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IS25LP512M-RMLE-TR

Integrated Silicon Solution

IS25LP512M-RMLE-TR by Integrated Silicon Solution

IS25LP512M-RMLE-TR by Integrated Silicon Solution is a 64MX8 flash memory with 536870912 bit density. It operates at 133 MHz clock frequency, suitable for industrial applications. With a supply voltage range of 2.3V to 3.6V, it offers synchronous operation in a small outline package for space-constrained designs.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Chip Stock

USA . 15,085 parts In-Stock

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Vyrian

USA . 6,328 parts In-Stock

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Nova Conductors

Japan . 32 parts In-Stock

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Aztec Data Supply Inc.

USA . 126 parts In-Stock

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$3.970

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Corohmni

South Africa . 3 parts In-Stock

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$4.721

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AZTECH Wire

Italy . 868 parts In-Stock

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$5.856

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Advanced Electronics

New Zealand . 350 parts In-Stock

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$8.996

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$8.276

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$7.755

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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Argo Parts USA

USA . 2,761 parts In-Stock

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Continental Prestige Electronics

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Bastille Electronics

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Overview

Unlock the power of reliable and high-quality flash memory with the IS25LP512M-RMLE-TR by Integrated Silicon Solution. As a leading manufacturer in the industry, ISS offers cutting-edge technology that guarantees top-notch performance and durability. Ideal for a wide range of applications, this flash memory provides seamless operation and fast data transfer speeds. Customers can trust in the value and benefits that this product delivers, making it an essential component for any project requiring secure and efficient memory storage.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the memory chip, ensuring a longer lifespan.

Surface Mount: YES

Surface mounting makes it easy to integrate this flash memory chip into electronic devices, reducing assembly time and costs.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for faster data transfer speeds and more efficient performance.

Nominal Supply Voltage / Vsup (V): 3

Operating at a nominal supply voltage of 3V makes this flash memory chip energy-efficient and suitable for various applications.

Maximum Operating Temperature: 105 °C

With a high maximum operating temperature, this flash memory chip can withstand harsh environmental conditions and operate reliably in industrial settings.

Organization: 64MX8

The 64MX8 organization provides a large memory capacity and high data storage capabilities, perfect for devices requiring extensive memory storage.

Maximum Clock Frequency (fCLK): 133 MHz

The high maximum clock frequency ensures fast data processing and efficient performance of the flash memory chip.

Memory Density: 536870912 bit

With a high memory density of 536870912 bits, this flash memory chip offers ample storage capacity for storing large amounts of data.

Technical Specifications

Flash Memory IS25LP512M-RMLE-TR attributes and parameters. Explore more Flash Memory devices from Integrated Silicon Solution

Specs

Alternate Memory Width:

1

Maximum Clock Frequency (fCLK):

133 MHz

JESD-30 Code:

R-PDSO-G16

Length:

10.31 mm

Memory Density:

536870912 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

16

No. of Words:

67108864 words

No. of Words Code:

64M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Programming Voltage (V):

3

Maximum Seated Height:

2.65 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.3 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

7.49 mm

Trade Compliance

IS25LP512M-RMLE-TR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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