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IS25LQ010B-JNLE-TR

Integrated Silicon Solution

IS25LQ010B-JNLE-TR by Integrated Silicon Solution

IS25LQ010B-JNLE-TR by Integrated Silicon Solution is a 128KX8 Flash Memory with 104 MHz clock frequency, operating at -40 to 105 °C. Ideal for industrial applications, it features a serial interface, 1.27 mm terminal pitch, and 1048576 bit memory density.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,983 parts In-Stock

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Nova Conductors

Japan . 99 parts In-Stock

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Corohmni

South Africa . 583 parts In-Stock

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$3.292

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Aztec Data Supply Inc.

USA . 4,713 parts In-Stock

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$5.550

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AZTECH Wire

Italy . 210 parts In-Stock

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$10.899

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QUARKTWIN TECHNOLOGY LTD

USA . 27,128 parts In-Stock

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Metaverse IC Inc.

Canada . 11,950 parts In-Stock

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Authorized Procurement Solutions

USA . 7,000 parts In-Stock

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Lixinc

USA . 5,219 parts In-Stock

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Continental Prestige Electronics

USA . 2,744 parts In-Stock

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Argo Parts USA

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Bastille Electronics

Australia . 300 parts In-Stock

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Overview

Unlock the power of reliable and high-quality flash memory with the IS25LQ010B-JNLE-TR by Integrated Silicon Solution. Designed with precision and expertise, this flash memory device offers seamless performance in various applications. With a focus on durability and efficiency, customers can trust in the value and benefits that this product brings. Say goodbye to data loss and hello to enhanced storage solutions with the IS25LQ010B-JNLE-TR.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the flash memory, making it a reliable choice for long-term use.

Surface Mount: YES

Being surface mountable makes installation easier and more efficient, saving time and effort during assembly.

Package Shape: RECTANGULAR

The rectangular shape allows for easy integration into devices and PCB layouts, optimizing space utilization.

Operating Mode: SYNCHRONOUS

The synchronous operation ensures synchronized communication and data transfer, improving overall performance and efficiency.

Nominal Supply Voltage: 3V

The 3V supply voltage is common and compatible with many systems, offering versatile compatibility.

No. of Terminals: 8

The 8 terminals provide sufficient connectivity options, enabling seamless integration into various applications.

Package Style: SMALL OUTLINE

The small outline package style minimizes footprint, making it ideal for compact devices where space is limited.

Maximum Operating Temperature: 105 °C

With a high maximum operating temperature, this flash memory can withstand tough environmental conditions without any issues.

Organization: 128KX8

The 128Kx8 organization offers a balanced combination of memory capacity and data access speed, suitable for a wide range of applications.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature ensures reliable performance even in extreme cold environments, making it versatile for various applications.

Terminal Finish: TIN

The TIN terminal finish provides excellent conductivity and corrosion resistance, enhancing the reliability and longevity of the flash memory.

Terminal Position: DUAL

The dual terminal position allows for flexibility in mounting and interconnectivity, accommodating different installation requirements.

Maximum Seated Height: 1.75 mm

The low maximum seated height enables the flash memory to be used in slim devices while maintaining a compact design.

Maximum Clock Frequency: 104 MHz

With a high clock frequency, the flash memory can achieve fast data transfer rates, improving overall system performance.

Width: 3.9 mm

The narrow width of the flash memory makes it suitable for applications where space is limited, offering versatility in design options.

Minimum Supply Voltage: 2.3V

The low minimum supply voltage allows for efficient power consumption, extending battery life and reducing energy usage.

Maximum Time At Peak Reflow Temperature: 30s

The short time at peak reflow temperature minimizes the risk of thermal damage during assembly, ensuring product reliability.

Peak Reflow Temperature: 260C

The high peak reflow temperature tolerance makes the flash memory suitable for SMT reflow soldering processes without compromising performance.

Length: 4.9 mm

The compact length of the flash memory facilitates easy installation in devices with limited space, improving design flexibility.

Programming Voltage: 3V

The 3V programming voltage ensures compatibility with standard programming equipment, simplifying the customization and reconfiguration process.

Temperature Grade: INDUSTRIAL

The industrial temperature grade certification indicates that the flash memory can operate reliably in harsh industrial environments without performance degradation.

Technology: CMOS

The CMOS technology offers low power consumption and high noise immunity, contributing to the efficiency and reliability of the flash memory.

Parallel or Serial: SERIAL

The serial data transfer mode allows for easy integration into systems with limited I/O pins, providing a cost-effective and efficient solution.

Terminal Form: GULL WING

The gull wing terminal form ensures secure solder connections and mechanical stability during installation, enhancing the durability of the flash memory.

No. of Words: 131072 words

The large number of words in the flash memory provides ample storage capacity for data-intensive applications, offering versatility for various use cases.

Memory Width: 8

The 8-bit memory width enhances data processing efficiency, enabling fast and accurate read/write operations for improved system performance.

Terminal Pitch: 1.27 mm

The small terminal pitch allows for high-density mounting, enabling the flash memory to be used in compact devices without sacrificing functionality.

No. of Words Code: 128K

The 128K words code offers a standardized format for data organization and management, simplifying data handling and retrieval processes.

Maximum Supply Voltage: 3.6V

The high maximum supply voltage tolerance ensures compatibility with various power sources, increasing the versatility and adaptability of the flash memory.

Memory Density: 1048576 bit

The high memory density provides ample storage capacity for storing large volumes of data, making the flash memory suitable for data-intensive applications.

Memory IC Type: FLASH

Being a flash memory IC type offers non-volatile data storage, allowing data to be retained even when power is lost, ensuring data integrity and reliability.

Technical Specifications

Flash Memory IS25LQ010B-JNLE-TR attributes and parameters. Explore more Flash Memory devices from Integrated Silicon Solution

Specs

Alternate Memory Width:

1

Maximum Clock Frequency (fCLK):

104 MHz

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Length:

4.9 mm

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

8

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

3

Maximum Seated Height:

1.75 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.3 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3.9 mm

Trade Compliance

IS25LQ010B-JNLE-TR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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