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IS25WP256E-JLLE-TR

Integrated Silicon Solution

IS25WP256E-JLLE-TR by Integrated Silicon Solution

IS25WP256E-JLLE-TR by Integrated Silicon Solution is a synchronous flash memory with 32MX8 organization and 268435456-bit memory density. It operates at a max clock frequency of 166 MHz and has an industrial temperature grade. This flash memory is commonly used in applications that require high-speed data storage and retrieval.

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Overview

Discover the cutting-edge IS25WP256E-JLLE-TR by Integrated Silicon Solution! As a leader in flash memory technology, ISS offers top-notch quality and reliability. With its small outline, heat sink profile and synchronous operation mode, this product is perfect for a range of applications. Experience lightning-fast speed with a maximum clock frequency of 166 MHz and a memory density of 268435456 bits. Say goodbye to slow loading times and hello to seamless performance. Trust ISS to deliver the best value, benefits, and advantages that will elevate your product to new heights. Upgrade your technology today with ISS!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This Flash Memory product is housed in a plastic/epoxy package, which offers durability and protection for the internal components. This makes it a reliable choice for various applications.

Surface Mount: YES

With the surface mount feature, this Flash Memory can be easily mounted on circuit boards, allowing for efficient and space-saving integration in electronic devices. Ideal for compact designs.

No. of Functions: 1

This Flash Memory device offers a single function, making it straightforward and focused. It simplifies the implementation process and ensures efficient operation.

Package Shape: RECTANGULAR

The rectangular shape of this Flash Memory package provides a standardized form factor, allowing for compatibility with a wide range of devices. This makes it versatile and easy to integrate into various systems.

Operating Mode: SYNCHRONOUS

The synchronous operating mode of this Flash Memory ensures that data transfers are synchronized with an external clock signal, resulting in efficient and reliable performance. Suitable for applications requiring precise timing.

Nominal Supply Voltage / Vsup (V): 1.8

With a nominal supply voltage of 1.8V, this Flash Memory offers low power consumption, contributing to energy efficiency and longer battery life in portable devices. Ideal for power-conscious applications.

No. of Terminals: 8

This Flash Memory features 8 terminals, providing the necessary connections for data transfer and power supply. This simplicity in terminal count simplifies the design and integration process.

Package Style (Meter): SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

The small outline, heat sink/slug, and very thin profile of this Flash Memory package offer efficient heat dissipation and space-saving characteristics. This makes it suitable for applications with size constraints and thermal considerations.

Alternate Memory Width: 1

With an alternate memory width of 1, this Flash Memory can accommodate different configurations based on memory requirements. This flexibility allows for versatile usage in various applications.

Maximum Operating Temperature: 105 °C

The Flash Memory's maximum operating temperature of 105°C ensures reliable operation even in high-temperature environments. This reliability makes it suitable for industrial and automotive applications.

Organization: 32MX8

The Flash Memory is organized into 32 megabits (32M) with an 8-bit width, allowing for the storage and retrieval of large amounts of data efficiently. This capacity makes it ideal for applications that require significant data storage.

Minimum Operating Temperature: -40 °C

With a minimum operating temperature of -40°C, this Flash Memory can withstand extremely low-temperature environments without compromising performance. Suitable for applications in harsh, cold conditions.

Terminal Position: DUAL

The dual terminal position of this Flash Memory ensures secure and reliable connectivity, preventing accidental disconnections. This enhances the product's durability and reliability, making it suitable for demanding environments.

Maximum Seated Height: 0.8 mm

With a maximum seated height of 0.8mm, this Flash Memory offers a compact form factor, enabling its usage in slim and space-constrained devices. Perfect for designs with limited vertical space.

Maximum Clock Frequency (fCLK): 166 MHz

The Flash Memory's maximum clock frequency of 166 MHz allows for fast data transfer rates, ensuring swift and efficient operation. Ideal for applications that require high-speed performance.

Width: 6 mm

With a width of 6mm, this Flash Memory offers a compact footprint, enabling its integration into small-sized devices. This space efficiency ensures optimal utilization of board space.

