Loading...

MT35XU02GCBA1G12-0AUTTR

Micron Technology

MT35XU02GCBA1G12-0AUTTR by Micron Technology

Micron Technology's MT35XU02GCBA1G12-0AUTTR is a 256MX8 NOR flash memory with 200 MHz clock frequency, 1.8V programming voltage, and 100K write/erase cycles. It operates in serial mode via SPI bus, suitable for automotive applications due to AEC-Q100 screening and -40 to 125°C temperature range.

Median Price

$44.894

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$53.290

5,000

-

-

-

$53.290

Verical

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$36.499

5,000

-

-

-

$36.499

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,024 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,024

-

-

-

-

Digiode

USA . 2,265 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,265

-

-

-

-

Nova Conductors

Japan . 750 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

750

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 306 parts In-Stock

1+ parts

$13.030

100+ parts

-

1k+ parts

-

10k+ parts

-

306

$13.030

-

-

-

Ampacity Inc.

Singapore . 4,524 parts In-Stock

1+ parts

$31.020

100+ parts

-

1k+ parts

-

10k+ parts

-

4,524

$31.020

-

-

-

Microchip USA

USA . 2,752 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,752

-

-

-

-

Corphita

USA . 2,319 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,319

-

-

-

-

Aranea Global

USA . 100 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

100

-

-

-

-

Overview

Unlock the power of reliable and high-performance flash memory with the MT35XU02GCBA1G12-0AUTTR by Micron Technology. Known for its quality and innovation, Micron Technology brings you a cutting-edge solution that is perfect for a wide range of applications. Whether you're looking to upgrade your device's storage or improve its speed, this flash memory offers unmatched value, benefits, and advantages. Trust Micron Technology to deliver superior products that will enhance your user experience.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic material provides durability and protection, making the product suitable for various environments.

Surface Mount: YES

Allows for easy and efficient installation on PCBs, saving assembly time.

Screening Level: AEC-Q100

Compliance with automotive quality standards ensures reliability and performance in automotive applications.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for faster data transfer speeds and improved performance.

Nominal Supply Voltage (V): 1.8

Low power supply voltage helps in reducing power consumption and extending battery life in portable devices.

Package Style (Meter): GRID ARRAY, THIN PROFILE

Thin profile package saves space and allows for high-density mounting on PCBs.

Maximum Operating Temperature: 125 °C

Wide operating temperature range makes the product suitable for use in harsh environments.

Organization: 256MX8

High organization allows for efficient data storage and retrieval, enhancing system performance.

Write Protection: HARDWARE

Hardware write protection ensures data security and prevents accidental data loss.

Maximum Clock Frequency (fCLK): 200 MHz

High clock frequency enables fast data access and processing.

Memory Density: 2147483648 bit

High memory density provides ample storage capacity for storing large amounts of data.

Technical Specifications

Flash Memory MT35XU02GCBA1G12-0AUTTR attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

200 MHz

Minimum Data Retention Time:

20

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PBGA-B24

JESD-609 Code:

e1

Length:

8 mm

Memory Density:

2147483648 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

24

No. of Words:

268435456 words

No. of Words Code:

256M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA24,5X5,40

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

1.8

Screening Level:

AEC-Q100

Maximum Seated Height:

1.2 mm

Serial Bus Type:

SPI

Maximum Supply Voltage (Vsup):

2 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Type:

NOR TYPE

Width:

6 mm

Write Protection:

HARDWARE

Trade Compliance

MT35XU02GCBA1G12-0AUTTR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20