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RECTANGULAR Flash Memory 1,448

Flash Memory
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Type Width Maximum Write Cycle Time (tWC) Write Protection
MT29F4G08ABADAWP-AATX:DTR by Micron Technology

MT29F4G08ABADAWP-AATX:DTR

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Programming Voltage (V): 3.3;

R-PDSO-G48

18.4 mm

4294967296 bit

FLASH

8

1

48

536870912 words

512M

ASYNCHRONOUS

105 Cel

-40 Cel

512MX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

3.3

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

SLC NAND TYPE

12 mm

IS25LQ010B-JNLE-TR by Integrated Silicon Solution

IS25LQ010B-JNLE-TR

Integrated Silicon Solution

IS25LQ010B-JNLE-TR by Integrated Silicon Solution is a 128KX8 Flash Memory with 104 MHz clock frequency, operating at -40 to 105 °C. Ideal for industrial applications, it features a serial interface, 1.27 mm terminal pitch, and 1048576 bit memory density.

1

104 MHz

R-PDSO-G8

e3

4.9 mm

1048576 bit

FLASH

8

1

1

8

131072 words

128K

SYNCHRONOUS

105 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3

1.75 mm

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

TIN

GULL WING

1.27 mm

DUAL

30

3.9 mm

PC28F128P33BF60A by Micron Technology

PC28F128P33BF60A

Micron Technology

Micron Technology's PC28F128P33BF60A is a 8MX16 NOR flash memory with 64 terminals. Operating at 3V, it offers 134217728 bits of memory density and supports synchronous mode. With a temperature range of -40 to 85°C, it is ideal for industrial applications requiring fast access times and low standby current.

60 ns

BOTTOM

YES

YES

NO

R-PBGA-B64

e1

10 mm

134217728 bit

FLASH

16

1

4,127

64

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TBGA

BGA64,8X8,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

8

PARALLEL

260

2.5/3.3

3

Not Qualified

1.2 mm

16K,64K

.002 Amp

Flash Memories

28 mA

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

NO

NOR TYPE

8 mm

MT25QL128ABB8E12-0AUT by Micron Technology

MT25QL128ABB8E12-0AUT

Micron Technology

Micron Technology's MT25QL128ABB8E12-0AUT is a 16MX8 flash memory with 133 MHz clock frequency, suitable for automotive applications. Operating at 3V, it offers 16777216 words of memory with a density of 134217728 bits. The package style is grid array, thin profile, making it ideal for space-constrained designs.

1

133 MHz

R-PBGA-B24

8 mm

134217728 bit

FLASH

8

1

24

16777216 words

16M

SYNCHRONOUS

125 Cel

-40 Cel

16MX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

NOT SPECIFIED

3

AEC-Q100

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

AUTOMOTIVE

BALL

1 mm

BOTTOM

NOT SPECIFIED

6 mm

IS21ES04G-JCLI-TR by Integrated Silicon Solution

IS21ES04G-JCLI-TR

Integrated Silicon Solution

IS21ES04G-JCLI-TR by Integrated Silicon Solution is a synchronous flash memory with 4GX8 organization, 34359738368 bit memory density, and operates at industrial temperature grade. It features a very thin profile grid array package with 153 terminals and is suitable for applications requiring high-speed data storage in industrial environments.

R-PBGA-B153

13 mm

34359738368 bit

FLASH

8

1

153

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

3.3

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NOT SPECIFIED

11.5 mm

IS21ES08G-JCLI-TR by Integrated Silicon Solution

IS21ES08G-JCLI-TR

Integrated Silicon Solution

IS21ES08G-JCLI-TR by Integrated Silicon Solution is an 8GX8 flash memory with 68719476736 bit density. Operating at 3.3V, it features a very thin profile grid array package and operates in industrial temperature range (-40 to 85 °C). Ideal for applications requiring high-speed synchronous flash memory with parallel interface.

R-PBGA-B153

13 mm

68719476736 bit

FLASH

8

1

153

8589934592 words

8G

SYNCHRONOUS

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

3.3

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NOT SPECIFIED

11.5 mm

IS25LP032D-JMLE-TR by Integrated Silicon Solution

IS25LP032D-JMLE-TR

Integrated Silicon Solution

IS25LP032D-JMLE-TR by Integrated Silicon Solution is a 32Mb Flash Memory with synchronous operation, 133MHz clock frequency, and 3V supply voltage. It is ideal for industrial applications requiring high-speed data storage in a small outline package.

