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MT29F8G08ABACAH4:C

Micron Technology

MT29F8G08ABACAH4:C by Micron Technology

Micron Technology's MT29F8G08ABACAH4:C is a 3.3V SLC NAND flash memory with 1GX8 organization, 4K page size, and 256K sector size. It operates in asynchronous mode with a max temperature of 70°C. Ideal for applications requiring high-speed data storage and retrieval in commercial-grade environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 5,454 parts In-Stock

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Vyrian

USA . 4,827 parts In-Stock

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4,827

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Digiode

USA . 1,854 parts In-Stock

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Semi Source

USA . 859 parts In-Stock

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Nova Conductors

Japan . 100 parts In-Stock

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100

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Cyclops Electronics Ltd

UK . 2 parts In-Stock

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Andel Nordic

Denmark . 2,034 parts In-Stock

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$10.975

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$10.536

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$10.536

2,034

$10.975

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$10.536

$10.536

AZTECH Wire

Italy . 1,001 parts In-Stock

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$16.790

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$16.790

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Ampacity Inc.

Singapore . 1,519 parts In-Stock

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$17.000

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QUARKTWIN TECHNOLOGY LTD

USA . 9,984 parts In-Stock

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A-Z Elektronik GmbH

Germany . 7,224 parts In-Stock

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Aranea Global

USA . 2,000 parts In-Stock

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Metaverse IC Inc.

Canada . 1,700 parts In-Stock

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Corphita

USA . 1,019 parts In-Stock

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Kepictronics

USA . 770 parts In-Stock

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Microchip USA

USA . 123 parts In-Stock

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123

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Overview

Unlock the power of cutting-edge technology with the MT29F8G08ABACAH4:C by Micron Technology. This high-quality flash memory device offers unparalleled reliability and performance, making it the perfect solution for a wide range of applications. With its advanced features and innovative design, this product provides customers with exceptional value, benefits, and advantages. Trust Micron Technology to deliver superior products that exceed expectations and elevate your experience in the world of memory storage.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material makes the package lightweight and durable, perfect for portable devices.

Surface Mount: YES

Surface mount technology allows for easy and efficient PCB assembly, saving time and space.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at 3.3V provides a balance between power consumption and performance for various applications.

No. of Terminals: 63

With 63 terminals, this flash memory chip offers a high level of connectivity for data transfer.

Organization: 1GX8

Organized as 1GX8, this flash memory chip offers a high capacity storage solution with efficient data retrieval.

Technology: CMOS

CMOS technology ensures low power consumption and high speed operation, ideal for battery-powered devices.

Memory IC Type: FLASH

Being a FLASH memory IC type, this product offers non-volatile storage with fast read and write speeds.

Technical Specifications

Flash Memory MT29F8G08ABACAH4:C attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Command User Interface:

YES

Data Polling:

NO

JESD-30 Code:

R-PBGA-B63

Length:

11 mm

Memory Density:

8589934592 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Sectors/Size:

4K

No. of Terminals:

63

No. of Words:

1073741824 words

No. of Words Code:

1G

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1GX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA63,10X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Page Size (words):

4K

Parallel or Serial:

PARALLEL

Power Supplies (V):

3/3.3

Qualification:

Not Qualified

Ready or Busy:

YES

Maximum Seated Height:

1 mm

Sector Size (Words):

256K

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

35 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Toggle Bit:

NO

Type:

SLC NAND TYPE

Width:

9 mm

Trade Compliance

MT29F8G08ABACAH4:C Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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