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MT29F16G08ABCBBH1-12AIT:B

Micron Technology

MT29F16G08ABCBBH1-12AIT:B by Micron Technology

Micron Technology's MT29F16G08ABCBBH1-12AIT:B is a 2GX8 SLC NAND flash memory with 4K page size and 512K sector size. Operating at 3.3V, it offers industrial-grade endurance of 100k cycles. Suitable for applications requiring high-density, reliable storage solutions in industrial environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,824 parts In-Stock

1+ parts

-

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8,824

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Chip Stock

USA . 4,448 parts In-Stock

1+ parts

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4,448

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Digiode

USA . 2,142 parts In-Stock

1+ parts

-

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2,142

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Nova Conductors

Japan . 900 parts In-Stock

1+ parts

-

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900

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 290 parts In-Stock

1+ parts

$3.132

100+ parts

-

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290

$3.132

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Aztec Data Supply Inc.

USA . 2,406 parts In-Stock

1+ parts

$3.281

100+ parts

-

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2,406

$3.281

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AZTECH Wire

Italy . 202 parts In-Stock

1+ parts

$8.151

100+ parts

-

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202

$8.151

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Ampacity Inc.

Singapore . 875 parts In-Stock

1+ parts

$11.000

100+ parts

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875

$11.000

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Continental Prestige Electronics

USA . 6,272 parts In-Stock

1+ parts

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6,272

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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2,500

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Argo Parts USA

USA . 2,467 parts In-Stock

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2,467

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Corphita

USA . 1,741 parts In-Stock

1+ parts

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1,741

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Aranea Global

USA . 1,000 parts In-Stock

1+ parts

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100+ parts

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1,000

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Microchip USA

USA . 231 parts In-Stock

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231

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Overview

Experience the cutting-edge technology of Micron Technology with the MT29F16G08ABCBBH1-12AIT:B flash memory. This high-quality product offers unparalleled performance and reliability, making it ideal for a wide range of applications. Whether you're looking to boost the storage capacity of your devices or enhance their speed and efficiency, this flash memory has got you covered. Trust in Micron's expertise and innovation to take your projects to the next level. Unlock the potential of your devices with the MT29F16G08ABCBBH1-12AIT:B flash memory today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material provides durability and protection for the flash memory, making it a reliable choice for storage.

Operating Mode: ASYNCHRONOUS/SYNCHRONOUS

The ability to operate in both asynchronous and synchronous modes allows for versatile use in various applications, offering flexibility and compatibility.

Nominal Supply Voltage / Vsup (V): 3.3

The low nominal supply voltage of 3.3V ensures energy efficiency and helps in reducing power consumption, making it an environmentally friendly option.

Memory Density: 17179869184 bit

With a high memory density of 17179869184 bits, this flash memory chip offers ample storage capacity for data-intensive applications, making it suitable for high-performance computing.

Endurance: 100000 Write/Erase Cycles

The high endurance of 100000 write/erase cycles ensures longevity and reliability, making this flash memory chip suitable for frequent data read/write operations without wearing out quickly.

Technical Specifications

Flash Memory MT29F16G08ABCBBH1-12AIT:B attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Additional Features:

83MHZ CLOCK FREQUENCY IS AVAILABLE

Command User Interface:

YES

Data Polling:

NO

Minimum Data Retention Time:

10

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PBGA-B100

Length:

18 mm

Memory Density:

17179869184 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Sectors/Size:

4K

No. of Terminals:

100

No. of Words:

2147483648 words

No. of Words Code:

2G

Operating Mode:

ASYNCHRONOUS/SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

2GX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA100,10X17,40

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE

Page Size (words):

4K

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Programming Voltage (V):

3.3

Ready or Busy:

YES

Maximum Seated Height:

1 mm

Sector Size (Words):

512K

Maximum Standby Current:

.00005 Amp

Maximum Supply Current:

50 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Toggle Bit:

YES

Type:

SLC NAND TYPE

Width:

12 mm

Trade Compliance

MT29F16G08ABCBBH1-12AIT:B Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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