1

133 MHz

R-PDSO-G16

10.31 mm

33554432 bit

FLASH

8

1

16

4194304 words

4M

SYNCHRONOUS

105 Cel

-40 Cel

4MX8

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

SERIAL

NOT SPECIFIED

3

2.65 mm

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

7.49 mm

IS25LP128-JKLE-TR by Integrated Silicon Solution

IS25LP128-JKLE-TR

Integrated Silicon Solution

IS25LP128-JKLE-TR by Integrated Silicon Solution is a 16MX8 flash memory with 133 MHz clock frequency, 3-state output, and 100000 write/erase cycles. It operates in synchronous mode at -40 to 105 °C, suitable for industrial applications requiring high-speed data storage and retrieval.

1

133 MHz

20

100000 Write/Erase Cycles

R-PDSO-N8

6 mm

134217728 bit

FLASH

8

1

8

16777216 words

16M

SYNCHRONOUS

105 Cel

-40 Cel

16MX8

3-STATE

PLASTIC/EPOXY

HVSON

SOLCC8,.2

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

.8 mm

4-WIRE

.000065 Amp

14 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

NO LEAD

1.27 mm

DUAL

5 mm

HARDWARE/SOFTWARE

IS25LP256D-RMLE-TR by Integrated Silicon Solution

IS25LP256D-RMLE-TR

Integrated Silicon Solution

IS25LP256D-RMLE-TR by Integrated Silicon Solution is a 32MX8 Flash Memory with 268Mbit memory density. It operates at 133MHz clock frequency, suitable for industrial applications. With a supply voltage range of 2.3V to 3.6V, it offers synchronous operation in a small outline package for space-constrained designs.

133 MHz

R-PDSO-G16

10.31 mm

268435456 bit

FLASH

8

1

16

33554432 words

32M

SYNCHRONOUS

105 Cel

-40 Cel

32MX8

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

SERIAL

NOT SPECIFIED

3

2.65 mm

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

7.49 mm

IS25LP512M-RMLE-TR by Integrated Silicon Solution

IS25LP512M-RMLE-TR

Integrated Silicon Solution

IS25LP512M-RMLE-TR by Integrated Silicon Solution is a 64MX8 flash memory with 536870912 bit density. It operates at 133 MHz clock frequency, suitable for industrial applications. With a supply voltage range of 2.3V to 3.6V, it offers synchronous operation in a small outline package for space-constrained designs.

1

133 MHz

R-PDSO-G16

10.31 mm

536870912 bit

FLASH

8

1

16

67108864 words

64M

SYNCHRONOUS

105 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

SERIAL

NOT SPECIFIED

3

2.65 mm

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

7.49 mm

IS25LQ025B-JNLE-TR by Integrated Silicon Solution

IS25LQ025B-JNLE-TR

Integrated Silicon Solution

IS25LQ025B-JNLE-TR by Integrated Silicon Solution is a 256Kx1 Flash Memory with synchronous operation at up to 104MHz. It has a small outline package, operates in industrial temperature range (-40°C to 105°C), and supports serial communication. Ideal for applications requiring high-speed data storage in compact electronic devices.

104 MHz

R-PDSO-G8

e3

4.9 mm

262144 bit

FLASH

1

1

8

262144 words

256K

SYNCHRONOUS

105 Cel

-40 Cel

256KX1

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3

1.75 mm

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

TIN

GULL WING

1.27 mm

DUAL

30

3.9 mm

IS25LQ512B-JULE-TR by Integrated Silicon Solution

IS25LQ512B-JULE-TR

Integrated Silicon Solution

IS25LQ512B-JULE-TR by Integrated Silicon Solution is a 512Kx1 Flash Memory with synchronous operation, 104 MHz clock frequency, and serial interface. It operates at temperatures ranging from -40 to 105 °C and has a memory density of 524288 bits. Ideal for industrial applications requiring reliable non-volatile memory storage in compact devices.

