 68719476736 bit

High memory density allows for storing a large amount of data in a compact form factor, making it ideal for applications requiring high storage capacity.

Technical Specifications

Flash Memory MTFC8GLWDQ-3MAITZ attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

52 MHz

JESD-30 Code:

R-PBGA-B100

Length:

18 mm

Memory Density:

68719476736 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

100

No. of Words:

8589934592 words

No. of Words Code:

8G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8GX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA100,10X17,40

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Seated Height:

1.703 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Type:

NAND TYPE

Width:

14 mm

Trade Compliance

MTFC8GLWDQ-3MAITZ Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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