Minimum Supply Voltage (Vsup): 1.65 V

The Flash Memory operates with a minimum supply voltage of 1.65V, allowing it to function with lower power sources. This capability enhances its compatibility with a wide range of power systems.

Length: 8 mm

The Flash Memory's length of 8mm provides a balanced form factor, making it suitable for various device sizes and configurations. Offers versatility in accommodating different design requirements.

Programming Voltage (V): 1.8

This Flash Memory requires a programming voltage of 1.8V for efficient programming and updating of data. This capability ensures compatibility and ease of use.

Temperature Grade: INDUSTRIAL

With an industrial temperature grade, this Flash Memory can operate reliably in demanding industrial environments with higher temperature ranges. Suitable for rugged applications.

Technology: CMOS

Built using the complementary metal-oxide-semiconductor (CMOS) technology, this Flash Memory offers low power consumption, high noise immunity, and improved performance. Ideal for efficient and reliable data storage.

Parallel or Serial: SERIAL

This Flash Memory employs a serial interface, enabling sequential data read and write operations. This simplifies the integration and enhances compatibility with a wide range of applications.

Terminal Form: NO LEAD

The no-lead terminal form of this Flash Memory enhances its resistance to physical stress, temperature variations, and provides better electrical performance. Ensures long-lasting and reliable connections.

No. of Words: 33554432 words

With a capacity of 33,554,432 words, this Flash Memory can store a substantial amount of data. Perfect for applications requiring extensive memory storage.

Memory Width: 8

The Flash Memory boasts an 8-bit memory width, enabling it to handle larger data sizes efficiently. This capability makes it suitable for applications that require high-speed data transfer and processing.

Terminal Pitch: 1.27 mm

The Flash Memory's terminal pitch of 1.27mm provides a standardized and reliable connection interface, making it easier to integrate into various circuit designs. Offers compatibility and ease of use.

No. of Words Code: 32M

With a code representing 32 megabits (32M), this Flash Memory indicates its significant storage capacity and capability to handle large amounts of data. Suitable for data-intensive applications.

Maximum Supply Voltage (Vsup): 1.95 V

The Flash Memory's maximum supply voltage of 1.95V ensures compatibility with various power system designs and allows for flexibility in powering the device.

Memory Density: 268435456 bit

With a memory density of 268,435,456 bits, this Flash Memory offers a large storage capacity for extensive data storage. Suitable for applications requiring substantial memory capabilities.

Memory IC Type: FLASH

This Flash Memory utilizes flash memory technology, providing non-volatile storage and allowing data to be retained even without power. Perfect for applications where data integrity and reliable storage are crucial.

Technical Specifications

Flash Memory IS25WP256E-JLLE-TR attributes and parameters. Explore more Flash Memory devices from Integrated Silicon Solution

Specs

Alternate Memory Width:

1

Maximum Clock Frequency (fCLK):

166 MHz

JESD-30 Code:

R-PDSO-N8

Length:

8 mm

Memory Density:

268435456 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

8

No. of Words:

33554432 words

No. of Words Code:

32M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Programming Voltage (V):

1.8

Maximum Seated Height:

.8 mm

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

6 mm

Trade Compliance

IS25WP256E-JLLE-TR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Integrated Silicon Solution

ISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) industrial and medical, (iii) communications/enterprise, and (iv) digital consumer. Our primary products are high speed and low power SRAM and low and medium density DRAM, NOR/NAND Flash, and eMMC products. We target these key markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even during periods of tight manufacturing capacity. Our outsourced manufacturing model is based upon a history of joint technology development relationships with key foundries. We also make strategic equity purchases in selected foundries. We have expanded our presence in important markets by adding to design groups in US, China, Korea and Taiwan, and investing in applications engineering and technical support in closer proximity to end customers. These groups complement our core engineering and product management teams located in our Silicon Valley Headquarters in California. In recent years, the need for sophisticated semiconductor memory has expanded beyond the personal computer market and into the automotive, communications, digital consumer, industrial and medical markets. Increased memory content is required in these products in order to help process large amounts of data.

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