104 MHz

R-PDSO-N8

3 mm

524288 bit

FLASH

1

1

8

524288 words

512K

SYNCHRONOUS

105 Cel

-40 Cel

512KX1

PLASTIC/EPOXY

HVSON

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

NOT SPECIFIED

3

.6 mm

3.6 V

2.3 V

3

YES

CMOS

INDUSTRIAL

NO LEAD

.5 mm

DUAL

NOT SPECIFIED

2 mm

IS25WP064A-JLLE-TR by Integrated Silicon Solution

IS25WP064A-JLLE-TR

Integrated Silicon Solution

IS25WP064A-JLLE-TR by Integrated Silicon Solution is an 8MX8 Flash Memory with 67108864 bit memory density. Operating at 133 MHz clock frequency, it has a supply voltage range of 1.65V to 1.95V and temperature grade of INDUSTRIAL. Ideal for applications requiring high-speed data storage in compact devices.

1

133 MHz

R-PDSO-N8

8 mm

67108864 bit

FLASH

8

1

8

8388608 words

8M

SYNCHRONOUS

105 Cel

-40 Cel

8MX8

PLASTIC/EPOXY

HVSON

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

NOT SPECIFIED

1.8

.85 mm

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

NO LEAD

1.27 mm

DUAL

NOT SPECIFIED

6 mm

IS25WP064A-JMLE-TR by Integrated Silicon Solution

IS25WP064A-JMLE-TR

Integrated Silicon Solution

IS25WP064A-JMLE-TR by Integrated Silicon Solution is a 64Mb Flash Memory with 8MX8 organization, operating at 133MHz clock frequency. It has a supply voltage range of 1.65V to 1.95V and is ideal for industrial applications requiring high-speed synchronous operation in small outline packages.

133 MHz

R-PDSO-G16

10.31 mm

67108864 bit

FLASH

8

1

16

8388608 words

8M

SYNCHRONOUS

105 Cel

-40 Cel

8MX8

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

SERIAL

NOT SPECIFIED

1.8

2.65 mm

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

7.49 mm

IS25WP064A-RHLE-TR by Integrated Silicon Solution

IS25WP064A-RHLE-TR

Integrated Silicon Solution

IS25WP064A-RHLE-TR by Integrated Silicon Solution is an 8MX8 Flash Memory with 67108864 bit memory density. It operates at a max clock frequency of 133 MHz and has a package style of GRID ARRAY, THIN PROFILE. Ideal for industrial applications requiring high-speed synchronous operation in a compact form factor.

133 MHz

R-PBGA-B24

8 mm

67108864 bit

FLASH

8

1

24

8388608 words

8M

SYNCHRONOUS

105 Cel

-40 Cel

8MX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

NOT SPECIFIED

1.8

1.2 mm

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

6 mm

IS25WP064A-RMLE-TR by Integrated Silicon Solution

IS25WP064A-RMLE-TR

Integrated Silicon Solution

IS25WP064A-RMLE-TR by Integrated Silicon Solution is a 64Mb Flash Memory with 8MX8 organization, operating at up to 133MHz clock frequency. It has a small outline package style and is suitable for industrial temperature grade applications. With synchronous operation and serial interface, it offers high memory density of 67108864 bits for various embedded systems.

133 MHz

R-PDSO-G16

10.31 mm

67108864 bit

FLASH

8

1

16

8388608 words

8M

SYNCHRONOUS

105 Cel

-40 Cel

8MX8

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

SERIAL

NOT SPECIFIED

1.8

2.65 mm

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

7.49 mm

IS25WP256E-JLLE-TR by Integrated Silicon Solution

IS25WP256E-JLLE-TR

Integrated Silicon Solution

IS25WP256E-JLLE-TR by Integrated Silicon Solution is a synchronous flash memory with 32MX8 organization and 268435456-bit memory density. It operates at a max clock frequency of 166 MHz and has an industrial temperature grade. This flash memory is commonly used in applications that require high-speed data storage and retrieval.

1

166 MHz

R-PDSO-N8

8 mm

268435456 bit

FLASH

8

1

8

33554432 words

32M

SYNCHRONOUS

105 Cel

-40 Cel

32MX8

PLASTIC/EPOXY

HVSON

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

NOT SPECIFIED

1.8

.8 mm

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

NO LEAD

1.27 mm

DUAL

NOT SPECIFIED

6 mm

IS25WP512M-JLLE-TR by Integrated Silicon Solution

IS25WP512M-JLLE-TR

Integrated Silicon Solution

IS25WP512M-JLLE-TR by Integrated Silicon Solution is a 64MX8 Flash Memory with 536870912 bit memory density. Operating at 133 MHz, it has a supply voltage of 1.65V to 1.95V and temperature range of -40°C to 105°C. Ideal for industrial applications requiring high-speed synchronous operation in compact designs.

