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MT29F1G08ABAFAH4-ITE:F

Micron Technology

MT29F1G08ABAFAH4-ITE:F by Micron Technology

Micron Technology's MT29F1G08ABAFAH4-ITE:F is a 128MX8 SLC NAND flash memory with 1073741824 bit memory density. Operating at 3.3V, it has a temperature range of -40 to 85 °C and uses parallel interface technology. Ideal for industrial applications requiring high-speed data storage in compact devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 3,111 parts In-Stock

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Cyclops Electronics Ltd

UK . 1,250 parts In-Stock

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Digiode

USA . 486 parts In-Stock

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Nova Conductors

Japan . 69 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 659 parts In-Stock

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$2.916

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659

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Ampacity Inc.

Singapore . 1,361 parts In-Stock

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$4.000

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Aztec Data Supply Inc.

USA . 1,201 parts In-Stock

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$4.350

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AZTECH Wire

Italy . 327 parts In-Stock

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$16.647

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Semicontronic

India . 1,431 parts In-Stock

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$25.000

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$24.375

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$24.250

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Continental Prestige Electronics

USA . 6,893 parts In-Stock

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Argo Parts USA

USA . 4,616 parts In-Stock

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Microchip USA

USA . 4,192 parts In-Stock

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Perfect Parts

USA . 2,822 parts In-Stock

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Corphita

USA . 2,209 parts In-Stock

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RC Electronics

USA . 1,200 parts In-Stock

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Bastille Electronics

Australia . 700 parts In-Stock

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Authorized Procurement Solutions

USA . 660 parts In-Stock

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Overview

Elevate your devices with the top-notch MT29F1G08ABAFAH4-ITE:F flash memory from Micron Technology. Renowned for their superior quality and cutting-edge technology, Micron delivers unmatched performance and reliability in every product. This versatile flash memory is perfect for a wide range of applications, offering lightning-fast data storage and seamless operation. With a sleek design and high durability, this flash memory guarantees optimal functionality for your devices. Upgrade to Micron's MT29F1G08ABAFAH4-ITE:F today and experience the difference in speed, efficiency, and overall performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material provides durability and protection for the flash memory, ensuring optimal performance and longevity.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at a nominal supply voltage of 3.3V allows for efficient power consumption and compatibility with various systems.

Organization: 128MX8

The 128MX8 organization offers a high level of memory organization and storage capacity ideal for a wide range of applications.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, this flash memory can withstand high heat conditions, ensuring reliability in challenging environments.

Technology: CMOS

Utilizing CMOS technology provides low power consumption and high-speed operation, making this flash memory a reliable and efficient choice.

Technical Specifications

Flash Memory MT29F1G08ABAFAH4-ITE:F attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

JESD-30 Code:

R-PBGA-B63

Length:

11 mm

Memory Density:

1073741824 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

63

No. of Words:

134217728 words

No. of Words Code:

128M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Programming Voltage (V):

3.3

Maximum Seated Height:

1 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Type:

SLC NAND TYPE

Width:

9 mm

Trade Compliance

MT29F1G08ABAFAH4-ITE:F Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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