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MT29F16G08ADBCAH4-IT:C

Micron Technology

MT29F16G08ADBCAH4-IT:C by Micron Technology

MT29F16G08ADBCAH4-IT:C by Micron Technology is a Flash Memory with 2GX8 organization, 8K sectors, and 4K page size. It is used in industrial applications with a temperature range of -40 to 85 °C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,679 parts In-Stock

1+ parts

-

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1k+ parts

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7,679

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-

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Digiode

USA . 1,207 parts In-Stock

1+ parts

-

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1k+ parts

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1,207

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Netsource Technology, Inc.

USA . 39 parts In-Stock

1+ parts

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100+ parts

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39

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Nova Conductors

Japan . 10 parts In-Stock

1+ parts

-

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1k+ parts

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10

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Andel Nordic

Denmark . 420 parts In-Stock

1+ parts

$3.224

100+ parts

-

1k+ parts

$3.095

10k+ parts

$3.095

420

$3.224

-

$3.095

$3.095

Ampacity Inc.

Singapore . 1,307 parts In-Stock

1+ parts

$5.000

100+ parts

-

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1,307

$5.000

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AZTECH Wire

Italy . 589 parts In-Stock

1+ parts

$16.433

100+ parts

-

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589

$16.433

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Corphita

USA . 2,234 parts In-Stock

1+ parts

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2,234

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Microchip USA

USA . 348 parts In-Stock

1+ parts

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348

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Aranea Global

USA . 100 parts In-Stock

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100+ parts

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1k+ parts

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100

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Overview

Experience the unparalleled quality and reliability of Micron Technology with the MT29F16G08ADBCAH4-IT:C Flash Memory. This cutting-edge product offers a multitude of applications, providing endless possibilities for its users. With Micron's exceptional manufacturing expertise, you can trust that this flash memory will exceed your expectations. Benefit from its value-packed features, including a wide temperature range, low power consumption, and high-density memory. Whether you're a tech enthusiast or a professional in need of reliable storage solutions, the MT29F16G08ADBCAH4-IT:C is the perfect choice for you. Upgrade your devices today and experience the advantages of Micron Technology firsthand.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material, ensuring the product is long-lasting and easy to handle.

Nominal Supply Voltage / Vsup (V): 1.8

Low power consumption, making it energy-efficient.

No. of Terminals: 63

Sufficient number of terminals for effective connectivity and data transfer.

Maximum Operating Temperature: 85 °C

Can operate in high-temperature environments without performance issues.

Organization: 2GX8

Efficient organization of memory capacity for optimum performance.

Memory IC Type: FLASH

Fast and reliable memory technology for quick data storage and retrieval.

Maximum Access Time: 30 ns

Quick access time ensures fast data processing and transfer speeds.

Technical Specifications

Flash Memory MT29F16G08ADBCAH4-IT:C attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Access Time:

30 ns

Command User Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PBGA-B63

Memory Density:

17179869184 bit

Memory IC Type:

Memory Width:

8

No. of Sectors/Size:

8K

No. of Terminals:

63

No. of Words:

2147483648 words

No. of Words Code:

2G

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

2GX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA63,10X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, FINE PITCH

Page Size (words):

4K

Parallel or Serial:

PARALLEL

Power Supplies (V):

1.8

Programming Voltage (V):

1.8

Qualification:

Not Qualified

Ready or Busy:

YES

Sector Size (Words):

256K

Maximum Standby Current:

.00005 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

20 mA

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Toggle Bit:

NO

Type:

SLC NAND TYPE

Trade Compliance

MT29F16G08ADBCAH4-IT:C Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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