1

133 MHz

R-PDSO-N8

8 mm

536870912 bit

FLASH

8

1

8

67108864 words

64M

SYNCHRONOUS

105 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

HVSON

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

NOT SPECIFIED

1.8

.8 mm

1.95 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

NO LEAD

1.27 mm

DUAL

NOT SPECIFIED

6 mm

IS37SML01G1-LLI-TR by Integrated Silicon Solution

IS37SML01G1-LLI-TR

Integrated Silicon Solution

IS37SML01G1-LLI-TR by Integrated Silicon Solution is a 128MX8 SLC NAND flash memory with 3.3V programming voltage and 104 MHz clock frequency. Ideal for industrial applications, it operates in synchronous mode with a temperature range of -40 to 85 °C and offers a memory density of 1073741824 bits.

104 MHz

R-PDSO-N8

8 mm

1073741824 bit

FLASH

8

1

8

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

HVSON

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

NOT SPECIFIED

3.3

.85 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

NO LEAD

1.27 mm

DUAL

NOT SPECIFIED

SLC NAND TYPE

6 mm

IS37SML01G1-MLI-TR by Integrated Silicon Solution

IS37SML01G1-MLI-TR

Integrated Silicon Solution

IS37SML01G1-MLI-TR by Integrated Silicon Solution is a 128MX8 SLC NAND flash memory with 3.3V programming voltage and 104 MHz clock frequency. Ideal for industrial applications, it operates in synchronous mode with a temperature range of -40 to 85 °C, featuring a small outline package style for surface mount assembly.

104 MHz

R-PDSO-G16

10.31 mm

1073741824 bit

FLASH

8

1

16

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

SERIAL

NOT SPECIFIED

3.3

2.65 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

SLC NAND TYPE

7.49 mm

MTFC16GAKAEJP-4MIT by Micron Technology

MTFC16GAKAEJP-4MIT

Micron Technology

MTFC16GAKAEJP-4MIT by Micron Technology is a 16GX8 Flash Memory with 17179869184 words capacity. Operating in synchronous mode, it has a memory width of 8 and memory density of 137438953472 bit. Ideal for industrial applications, this very thin profile package offers parallel programming with a terminal pitch of 0.5 mm.

R-PBGA-B153

e1

13 mm

137438953472 bit

FLASH CARD

8

1

153

17179869184 words

16G

SYNCHRONOUS

85 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

2.7

1 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.5 mm

BOTTOM

30

11.5 mm

MTFC32GAKAEJP-4MIT by Micron Technology

MTFC32GAKAEJP-4MIT

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 153; Package Code: VFBGA; Package Shape: RECTANGULAR; Length: 13 mm;

R-PBGA-B153

e1

13 mm

274877906944 bit

FLASH CARD

8

1

153

34359738368 words

32G

SYNCHRONOUS

85 Cel

-40 Cel

32GX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

2.7

1 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.5 mm

BOTTOM

30

11.5 mm

EM04APGD4-BA000-2 by Delkin Devices

EM04APGD4-BA000-2

Delkin Devices

Delkin Devices' EM04APGD4-BA000-2 is a Flash Memory with 4GX8 organization, 34359738368 bit memory density, and operates at 3.3V. Ideal for industrial applications, it features a very thin profile GRID ARRAY package with 153 terminals and can withstand temperatures from -40 to 85 °C.

R-PBGA-B153

13 mm

34359738368 bit

FLASH CARD

8

1

153

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

3.3

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NOT SPECIFIED

11.5 mm

EM04APYD3-BA000-2 by Delkin Devices

EM04APYD3-BA000-2

Delkin Devices

Delkin Devices' EM04APYD3-BA000-2 is a 4GX8 flash memory card with 34359738368 bit memory density. Operating at 3.3V, it features a very thin profile and fine pitch design for industrial applications. With a temperature range of -40 to 85 °C, this rectangular package offers synchronous operation in parallel mode.

R-PBGA-B153

13 mm

34359738368 bit

FLASH CARD

8

1

153

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

3.3

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NOT SPECIFIED

11.5 mm

MTFC8GAMALBH-AIT by Micron Technology

MTFC8GAMALBH-AIT

Micron Technology

MTFC8GAMALBH-AIT by Micron Technology is a NAND flash memory with 8GX8 organization, operating at -40 to 85°C. It features a thin profile package style with 153 terminals and uses parallel programming mode. Ideal for industrial applications requiring high memory density and fast data access.

R-PBGA-B153

e1

13 mm

68719476736 bit

FLASH CARD

8

1

153

8589934592 words

8G

SYNCHRONOUS

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

30

NAND TYPE

11.5 mm

MTFC4GLGDM-AITZ by Micron Technology

MTFC4GLGDM-AITZ

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 153; Package Code: TFBGA; Package Shape: RECTANGULAR; No. of Words Code: 4G;

R-PBGA-B153

13 mm

34359738368 bit

FLASH CARD

8

1

153

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

2.7

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NOT SPECIFIED

11.5 mm

MTFC4GMWDM-3MAIT by Micron Technology

MTFC4GMWDM-3MAIT

Micron Technology

MTFC4GMWDM-3MAIT by Micron Technology is a 4GX8 flash memory with 34359738368 bit density. Operating in synchronous mode, it has a thin profile and fine pitch package style. Ideal for industrial applications, it supports parallel programming with a voltage range of 2.7V to 3.6V.

R-PBGA-B153

13 mm

34359738368 bit

FLASH CARD

8

1

153

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

2.7

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NOT SPECIFIED

11.5 mm

MTFC4GMWDQ-3MAIT by Micron Technology

MTFC4GMWDQ-3MAIT

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: LBGA; Package Shape: RECTANGULAR; No. of Words Code: 4G;

R-PBGA-B100

18 mm

34359738368 bit

FLASH CARD

8

1

100

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

NOT SPECIFIED

2.7

1.4 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

14 mm

MTFC4GLMDQ-AITZ by Micron Technology

MTFC4GLMDQ-AITZ

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: LBGA; Package Shape: RECTANGULAR; Terminal Form: BALL;

52 MHz

R-PBGA-B100

18 mm

34359738368 bit

FLASH CARD

8

1

100

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

OPEN-DRAIN

PLASTIC/EPOXY

LBGA

BGA100,10X17,40

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

NOT SPECIFIED

2.7

1.4 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

MLC NAND TYPE

14 mm

MTFC8GLWDQ-3LAITZ by Micron Technology

MTFC8GLWDQ-3LAITZ

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: LBGA; Package Shape: RECTANGULAR; Terminal Position: BOTTOM;

R-PBGA-B100

e1

18 mm

68719476736 bit

FLASH

8

1

100

8589934592 words

8G

SYNCHRONOUS

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

LBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE

PARALLEL

260

2.7

1.4 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

14 mm

MT29F64G08CFACAWP-Z:C by Micron Technology

MT29F64G08CFACAWP-Z:C

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Terminal Pitch: .5 mm;

R-PDSO-G48

18.4 mm

68719476736 bit

FLASH

8

1

48

8589934592 words

8G

ASYNCHRONOUS

70 Cel

0 Cel

8GX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

GULL WING

.5 mm

DUAL

30

MLC NAND TYPE

12 mm

MT29F32G08CBACAWP-ITZ:C by Micron Technology

MT29F32G08CBACAWP-ITZ:C

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Organization: 4GX8;

R-PDSO-G48

18.4 mm

34359738368 bit

FLASH

8

1

48

4294967296 words

4G

ASYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.5 mm

DUAL

30

MLC NAND TYPE

12 mm

MT29F32G08CBACAWP-Z:C by Micron Technology

MT29F32G08CBACAWP-Z:C

Micron Technology

Micron Technology's MT29F32G08CBACAWP-Z:C is a 3.3V MLC NAND Flash Memory with 4GX8 organization, operating in commercial temperature grade. It features 48 terminals, 0.5mm pitch, and offers 34359738368-bit memory density. Ideal for applications requiring high-speed data storage and retrieval in compact devices.

R-PDSO-G48

18.4 mm

34359738368 bit

FLASH

8

1

48

4294967296 words

4G

ASYNCHRONOUS

70 Cel

0 Cel

4GX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

GULL WING

.5 mm

DUAL

30

MLC NAND TYPE

12 mm

MT29F64G08CFACBWP-12Z:C by Micron Technology

MT29F64G08CFACBWP-12Z:C

Micron Technology

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; Package Style (Meter): SMALL OUTLINE, THIN PROFILE;

R-PDSO-G48

18.4 mm

68719476736 bit

FLASH

8

1

48

8589934592 words

8G

SYNCHRONOUS/ASYNCHRONOUS

70 Cel

0 Cel

8GX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

1.2 mm

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

GULL WING

.5 mm

DUAL

30

MLC NAND TYPE

12 mm

6ES7954-8LE03-0AA0 by Siemens

6ES7954-8LE03-0AA0

Siemens

Siemens 6ES7954-8LE03-0AA0 is a rectangular flash memory chip with 12Mx8 organization, operating at 3.3V. It offers 12582912 words capacity and 100663296 bits density, suitable for asynchronous applications requiring high-speed data storage in surface-mount designs.

R-XUUC-N

100663296 bit

FLASH CARD

8

1

12582912 words

12M

ASYNCHRONOUS

12MX8

UNSPECIFIED

DIE

RECTANGULAR

UNCASED CHIP

NOT SPECIFIED

3.3

3.3

YES

CMOS

NO LEAD

UPPER

NOT SPECIFIED

RPSEMC16DA1 by Panasonic

RPSEMC16DA1

Panasonic

Panasonic RPSEMC16DA1 is a 16GX8 MLC NAND flash memory with 17179869184 words capacity. Operating in industrial temperature range (-40 to 85 °C), it has a low profile, fine pitch grid array package style. Suitable for applications requiring high memory density and reliability, with a supply voltage range of 2.7V to 3.6V.

R-PBGA-B153

13 mm

137438953472 bit

FLASH CARD

8

3

1

153

17179869184 words

16G

ASYNCHRONOUS

85 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

LFBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

2.7

AEC-Q100

1.4 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

MLC NAND TYPE

11.5 mm

SFSD4096N1BW1MT-E-DF-111-STD by Swissbit Ag

SFSD4096N1BW1MT-E-DF-111-STD

Swissbit Ag

Swissbit Ag's SFSD4096N1BW1MT-E-DF-111-STD is a 4GX8 flash memory chip with a memory density of 34.3Gb. It operates at a max clock frequency of 50MHz and has a min operating temperature of -25°C, making it suitable for various applications requiring high-speed data storage.

50 MHz

R-XUUC-N8

15 mm

34359738368 bit

FLASH CARD

8

1

8

4294967296 words

4G

SYNCHRONOUS

85 Cel

-25 Cel

4GX8

UNSPECIFIED

DIE

RECTANGULAR

UNCASED CHIP

SERIAL

NOT SPECIFIED

3.3

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

OTHER

NO LEAD

UPPER

NOT SPECIFIED

11 mm

SFSD4096N1BW1MT-I-DF-111-STD by Swissbit Ag

SFSD4096N1BW1MT-I-DF-111-STD

Swissbit Ag

Swissbit Ag's SFSD4096N1BW1MT-I-DF-111-STD is a 4Gx8 Flash Memory with 34359738368-bit density. Operating at 50MHz clock frequency, it suits industrial applications with -40 to 85°C temp range. This serial memory chip has a compact rectangular shape for surface mount integration.

50 MHz

R-XUUC-N8

15 mm

34359738368 bit

FLASH CARD

8

1

8

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

UNSPECIFIED

DIE

RECTANGULAR

UNCASED CHIP

SERIAL

NOT SPECIFIED

3.3

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

NO LEAD

UPPER

NOT SPECIFIED

11 mm

MT35XL01GBBA1G12-0AAT by Micron Technology

MT35XL01GBBA1G12-0AAT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Length: 8 mm;

133 MHz

R-PBGA-B24

e1

8 mm

1073741824 bit

FLASH

1

1

24

1073741824 words

1G

SYNCHRONOUS

105 Cel

-40 Cel

1GX1

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

3

AEC-Q100

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

6 mm

MT35XL01GBBA2G12-0AAT by Micron Technology

MT35XL01GBBA2G12-0AAT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Package Style (Meter): GRID ARRAY, THIN PROFILE;

133 MHz

R-PBGA-B24

e1

8 mm

1073741824 bit

FLASH

8

1

24

134217728 words

128M

SYNCHRONOUS

105 Cel

-40 Cel

128MX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

3

AEC-Q100

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

6 mm

MT35XL256ABA1G12-0AAT by Micron Technology

MT35XL256ABA1G12-0AAT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; No. of Words: 268435456 words;

133 MHz

R-PBGA-B24

e1

8 mm

268435456 bit

FLASH

1

1

24

268435456 words

256M

SYNCHRONOUS

105 Cel

-40 Cel

256MX1

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

3

AEC-Q100

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

6 mm

MT35XL256ABA2G12-0AAT by Micron Technology

MT35XL256ABA2G12-0AAT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 3;

133 MHz

R-PBGA-B24

e1

8 mm

268435456 bit

FLASH

8

1

24

33554432 words

32M

SYNCHRONOUS

105 Cel

-40 Cel

32MX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

3

AEC-Q100

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

6 mm

MT35XL512ABA1G12-0AAT by Micron Technology

MT35XL512ABA1G12-0AAT

Micron Technology

MT35XL512ABA1G12-0AAT by Micron Technology is a 512M Flash Memory with 536870912 bit density. It operates at 133 MHz clock frequency, has a thin profile grid array package style, and supports synchronous mode. Ideal for industrial applications requiring high memory capacity and reliable performance in harsh environments.

133 MHz

R-PBGA-B24

e1

8 mm

536870912 bit

FLASH

1

1

24

536870912 words

512M

SYNCHRONOUS

105 Cel

-40 Cel

512MX1

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

3

AEC-Q100

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

6 mm

MT35XL512ABA2G12-0AAT by Micron Technology

MT35XL512ABA2G12-0AAT

Micron Technology

FLASH; Temperature Grade: INDUSTRIAL; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; No. of Functions: 1;

133 MHz

R-PBGA-B24

e1

8 mm

536870912 bit

FLASH

8

1

24

67108864 words

64M

SYNCHRONOUS

105 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

3

AEC-Q100

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

6 mm

MT35XU02GCBA2G12-0AUT by Micron Technology

MT35XU02GCBA2G12-0AUT

Micron Technology

Micron Technology's MT35XU02GCBA2G12-0AUT is a 256MX8 flash memory IC with 1.8V supply voltage, operating at up to 200MHz clock frequency. Designed for automotive applications, it features AEC-Q100 screening level and operates in a temperature range of -40°C to 125°C.

200 MHz

R-PBGA-B24

e1

8 mm

2147483648 bit

FLASH

8

1

24

268435456 words

256M

SYNCHRONOUS

125 Cel

-40 Cel

256MX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

AEC-Q100

1.2 mm

2 V

1.7 V

1.8

YES

CMOS

AUTOMOTIVE

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

6 mm

MT35XU256ABA1G12-0AAT by Micron Technology

MT35XU256ABA1G12-0AAT

Micron Technology

Micron Technology's MT35XU256ABA1G12-0AAT is a 256MX1 flash memory with 268M words. Operating at 166MHz, it has a voltage range of 1.7V to 2V and withstands industrial temperatures from -40°C to 105°C. Ideal for applications requiring high-speed synchronous operation in compact devices.

166 MHz

R-PBGA-B24

e1

8 mm

268435456 bit

FLASH

1

1

24

268435456 words

256M

SYNCHRONOUS

105 Cel

-40 Cel

256MX1

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

AEC-Q100

1.2 mm

2 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

6 mm

MT35XU256ABA1G12-0AUT by Micron Technology

MT35XU256ABA1G12-0AUT

Micron Technology

Micron Technology's MT35XU256ABA1G12-0AUT is a 256MX1 flash memory with 268Mbit density. Operating at 166MHz, it has a supply voltage range of 1.7V to 2V and supports automotive applications. With AEC-Q100 screening, this synchronous memory in grid array package offers high performance in harsh environments.

166 MHz

R-PBGA-B24

e1

8 mm

268435456 bit

FLASH

1

1

24

268435456 words

256M

SYNCHRONOUS

125 Cel

-40 Cel

256MX1

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

AEC-Q100

1.2 mm

2 V

1.7 V

1.8

YES

CMOS

AUTOMOTIVE

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

6 mm

MT35XU256ABA2G12-0AUT by Micron Technology

MT35XU256ABA2G12-0AUT

Micron Technology

FLASH; Temperature Grade: AUTOMOTIVE; No. of Terminals: 24; Package Code: TBGA; Package Shape: RECTANGULAR; Maximum Seated Height: 1.2 mm;

200 MHz

R-PBGA-B24

e1

8 mm

268435456 bit

FLASH

8

1

24

33554432 words

32M

SYNCHRONOUS

125 Cel

-40 Cel

32MX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

SERIAL

260

1.8

AEC-Q100

1.2 mm

2 V

1.7 V

1.8

YES

CMOS

AUTOMOTIVE

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

6 mm